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公开(公告)号：JP2003270263A
公开(公告)日：2003-09-25
申请号：JP2002075901
申请日：2002-03-19
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： YAMAMOTO MASAHIRO , TAKAKURA NOBUYUKI , YASUIKE NORIYUKI , YASUDA MASAHARU
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor improving a temperature characteristic by mitigating effect of thermal stress caused by a difference in linear expansion coefficient to a sensor chip. SOLUTION: The semiconductor acceleration sensor comprises the sensor chip 1 consisting of a thin beam 12 having a piezoresistive element 15 projecting inward of a frame consisting of a semiconductor substrate and a plummet 14 supported by hanging with the beam 12, and an upper and a lower stoppers 2 and 3 fixed to the frame 11 with a specific gap to the surface of the sensor chip 1 by way of a support 4. The support 4 is joined to a part other than 4 corners of the frame 11, and the angle of the acceleration sensor center to the neighboring support 4 is 90°. COPYRIGHT: (C)2003,JPO
Abstract translation: 要解决的问题：提供一种半导体加速度传感器，其通过减轻由于与传感器芯片的线膨胀系数的差异引起的热应力的影响来改善温度特性。 解决方案：半导体加速度传感器包括传感器芯片1，该传感器芯片1由具有从由半导体衬底构成的框架的内侧突出的压阻元件15的薄梁12和与梁12悬挂支撑的对着头14组成。 以及通过支撑件4固定到具有与传感器芯片1的表面相对的特定间隙的框架11的下止动器2和3。支撑件4接合到框架11的4个角以外的部分，并且 加速度传感器中心与相邻支架4的角度为90°。 版权所有（C）2003，JPO
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公开(公告)号：JP2003156422A
公开(公告)日：2003-05-30
申请号：JP2001357083
申请日：2001-11-22
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AOKI AKIRA , KENO TAKUJI , TAKAKURA NOBUYUKI , YASUIKE NORIYUKI , YASUDA MASAHARU , YAMAMOTO MASAHIRO
Abstract: PROBLEM TO BE SOLVED: To provide an impact resistance test device that can efficiently execute a test. SOLUTION: Impact resistance of a wafer 5 with a chip for an inertia sensor formed is tested in this impact resistance testing device. The impact resistance testing device is provided with an erected support shaft 11, a support base 10 for supporting the support shaft 11, an arm 1 with a mainstay side supported rotatably in a tip of the support shaft 11, a testing head 2 provided in a tip side of the arm 1 and having a wafer hold for holding the wafer 5, and a collided face 3 with which the testing head 2 is collided by bringing the arm 1 into pendulum motion.
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43.发明专利
公开(公告)号：JP2002340530A
公开(公告)日：2002-11-27
申请号：JP2001144053
申请日：2001-05-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUIKE NORIYUKI , TAKAKURA NOBUYUKI , YASUDA MASAHARU
Abstract: PROBLEM TO BE SOLVED: To provide a method for measuring the gap of a semiconductor microdevice in a non-destructive manner, and the semiconductor microdevice for measuring the gap. SOLUTION: A laser beam 5a is used to provide a measuring hole 3a, capable of permitting the laser beam 5a to pass to the glass substrate 1a of the semiconductor microdevice, wherein the glass substrate 1a is laminated on a silicon substrate 2, so as to make the laser beam 5a incident on the semiconductor microdevice from the glass substrate 1a; the laser beam 5a is passed through the surface of the silicon substrate 2 from the measuring hole 3a to match the focus of the laser beam 5 with the surface of the silicon substrate 2 for measuring the distance L1 from a laser beam source; and the focus of the laser beam 5 is made to coincide with the surface 1af of the glass substrate 1a and measure the distance L2 from the laser beam is measured, and the difference L1-L2 between both distances is calculated as a gap g1.
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公开(公告)号：JP2002228420A
公开(公告)日：2002-08-14
申请号：JP2001024925
申请日：2001-01-31
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TAKAKURA NOBUYUKI , YASUIKE NORIYUKI , YASUDA MASAHARU
Abstract: PROBLEM TO BE SOLVED: To measure the film thickness of a silicon thin film nondestructively even in a state that the silicon thin film is a finished product. SOLUTION: In the method for measuring the film thickness of the silicon thin film 1b, the film thickness of the film 1b on a semiconductor element 10 having the film 1b is measured. Infrared rays at a wavelength of 0.9 μm or more are irradiated toward the surface of the film 1b, and the film thickness of the film 1b is measured on the basis of the interference effect of reflected light L2 by the surface of the film 1b with reflected light L3 by the rear of the film 1b.
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公开(公告)号：JP2001049470A
公开(公告)日：2001-02-20
申请号：JP23080199
申请日：1999-08-17
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： NAKAMURA KOSUKE , SAWADA KOJI , TAGUCHI NORIYUKI , YASUDA MASAHARU , YAMAZAKI KEIICHI , KITAYAMA KAZUYA , NAKAZONO YOSHIYUKI
IPC: H05H1/24 , C23C16/513 , C23F4/00 , C23G5/00
Abstract: PROBLEM TO BE SOLVED: To reduce the thermal damage of the object to be treated by providing a cooling means for cooling the object to be treated in the process of plasma treatment. SOLUTION: A cooling means 50 is formed of a work stand 51 formed of a circular pipe with approximately circular cross-sections such as a stainless steel pipe and a refrigerant flowing through a flow passage 61 at the inside of the work stand 51. The work stand 51 is arranged long approximately horizontally on the lower side of a blow-off port 21 of a plasma treating device A, the approximately half part on the upper side of the outer face of the work stand 51 is formed as a contact part 52 for being brought into contact with the lower face of the object 5 to be treated, and the lower side of the work stand 51 is arranged with a ruturn pipe 54 similar to the work stand 51 approximately parallel to the work stand 51. One end of the return pipe 54 is directly connected with one end of the work stand 51, and moreover, the other end of the return pipe 54 is connected with the other end of the work stand 51 via a pump 55. By this pump 55, the refrigerant is flowed and circulated through the flow passages 61 of the work stand 51 and the return pipe 54, the work stand 51 is cooled by the refrigerant, and the object 7 to be treated in contact with the contact part 52 can be cooled.
