公开(公告)号：JP2005011566A

公开(公告)日：2005-01-13

申请号：JP2003172028

申请日：2003-06-17

Applicant: Matsushita Electric Works Ltd ,  Tokyo Electron Ltd ,  東京エレクトロン株式会社 ,  松下電工株式会社

Inventor： YAGI YASUSHI ,  TAKAHASHI NAOTO ,  WATABE YOSHIFUMI ,  KOMODA TAKUYA ,  AIZAWA KOICHI

IPC: C25D17/00 ,  C25D21/00 ,  C25D21/12 ,  H01J1/312 ,  H01J9/02

Abstract: PROBLEM TO BE SOLVED: To control the level of oxidation in higher precision at the positive electrode oxidation device applying electrochemical oxidation treatment on an object to be treated an oxidation layer and the manufacturing method of the oxide layer using the above, and at a field emission type electron source formed by the positive electrode oxidation and manufacturing method of the same. SOLUTION: In addition to a DC source capable of flowing a DC from a contact member to a cathode electrode, an AC source capable of flowing AC from the contact member to the cathode electrode, and a control part for controlling the DC source and the AC source are provided in the positive electrode oxidation device. The control part controls the AC source, and detects the resistance of treatment liquid by the current driving and flowing between the contact member and the cathode electrode, and generated voltage. When controlling and driving the DC source, the control part is operated until the generated voltage between the contact member and the cathode electrode after deducting the voltage drop portion in the treatment liquid calculated from the detected resistance of treatment liquid, is increased up to a voltage value set in advance. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了在对被处理物体进行电化学氧化处理的正极氧化装置的氧化层上使用上述的氧化物层的制造方法和在上述的氧化物层的制造方法中更高精度地控制氧化水平 由其正极氧化及其制造方法形成的场发射型电子源。 解决方案：除了能够将DC从接触构件流到阴极的DC源，能够将AC从接触构件流到阴极的AC源以及用于控制DC源的控制部 并且AC源设置在正极氧化装置中。 控制部分控制交流电源，并通过电流驱动和接触部件与阴极电极之间的流动来检测处理液的电阻，产生电压。 当控制和驱动DC源时，控制部分被操作，直到在从处理液的检测电阻计算的处理液中扣除处理液中的电压降部分之后，接触部件和阴极之间产生的电压增加到电压 价值预先设定。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004234912A

公开(公告)日：2004-08-19

申请号：JP2003019463

申请日：2003-01-28

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： TAKEGAWA YOSHIYUKI ,  AIZAWA KOICHI ,  KOMODA TAKUYA

IPC: H01J9/42

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a display panel capable of reducing the cost, as against a conventional manufacturing method of the display panel where initial defects due to electron source elements occur frequently to deteriorate the yield of the display panel and production efficiency is low.
SOLUTION: The method comprises an electron source manufacturing process S1 for manufacturing an electron source having a number of electron source elements and a wiring at one surface side of a rear plate, a phosphor plate manufacturing process S2 for forming an anode electrode, a phosphor material and blackstripes on a face plate, and an assembly sealing process S4 for integrating and vacuum sealing the rear plate and the face plate with a frame interposed in between, preceded by a burn-in test process S3 for carrying out a burn-in test of giving accelerating stress on the electron source elements to remove defective products.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003331719A

公开(公告)日：2003-11-21

申请号：JP2002132352

申请日：2002-05-08

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： HATAI TAKASHI ,  WATABE YOSHIFUMI ,  AIZAWA KOICHI ,  KOMODA TAKUYA

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission electron source in which the stability with the passage of time of the emission current and electron emission efficiency can be improved compared with the conventional art. SOLUTION: This is a manufacturing method of a field emission electron source 10 in which an intense-field drift layer 6 is interposed between a lower electrode 2 and an upper electrode 7. The intense-field drift layer 6 is formed by carrying out a cleaning process after an oxidation process that oxidizes a compound nano-crystal layer 4 containing polycrystalline silicon grains and a great number of silicon crystallites is carried out. In the cleaning process, after the cleaning process of removing the residual impurities in the oxidized compound nano-crystal layer using an acid solution, a water rinsing process is carried out. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种场发射电子源的制造方法，其中与现有技术相比，可以提高发射电流的时间的稳定性和电子发射效率。 解决方案：这是一种场致发射电子源10的制造方法，其中强电场漂移层6插在下电极2和上电极7之间。强场漂移层6通过携带 在氧化含有多晶硅晶粒和大量硅微晶的复合纳米晶层4的氧化工艺之后，进行清洗处理。 在清洗过程中，在使用酸溶液除去氧化的化合物纳米晶层中的残留杂质的清洗处理之后，进行水洗处理。 版权所有（C）2004，JPO

