公开(公告)号：WO2007146803B1

公开(公告)日：2008-12-18

申请号：PCT/US2007070758

申请日：2007-06-08

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  DHINDSA RAJINDER

Inventor： FISCHER ANDREAS ,  DHINDSA RAJINDER

IPC: C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

Abstract: Techniques and apparatus for substantially reducing and/or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

Abstract translation: 用于显着减少和/或防止发生等离子体非约束事件的技术和装置，包括屏蔽设置在室部件之间的间隙和沿着具有电介质屏蔽结构的RF电流路径的一个或多个的屏蔽尖锐部件结构 电介质屏蔽结构，并保持相邻的等离子体约束环之间的间隙小于等离子体的最坏情况DeBye长度。

公开(公告)号：WO2007100528A3

公开(公告)日：2008-10-23

申请号：PCT/US2007004224

申请日：2007-02-16

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

Abstract: Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

Abstract translation: 概括地说，本发明通过提供改进的室清洁机构来满足这些需要。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

公开(公告)号：WO2008082518A3

公开(公告)日：2008-08-21

申请号：PCT/US2007025831

申请日：2007-12-19

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  ANTOLIK JERREL K ,  STEVENOT SCOTT

Inventor： DHINDSA RAJINDER ,  ANTOLIK JERREL K ,  STEVENOT SCOTT

IPC: H01L21/3065 ,  H05H1/46

CPC classification number: C23C16/455 ,  C23C16/4417 ,  C23C16/45517 ,  C23C16/45536 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/3299 ,  H01L21/3065

Abstract: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.

Abstract translation: 提供了用于控制在等离子体处理装置中形成的等离子体的流动电导的装置，其包括与下电极相对的上电极，以在其间形成间隙。 下电极适于支撑衬底并耦合到RF电源。 注入到间隙中的过程气体在操作期间被激发成等离子体状态。 该装置包括同心地围绕下电极并具有形成在其中的一组槽的接地环，以及用于控制通过槽的气流的机构。

公开(公告)号：WO2007146803A2

公开(公告)日：2007-12-21

申请号：PCT/US2007070758

申请日：2007-06-08

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  DHINDSA RAJINDER

Inventor： FISCHER ANDREAS ,  DHINDSA RAJINDER

IPC: C23F1/00 ,  C23C16/00

CPC classification number: H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

Abstract: Techniques and apparatus for substantially reducing and/or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

Abstract translation: 用于显着减少和/或防止发生等离子体非约束事件的技术和装置，包括屏蔽设置在室部件之间的间隙和沿着具有电介质屏蔽结构的RF电流路径的一个或多个的屏蔽尖锐部件结构 电介质屏蔽结构，并保持相邻的等离子体约束环之间的间隙小于等离子体的最坏情况DeBye长度。

公开(公告)号：WO2007098071A2

公开(公告)日：2007-08-30

申请号：PCT/US2007004225

申请日：2007-02-16

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND

IPC: H01L21/306 ,  C23C16/00 ,  C23F1/00 ,  H01L21/302

CPC classification number: H01L21/67069 ,  C23C16/45521 ,  C23C16/4585 ,  H01J37/3244 ,  H01L21/68735

Abstract: Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In an exemplary embodiment, a plasma processing chamber is provided. The plasma processing chamber includes a substrate support configured to receive a substrate. The plasma processing chamber also includes an annular ring having a plurality of gas channels defined therein. The annular ring is proximate to an outer edge of the substrate support and the annular ring is coupled to the substrate support. The plurality of gas channels is connected to an edge gas plenum surrounding the substrate support. The edge gas plenum is connected to a central gas plenum disposed within and near the center of the substrate support through a plurality of gas supply channels.

Abstract translation: 一般来说，本发明的实施例提供了改进的等离子体处理机构，装置和方法，以增加基板的非常边缘处的工艺均匀性。 在示例性实施例中，提供等离子体处理室。 等离子体处理室包括被配置为接收衬底的衬底支撑件。 等离子体处理室还包括具有限定在其中的多个气体通道的环形环。 环形环靠近衬底支撑件的外边缘并且环形环耦合到衬底支撑件。 多个气体通道连接到围绕衬底支撑件的边缘气体充气室。 边缘气体增压室通过多个气体供应通道连接到设置在基板支撑件的中心内和附近的中心气室。