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Patent Agency Ranking
公开(公告)号：JP2000180282A
公开(公告)日：2000-06-30
申请号：JP35614798
申请日：1998-12-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AKAI SUMIO , SAITO HIROSHI , YASUDA MASAHARU , TAKAKURA NOBUYUKI , KENO TAKUJI
Abstract: PROBLEM TO BE SOLVED: To easily provide a semiconductor pressure sensor at low cost and with excellent temperature characteristic. SOLUTION: In a semiconductor pressure sensor wherein a silicon tip 1 that a diaphragm 6 is formed, a glass seating 2 with a pressure introduction hole 7 and package 5 connected to the glass seating 2 with a soldering 4 through a metallized layer 3, further wherein a pressure is detected by an amount of deflection of the diaphragm 6, in a temperature range of -40 deg.C to 200 deg.C, a thermal expansion coefficient of the silicon tip 1 is that of the glass seating 2 or under, a thermal expansion coefficient of the metallized layer 3 is greater than that of the glass seating 2, a thermal expansion coefficient of the soldering 4 is greater than the metallized layer 3 and a thermal expansion coefficient of the package 5 is smaller than the soldering 4.
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公开(公告)号：JP2000131166A
公开(公告)日：2000-05-12
申请号：JP29872998
申请日：1998-10-20
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAITO HIROSHI , AKAI SUMIO , YASUDA MASAHARU , TAKAKURA NOBUYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor in which the glass base is not cracked when a metal pipe is jointed to the glass base. SOLUTION: A semiconductor pressure sensor chip having a thin diaphragm 1a formed by making a recess is bonded to a base 2 having a through hole 2a for introducing pressure to the diaphragm 1a and soldered with the metal pipe 4 of a package through a metalized layer 8 formed on the opposite side of the base 2 thus obtaining a semiconductor pressure sensor. The through hole 2a of the base 2 is applied, at he corner part of the opening on the metal pipe 4, with a thin film coating 11 of the same material as that of the base 2 from above the metalized layer 8 such that the coating 11 reaches a specified depth on the inner wall of the through hole 2a.
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公开(公告)号：JP2000105159A
公开(公告)日：2000-04-11
申请号：JP27692098
申请日：1998-09-30
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAITO HIROSHI , AKAI SUMIO , YASUDA MASAHARU , TAKAKURA NOBUYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor in which no crack is brought about to a glass pedestal when the glass pedestal is united to a metallic pipe. SOLUTION: A semiconductor pressure sensor chip 1 having a diaphragm 1a formed thin because of forming a recess part is united to a pedestal 2 having a through hole 2a formed for introducing a pressure to the diaphragm 1a. A metalized layer 8 is formed to a face of the pedestal 2 at the opposite side to a unite face to the semiconductor pressure sensor chip. The semiconductor pressure sensor is united by a solder to a metallic pipe 4 of a package via the metalized layer 8. In the sensor, a thin film 11 formed of the same material as the pedestal is formed on a unite face of the metallic pipe 4 to the pedestal 2 and, a metalized layer 8a of the same composition as the metalized layer 8 is formed on the thin film 11. The uniting by the solder is conducted between the metalized layers 8 and 8a.
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公开(公告)号：JPH11133058A
公开(公告)日：1999-05-21
申请号：JP29921597
申请日：1997-10-30
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUDA MASAHARU
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor for inspecting characteristics in both the state that a gravity is applied to a weight and the state that no gravity is applied to the weight. SOLUTION: In an apparatus for inspecting characteristics of a semiconductor acceleration sensor comprising a support 10 for forming an outer periphery, a weight 8 and a beam 11 for connecting the both formed of a semiconductor substrate 1, and a strain detector 2 changing a resistance value according to an acceleration applied to the weight 8 and formed at the beam 11, a recess 13 for filling the weight 8 is formed at a position corresponding to the weight 8 of a wafer stage 12 for carrying the sensor, a cover member 14 for forming in plane an upper surface of the stage 12 to block the recess 13 is provided, and an inspection is executed in the state that the member 14 is engaged with the recess 13 and the state that it is removed.
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公开(公告)号：JPH11133057A
公开(公告)日：1999-05-21
申请号：JP29546297
申请日：1997-10-28
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUDA MASAHARU
IPC: G01P21/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor for inspecting characteristics in the state that no gravity is applied to a weight and a method for inspecting it. SOLUTION: In a semiconductor acceleration sensor comprising a support for forming an outer periphery, a weight 8 and a beam 11 for connecting both of them formed of a semiconductor substrate 1, a strain detector 8 formed at the beam 11 and changing a resistance value according to an acceleration to be applied to the weight 8, and pedestals 6, 9 connected to both side surfaces of the substrate 1, a through hole 12 is provided at a position corresponding to the weight 8 of the pedestal 9 of the rear surface side of the substrate 1, the weight 8 is supported by a support member 13 via the hole 12 or inert gas is sprayed on a lower surface of the weight 8, thereby inspecting in the state that the weight 8 is horizontally held.
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