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公开(公告)号：JP2000164114A
公开(公告)日：2000-06-16
申请号：JP33542398
申请日：1998-11-26
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PROBLEM TO BE SOLVED: To provide a field emission type cold cathode having a small electrostatic capacity between a gate and a cathode. SOLUTION: A field emission type cold cathode 1 for emitting electron into the vacuum is formed of a board 2 of Si, an insulating layer 3, a gate electrode 4, a second insulating layer 5, a negative electrode layer 6, cavities 7 formed in the insulating layer 3 and the gate electrode 4, and a conical emitter 8 formed in a bottom of the cavities 7. The negative electrode layer 6 is formed on the board 2, and plural emitters 8 are formed on the negative electrode layer 6, and the cold cathode 1, the negative electrode layer 6 and the emitters 8 are electrically connected to each other. An area formed with the emitter 8 is formed into an electron emitting area 9 for emitting the electron, and equally formed with an area formed with the negative electrode layer 6. The insulating layer 3 is formed on the board 2 and the negative electrode layer 6, and insulates between the gate electrode 4 and the board 2 and between the gate electrode 4 and the negative electrode layer 6, and decides a space between the gate electrode 4 and the board 2. The second insulating layer 5 is formed in the board in the peripheral part of the electron emitting area.
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公开(公告)号：JPH10125215A
公开(公告)日：1998-05-15
申请号：JP27611396
申请日：1996-10-18
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PROBLEM TO BE SOLVED: To prevent electrons emitted from a thin film from hitting a gate electrode, to enhance the electron utilization efficiency, and to prevent increase of the power consumption and lowering of the reliability by surrounding an electron emitting layer with the first electrode, forming the second electrode via an insulating layer, forming an electron emitting layer on it to obtain a substrate, and forming the substrate into a spherical simulated structure with a spherical surface or steps. SOLUTION: Single or multiple rectangular recesses 1a are formed on a metal or semiconductor substrate 1, and projections protruded upward from the opening edges of the recesses 1a are used as beam forming electrodes 2. An insulating layer 3 is formed on each beam forming electrode 2, and a gate electrode 4 made of a metal material of a thin film or a thick film is laminated on it. The bottom face of each recess 1a of the substrate 1 is formed into a spherical shape, and an electron emitting layer 5 made of a material having a low work function is formed on the spherical bottom face of the recess 1a. A fine cold cathode 11 is formed with the electron emitting layer 5, beam forming electrode 2, insulating layer 3, and gate electrode 4.
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公开(公告)号：JPH10106430A
公开(公告)日：1998-04-24
申请号：JP25642696
申请日：1996-09-27
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PROBLEM TO BE SOLVED: To provide an electron gun in which electrons emitted from a cold cathode are focused so as to form an electron beam in which current stability is high, current density distribution is little, DC velocity fluctuation is extremely little, and ripple is little, and also provide electron beam application devices such as a microwave tube, and the like in which the electron gun is used as an electron source, an operation is stable, and reliability is high. SOLUTION: A gate electrode 7 of a field emission emitter array (FEA) and a cathode electrode 5 forming an emitter 10 are divided in plural, and pairs are formed of these so as to constitute cathode segments. A common focusing electrode 9 is arranged on the whole gate electrodes. Current emitted from the respective cathode segments is detected, is controlled by a gate electrode voltage so as to be constant, and a DC voltage is applied to the focusing electrode 9. Electron beam application devices such as a microwave tube, a free electron laser, and the like are constructed using an electron gun as an electron source.
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公开(公告)号：JPH09265953A
公开(公告)日：1997-10-07
申请号：JP7369396
申请日：1996-03-28
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PROBLEM TO BE SOLVED: To provide a light emitting device with less uneven brightness and simple structure by spreading the emitting angle of electrons emitted from an electron emitting electrode, and accelerating many electron beams dispersed at wider angle, then irradiating the accelerated electron beams to a phosphor film. SOLUTION: Electrons emitted from a cold cathode 9 are spread in the lateral direction since the speed component parallel to a substrate on which the cold cathode 9 is formed is large. Electron beams 10 passed through a grid 17 are furthermore accelerated with a strong electric field between the grid 17 and a transparent anode 12, strike a phosphor layer 13, and light is emitted from the phosphor layer 13. Electrons are radiated to the phosphor layer 13 region far wider than the electron emitting region of the cold cathode 9, and light is emitted in the wider area. Equipotential surface 20 is formed in the space between the grid 17 and the transparent anode 12 with a grid 18, the direction of electron beams 10 in the periphery part is turned slightly inward, the angle that the electron beams 10 radiate the phosphor layer 13 is brought vertically close to the phosphor layer 13, reflection or radiation of the secondary electrons is prevented, and energy is effectively used in light emission.
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公开(公告)号：JPH08255558A
公开(公告)日：1996-10-01
申请号：JP6088795
申请日：1995-03-20
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PURPOSE: To provide an electron gun having a long service life as well as a microwave tube having a high performance by forming a cold cathode having a spherical electron emission surface, and further forming an electron beam of high current density and small ripple. CONSTITUTION: An electron emission zone formed out of a material having a low work function, or an electron emission zone having a micro cold cathode processed and formed via a focusing ion beam(FIB) passing the center of the radius of curvature of a spherical surface 2 or the neighborhood thereof, is formed on a spherical substrate 1, thereby forming a cold cathode 6. Then, an electron gun is formed out of the cathode 6 and a beam formation electrode 21 at cathode potential or a beam formation electrode at positive or negative potential on the basis of the cathode potential as reference, and an anode 22. Furthermore, a microwave tube is also formed by use of the electron gun.