公开(公告)号：WO0231859A9

公开(公告)日：2003-05-22

申请号：PCT/US0142611

申请日：2001-10-10

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  Y10T156/10

Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

Abstract translation: 一种具有前表面的等离子体放电电极，其中心部分包​​括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。 周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。 在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。 可以改变下部电极上的台阶和相应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

公开(公告)号：WO03015133A2

公开(公告)日：2003-02-20

申请号：PCT/US0224057

申请日：2002-07-31

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  LENZ ERIC

Inventor： DHINDSA RAJINDER ,  LENZ ERIC

IPC: H01L21/3065 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/00

CPC classification number: C23C16/45565 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/3244

Abstract: An electrode assembly of a semiconductor processing chamber wherein heat transfer between a backing plate and a showerhead electrode is improved by an electrostatic clamping arrangement, which includes a compliant material in contact with a surface of the showerhead electrode. The showerhead electrode is removably attached to the backing plate by a mechanical clamping arrangement which engages an outer periphery of the showerhead electrode. The electrostatic clamping arrangement is coextensive with the showerhead electrode to improve thermal conduction between the backing plate and the showerhead electrode.

Abstract translation: 一种半导体处理室的电极组件，其中背板和喷头电极之间的热传递通过静电夹持装置得到改进，该静电夹持装置包括与喷头电极的表面接触的柔性材料。 喷头电极通过与喷头电极的外周接合的机械夹紧装置可移除地附接到背板。 静电夹持装置与喷头电极共同延伸以改善背板和喷头电极之间的热传导。

公开(公告)号：WO0103159A9

公开(公告)日：2002-05-02

申请号：PCT/US0016147

申请日：2000-06-12

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  HAO FANGLI ,  LENZ ERIC

Inventor： DHINDSA RAJINDER ,  HAO FANGLI ,  LENZ ERIC

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/302

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  H01J37/3244

Abstract: A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate (20) and a showerhead (22) which are secured together to define a gas distribution chamber (24) therebetween. A baffle assembly (26) including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply (40) supplying process gas to a central portion (42) of the baffle chamber and a second gas supply (44) supplying a second process gas to a peripheral region (46) of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply.

Abstract translation: 一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。 气体分配系统包括固定在一起以在其间限定气体分配室（24）的支撑板（20）和喷头（22）。 包括一个或多个挡板的挡板组件（26）位于气体分配室内。 所述挡板装置包括向所述挡板室的中心部分（42）供应处理气体的第一气体供应源（40）和向所述挡板室的周边区域（46）供应第二处理气体的第二气体供应源（44）。 因为在靠近第一和第二气体供应出口的位置处的气体的压力较大，所以可以使喷头背面的气体压力比单个气体供应的情况更均匀。

公开(公告)号：WO2013081844A3

公开(公告)日：2015-06-25

申请号：PCT/US2012065214

申请日：2012-11-15

Applicant: LAM RES CORP ,  DE LA LLERA ANTHONY ,  KELLOG MICHAEL C ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER

Inventor： DE LA LLERA ANTHONY ,  KELLOG MICHAEL C ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER

IPC: C23F1/00 ,  H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/32577

Abstract: A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.

Abstract translation: 一种具有至少一个等离子体处理室的等离子体处理系统，包括可移动接地部件，RF接触部件，其被配置为当RF源向RF接触部件提供RF能量时从RF源接收RF能量;以及接地部件 加上地面。 等离子体处理系统还包括可操作地耦合到可移动接地部件的致动器，用于将可移动接地部件设置在第一位置和第二位置。 第一位置表示可移动接地部件不与RF接触部件和接地部件中的至少一个接触的位置。 第二位置表示可移动接地部件与RF接触部件和接地部件接触的位置。

公开(公告)号：WO2012018448A3

公开(公告)日：2012-04-05

申请号：PCT/US2011041522

申请日：2011-06-22

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

Inventor： DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/31

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

Abstract translation: 电极暴露于等离子体产生体积并且被限定为将射频功率传输至等离子体产生体积，并且包括用于保持暴露于等离子体产生体积的基板的上表面。 气体分配单元设置在等离子体产生容积上方并且与电极基本平行地定向。 气体分配单元包括用于将等离子体处理气体的输入流在基本上垂直于电极的上表面的方向上引导到等离子体产生体积中的气体供给端口的布置。 气体分配单元还包括通孔布置，每个通孔延伸穿过气体分配单元以将等离子体生成体积流体连接到排气区域。 通孔中的每一个引导来自等离子体产生体积的排气流在基本上垂直于电极上表面的方向上。