Abstract:
A high efficiency amplitude/phase modulation amplifier circuit (100) includes a first (102) and a second (106) high efficiency amplifier. These amplifiers (102 and 106) amplify two constant amplitude/phase modulated signals. A combiner (104) combines the output signals from the amplifiers (102 and 106) to produce a combined signal to a load (108). Two shunt elements (202 and 204) are included to prevent the reactive components of the combined signal from reaching the amplifiers (102 and 106). With no reactive components reflected back, the amplifiers (102 and 106) can remain non-linear even though they are used to amplify an amplitude/phase modulated signal which includes Amplitude Modulation (AM) components.
Abstract:
A rechargeable battery (10) comprises at least one cell (7) having a positive and a negative terminal. Switching regulation circuitry (9) coupled to the cell (7) is selectively used for regulating the battery output (28) and for regulating the charging (12) of the battery.
Abstract:
A vector signal processor (80) can include a digital to time converter (DTC), an RF memory (RFM) or an electronically tunable transmission line (ETTL) (82), a mixer, or other phase shifter (70) for receiving an output of the DTC or the ETTL, and a controller for selectively controlling the harmonic processing of the DTC, RFM or the ETTL and the phase processing of the mixer. The vector signal processor can uncouple a relative phase of a fundamental signal with respect to harmonics of the fundamental signal. The vector signal processor uses selective phase processing of the fundamental signal and related harmonic components. In a specific embodiment, the vector signal processor cancels harmonics of the fundamental signal and more specifically can cancel a third harmonic of the fundamental signal.
Abstract:
A DPC (300) includes: a frequency source (310) for generating a clock signal; a delay line (320) for receiving the clock signal and generating phase-shifted clock signals at output taps; a digital control device (330) for generating a control signal; and a windowing and selection circuit for generating the output signal, that includes sequential logic devices (500, 510, 520) and a combining network. A method for use in a DPC includes: receiving (400) a control signal based on a desired output signal that identifies a first output tap on the delay line; based on the control signal, selecting (410) at least two output taps on the delay line for receiving at least two different phase-shifted clock signals; and generating (420) an output signal based on the control signal and the received phase-shifted clock signals that is substantially the desired output signal.
Abstract:
A programmable skew clock signal generator has a frequency generator circuit (104) consistent with the invention produces an output signal F ϕ0 from a reference signal F ref A frequency accumulator (132, 152) is preloaded with a preload value P K1 and receives one reference signal cycle as a clock signal, receives a constant K 1 as an input thereto, with the frequency accumulator (132, 152) having a maximum count K MAX and producing an overflow output. A phase accumulator (136, 156) is preloaded with a preload value P C1 and receives one overflow cycle output from the frequency accumulator (132, 152) as a clock signal and receives a phase offset constant C 1 as an input thereto. The phase accumulator (136, 156) has a maximum count C MAX and produces a phase accumulator (136, 156) output. A delay line (320) is clocked by the reference signal F ref and produces a plurality of delayed reference clock signals at a plurality of tap outputs. A tap selecting circuit (140, 144; 160, 164) receives the phase accumulator output and selects at least one of the tap outputs in response thereto to produce an output F ϕ1 whose phase shift ϕ1 relative to F 0ϕ is a function of P K1 and P C1 .
Abstract:
A delay locked loop circuit (300) has a delay line (304) with coarse adjustment (322) and fine adjustment (360) inputs. The coarse adjustment input (322) provides an overall adjustment of all of the delay elements while the fine adjustment inputs (360) permit adjusting the individual delay value of each delay element. A first multiplexer (330) produces a first selected output while a second multiplexer (334) produces a second selected output. A measurement circuit (334) measures a difference between the first and second outputs. An error calculator (346) receives the output of the measurement circuit and calculates fine adjustment voltages for each of the selected delay elements. A tuning circuit (350) applies the fine adjustment voltages to the fine adjustment inputs.
Abstract:
A feedforward amplifier (150) according to the present invention uses a direct coupling of an amplifier stage (158) with the amplifier's load (R L ). The main amplifier (202) is coupled through a transmission line (210) to the load. This direct coupled amplifier stage (158) is driven by a signal that induces a very low impedance in parallel with the load to the error signal, but appears as an open circuit to the desired signal so that the desired signal from the main amplifier is substantially unaffected.
Abstract:
High quality epitaxial layers of monocrystalline materials (66) can be grown overlying monocrystalline substrates (52) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. Devices(56) may be formed in the silicon wafer prior to growing the high quality epitaxial layers. Then, to achieve the formation of a compliant substrate, an accommodating buffer layer (65) is grown on silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (62) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Compound devices (68) are then formed on the overlying monocrystalline layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Silicon devices and circuits (e.g., CMOS circuits) in the silicon wafer are wired (70) to the compound devices (e.g., MESFETs, HBTs, HEMTs, PHEMTs, etc.), forming an electrical connection therebetween.
Abstract:
A modulated signal, having a varying magnitude signal envelope, is conditioned, such as to facilitate amplification (500). Minimum values are determined values for portions of the signal envelope (520, 530), and a window expansion function applied to scale each portion of the signal envelope having a minimum value below a particular threshold, such that each scaled portion has a new minimum value of at least the particular threshold (535, 540, 550, 555).
Abstract:
Pulsewidth-modulated amplifier (100) includes a controller (102) which provides for a set of compensated signals (114, 158 and 160). The compensated signals are used for driving a speaker (136). Controller (100) includes a storage area for storing distortion characteristics for the amplifier for a predetermined operational frequency range. The compensated drive signals (114, 158 and 160) help compensate for the electrical non-linear distortions that occur in amplifier (100) and thereby help reduce the output distortion of amplifier (100).