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Patent Agency Ranking
公开(公告)号：JPH07130281A
公开(公告)日：1995-05-19
申请号：JP27063293
申请日：1993-10-28
Applicant: NEC CORP
Inventor： KURIYAMA TOSHIHIDE , MAKISHIMA HIDEO
Abstract: PURPOSE:To improve the reliability by controlling a current by an active element as well as suppressing the dispersion of electron emission, in an electron emission type cathode device consisting of a plurality of cathodes. CONSTITUTION:A p-type silicon 5 and an n-type silicon 4 are formed on an n+-type silicon 6. A cathode 1 consisting of molybdenum Mo is formed on the n-type silicon 4, and the cathode 1 is surrounded by a gate electrode 2 and an insulating layer 3. The n-type silicon works as the channel part of a junction type of field effect transistor, and the current flowing there is controlled with the voltage given to the p-type silicon 5. Accordingly, the current by the electrons emitted from the cathode 1 is also controlled with the transistor, and by setting the operation in the saturation area of the transistor, the dispersion of the electron emission efficiency of each cathode can be controlled. Moreover, even if some cathodes are broken, the whole never breaks, so the life of the electric field emission type cathode device can be elongated.
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公开(公告)号：JPH06302266A
公开(公告)日：1994-10-28
申请号：JP8582593
申请日：1993-04-13
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO , YAMADA KEIZO , IMURA HIRONORI
Abstract: PURPOSE:To suppress the unevenness of the emission amount at a minimum amount by forming a field emission cold cathode element with an electrode having a sharp tip, an insulating layer, and a control electrode, and forming the periphery of the opening of the control electrode thicker than the parts other than the periphery part. CONSTITUTION:At the periphery of an electrode 2, both an insulator layer 3 and a gate layer 4 are removed, and an opening is formed. A gate electrode 6 is formed of a gate layer 4 and a gate opening periphery 5, and the periphery 5 is formed thicker than the other parts. In a normal operation, a positive voltage of several dozens V is applied to the gate electrode 6 to an emitter 2 at the potential same as a substrate 1. Since the tip of the emitter 2 is formed extremely sharp, and the tip of the emitter 2 and the gate electrode 6 are positioned extremely close, a strong electric field is applied to the tip of the emitter 2, and electrons are emitted from the tip. A minute cold electrode is composed of a single emitter and the opening of the electrode 6 around the emitter, and a single minute cold cathode or a collection of plural minute cold cathodes makes a cold cathode.
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公开(公告)号：JPH06243777A
公开(公告)日：1994-09-02
申请号：JP16393
申请日：1993-01-05
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PURPOSE:To reduce an influence of gate electric potential change between adjacent individual cathode segments by providing a shielding electrode between plural micro-cold cathodes, which consists of an emitter and a gate provided around the emitter, so as to surround the cold cathodes. CONSTITUTION:A shielding electrode 5 is separated from a gate 4 in a groove 6 part of an insulating layer 3 and each of the gates 4 is also separated from each other. The fixed voltage, for example, 100V on the basis of an emitter 2 on a semiconductor base plate 1, is always impressed to the electrode 5. When proper wiring is inserted to the gate 4, and for example, a control voltage varying 0-100V on the basis of the emitter 2 is impressed, a current emitted from the emitter 2 is varied. Even when the distance between adjacent emitters 2 is as extremely snort, as 10mum or less, the electrode 5 between the emitters 2 works as a shield, so that an influence on an emission electron beam orbit due to a change in an adjacent electric field is reduced to the extent that can be ignored.
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公开(公告)号：JPH05325798A
公开(公告)日：1993-12-10
申请号：JP7974392
申请日：1992-04-01
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO , TSUTAKI KUNIO , IMURA HIRONORI
Abstract: PURPOSE:To improve a frequency characteristic by reducing an input capacitance of a vacuumed micro-electronics element and increasing a mutual conductance. CONSTITUTION:A gate 4 is placed on a flat surface slightly lower than an emitter 2 and an anode 5, one end of the gate 4 near the emitter 2 is placed in a position farther from the anode 5 than the tip of the emitter 2, and the other end of the gate 4 shifted toward the anode 5 is placed in a position nearer to the emitter 2 than a middle point between the tip of the emitter 2 and one end of the node 5 shifted toward the emitter 2.
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公开(公告)号：JPS5734639A
公开(公告)日：1982-02-25
申请号：JP11009180
申请日：1980-08-11
Applicant: Nec Corp , Nippon Telegr & Teleph Corp
Inventor： MURAYAMA YOUICHI , SHIMA TADAO , MAKISHIMA HIDEO
CPC classification number: H01J23/48
Abstract: PURPOSE:To facilitate adjustment of transmission factor characteristics by connecting a microwave line to the central conductor of a coaxial terminal with a metal line which contains a coil. CONSTITUTION:An electron gun 2 which generates an electron beam and a strip line 3 are provided in an enclosure 1 and a coaxial input terminal 5 is provided on the upper part of the enclosure 1. Besides, both the coaxial terminal 5 and strip line 3 are connected to a connection line 4 whose full length, coil diameter, pitch, and the number of windings are predetermined. As a result, the location of the line 4 can be shifted using tweezers and the transmission factor characteristics between the coaxial terminals be easily adjusted.
Abstract translation: 目的：为了便于通过将微波线与包含线圈的金属线连接到同轴端子的中心导体来促进透射率特性的调节。 构成：在外壳1中设置有产生电子束和带状线3的电子枪2，并且在外壳1的上部设置有同轴输入端5.另外，同轴端子5和带状线3 连接到其全长，线圈直径，间距和匝数预定的连接线4。 结果，可以使用镊子移动线4的位置，并且容易地调节同轴端子之间的传输因子特性。
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