公开(公告)号：JP2003281993A

公开(公告)日：2003-10-03

申请号：JP2002083928

申请日：2002-03-25

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： TAKEGAWA YOSHIYUKI ,  AIZAWA KOICHI ,  KOMODA TAKUYA ,  KUNUGIBARA TSUTOMU

IPC: H01J9/02 ,  H01J1/312

Abstract: PROBLEM TO BE SOLVED: To provide an electron source together with its manufacturing method to improve a heat resistance while a degradation in electron release characteristic is suppressed. SOLUTION: Related to an electron source 10, a lower electrode 2 is formed on one surface side of a substrate 1, a polycrystal silicon layer 3 of non-dope is formed on the lower electrode 2 as a semiconductor layer. A electron passing layer 6 is formed on the polycrystal layer 3, and a surface electrode 7 is formed on the electron passing layer 6. The surface electrode 7 comprises a conductive nitride layer 7a laminated on the electron passing layer 6 and a metal layer 7b laminated on the conductive nitride layer 7a. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供电子源及其制造方法以提高耐热性，同时抑制电子释放特性的降低。 解决方案：与电子源10相关，在基板1的一个表面侧形成下电极2，在作为半导体层的下电极2上形成非掺杂多晶硅层3。 在多晶层3上形成电子通过层6，在电子通过层6上形成表面电极7.表面电极7包括层叠在电子通过层6上的导电氮化物层7a和层叠的金属层7b 在导电氮化物层7a上。 版权所有（C）2004，JPO

公开(公告)号：JP2003197097A

公开(公告)日：2003-07-11

申请号：JP2001392701

申请日：2001-12-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KUNUGIBARA TSUTOMU ,  KOMODA TAKUYA ,  BABA TORU

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a field emission electron source capable of increasing the stability of electron emission characteristics with elapse of time and reducing a production cost. SOLUTION: A porous polycrystal silicon layer 4 having a large number of silicon fine crystals provided between the grains of polycrystal silicon is formed by making porous the polycrystal silicon layer 3 on a lower electrode 12 formed of an n-silicon substrate 1 and an ohmic electrode 2 by anodizing. In an insulation film forming process, an insulation film is formed on the surfaces of grains and silicon fine crystals to form a strong field drift layer 6. Next, a surface electrode 7 is formed on the strong field drift layer 6. In the insulation film forming process, oxidized film is formed on the surfaces of the grains and silicon fine crystals by a rapid thermal oxidation method, and the film quality of the oxidized film is improved by a rapid thermal nitriding method. In the rapid thermal oxidation method and the rapid thermal nitriding method, a heat treatment time is shortened to such a degree that the occurrence of damage to the silicon fine crystals can be suppressed. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003187688A

公开(公告)日：2003-07-04

申请号：JP2001380355

申请日：2001-12-13

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TAKEGAWA YOSHIYUKI ,  AIZAWA KOICHI ,  KOMODA TAKUYA ,  HONDA YOSHIAKI ,  WATABE YOSHIFUMI ,  HATAI TAKASHI ,  KUNUGIBARA TSUTOMU ,  BABA TORU

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/312

Abstract: PROBLEM TO BE SOLVED: To provide a field emission type electron source having improved heat resistant property while restraining the lowering of electron emission property, and to provide a manufacturing method of the same. SOLUTION: The field emission type electron source 10 comprises a lower electrode 2 formed on one surface side of a substrate, a non-doped polycrystalline silicon layer 3 formed on the lower electrode 2 as a semiconductor layer, a strong electric field drift layer 6 composed of oxidized porous silicon polycrystalline layer formed on the polycrystalline silicon layer 3 as an electron passing layer, and a surface electrode 7 formed on the strong electric field drift layer 6. The surface electrode 7 is composed of a conductive carbide layer 7a laminated on the strong electric field drift layer 6 and a noble metal layer 7b laminated on the conductive carbide layer 7a. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003133309A

公开(公告)日：2003-05-09

申请号：JP2001329908

申请日：2001-10-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KUNUGIBARA TSUTOMU ,  KOMODA TAKUYA ,  AIZAWA KOICHI ,  HONDA YOSHIAKI ,  WATABE YOSHIFUMI ,  HATAI TAKASHI ,  TAKEGAWA YOSHIYUKI ,  BABA TORU

IPC: H01J1/312 ,  H01J9/02 ,  H01L21/316 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method by which a thin insulating film having a higher breakdown voltage than the conventional thin insulating film has can be formed. SOLUTION: After a thin insulating film (silicon oxide film), which serves as a base, is formed on the surface of a silicon crystal through an electrochemical method, a desired thin insulating film (silicon oxide film) is obtained by performing a heat-treating step in the temperature profile shown in Fig. 1. In order to obtain the desired thin insulating film, first heat treatment is conducted at a first set temperature T1 and a temperature increase rate both of which are set so that the moisture contained in the thin insulating film is removed, without bumping and second heat treatment is performed at a second set temperature T2, which is set higher than the first set temperature T1, so that structure relaxation may occur in the thin insulating film in the heat- treating step, as shown in Fig. 1.

公开(公告)号：JP2003086093A

公开(公告)日：2003-03-20

申请号：JP2002122330

申请日：2002-04-24

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： HONDA YOSHIAKI ,  AIZAWA KOICHI ,  KOMODA TAKUYA ,  KUNUGIBARA TSUTOMU ,  WATABE YOSHIFUMI ,  HATAI TAKASHI ,  BABA TORU

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing for a field emission type electron source with low cost, high electron emission efficiency, and high reliability. SOLUTION: A polycrystal silicone layer 3 which is a layered semiconductor made of polycrystal silicon is formed on a conductive layer 12 constituting a part of a conductive substrate, and the polycrystal silicon layer 3 is annealed in inert gas. The annealed polycrystal silicon layer 3' constitutes the polycrystal semiconductor layer, a part of the polycrystal layer 3' is made porous by anodic oxidation to form the polycrystal silicon layer 4. After that, the porous polycrystal silicon layer 4 is electrochemically oxidized to form a strong field drift layer 6. Then, a surface electrode 7 is formed on the strong field drift layer 6.

公开(公告)号：JP2002343239A

公开(公告)日：2002-11-29

申请号：JP2001145526

申请日：2001-05-15

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： HONDA YOSHIAKI ,  AIZAWA KOICHI ,  KOMODA TAKUYA ,  KUNUGIBARA TSUTOMU ,  WATABE YOSHIFUMI ,  HATAI TAKASHI

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing for a field emission type elec tron source capable of improving reliability and an electron emission characteris tic. SOLUTION: A porous polycrystalline silicon layer 4 is formed, by forming a polycrystalline silicon layer 3 which is a lamellar semiconductor layer comprising polycrystalline silicon on a conductive layer 12 composing a part of a conductive substrate and then providing pores on a part of the polycrystalline silicon layer 3 by anodizing. A strong field drift layer 6' is formed by electrochemically oxidizing the porous polycrystalline silicon layer 4. A defect in the strong field drift layer 6' is passivated, by applying a hydrogen radical on a surface of the strong field drift layer 6'. A surface electrode 7 is formed on a strong field drift layer 6, after irradiation of hydrogen radicals.

公开(公告)号：JP2002343230A

公开(公告)日：2002-11-29

申请号：JP2001145527

申请日：2001-05-15

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： HONDA YOSHIAKI ,  AIZAWA KOICHI ,  KOMODA TAKUYA ,  KUNUGIBARA TSUTOMU ,  WATABE YOSHIFUMI ,  HATAI TAKASHI

IPC: H01J1/312

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable field emission type electron source which can be used as an electron source for display. SOLUTION: The field emission type electron source is provided with a plurality of wirings 12a aligned on one surface of an insulation substrate 11 used as a substrate, a strong electric field drift layer 6 having a plurality of drift parts 6a formed so as to overlap the wirings 12a, a plurality of surface electrodes 7 respectively facing the wirings 12a via each drift part 6a, and a plurality of bus electrodes 25, connected in common the plurality of surface electrodes 7 which is aligned in the direction intersecting the wirings 12a on the strong electric field drift layer 6 per row. Narrow parts 8a comprising a conductive material narrowing current paths between surface electrodes 7 and bus electrodes 25 are interposed between the surface electrodes 7 and the bus electrodes 25. The narrow parts 8a will break, when an overcurrent flows. The narrow parts 8a constitutes overcurrent protecting elements, which is interposed between the surface electrodes 7 and the bus electrodes 25 and which limits the current flowing in the surface electrodes 7.