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公开(公告)号：DE69407927T2
公开(公告)日：1998-08-13
申请号：DE69407927
申请日：1994-10-28
Applicant: NEC CORP
Inventor： KURIYAMA TOSHIHIDE , MAKISHIMA HIDEO
Abstract: It is the object of the invention to provide a field emission cathode apparatus comprising plural electron-emitters which eliminates nonuniformity of electric emission density over an emissive area, controls emission currents by active devices, and improves reliability of the apparatus. A p-type silicon 5 and a n-type silicon 4 are formed on a n -type silicon 6. On n-type silicon 4, an electron-emitter 1 made of Mo is formed, and an electron-emitter 1 is surrounded by a grid electrode 2 and an insulator layer 3. A n-type silicon 4 serves as a channel region of a junction gate field effect transistor, and a current flowing through it is controlled by a voltage applied to a p-type silicon 5. Accordingly, an electron current emitted from an electron-emitter 1 is also controlled by this transistor, and by setting up an operation region of this transistor in a saturation current region, nonuniformity of electron emissions from electron-emitters can be improved. Even when a portion of cathodes are damaged, damages are not magnified to that of a whole apparatus, and a life of a field emission cathode can be prolonged.
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公开(公告)号：DE69407927D1
公开(公告)日：1998-02-19
申请号：DE69407927
申请日：1994-10-28
Applicant: NEC CORP
Inventor： KURIYAMA TOSHIHIDE , MAKISHIMA HIDEO
Abstract: It is the object of the invention to provide a field emission cathode apparatus comprising plural electron-emitters which eliminates nonuniformity of electric emission density over an emissive area, controls emission currents by active devices, and improves reliability of the apparatus. A p-type silicon 5 and a n-type silicon 4 are formed on a n -type silicon 6. On n-type silicon 4, an electron-emitter 1 made of Mo is formed, and an electron-emitter 1 is surrounded by a grid electrode 2 and an insulator layer 3. A n-type silicon 4 serves as a channel region of a junction gate field effect transistor, and a current flowing through it is controlled by a voltage applied to a p-type silicon 5. Accordingly, an electron current emitted from an electron-emitter 1 is also controlled by this transistor, and by setting up an operation region of this transistor in a saturation current region, nonuniformity of electron emissions from electron-emitters can be improved. Even when a portion of cathodes are damaged, damages are not magnified to that of a whole apparatus, and a life of a field emission cathode can be prolonged.
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公开(公告)号：JPH1152278A
公开(公告)日：1999-02-26
申请号：JP20570797
申请日：1997-07-31
Applicant: NEC CORP
Inventor： YAMADA KEIZO , KURIYAMA TOSHIHIDE
Abstract: PROBLEM TO BE SOLVED: To provide an optical scanner which may be driven with low voltage, has a large deflection angle and may be miniaturized. SOLUTION: This optical scanner has a mirror 2 which is supported on a supporting substrate 1 by torsion bars 3a, 3b and is adapted oscillatable in a direction perpendicular to the plane direction of this supporting substrate 1 and stationary electrodes 7a, 7b which are supported at the supporting substrate 1 in both side positions of this mirror. The optical scanner impresses voltage between these stationary electrodes 7a, 7b and an electrode part 5 disposed on the mirror 2 and oscillates the mirror 2 by the electrostatic attraction force generated between both. The stationary electrodes 7a, 7b and the mirror 2 are formed to a plane shape to prevent the overlapping in the oscillation direction of the mirror 2. Since the crossinterference is prevented even by diminishing the spacings between the stationary electrodes 7a, 7b and the mirror electrode part 5, the small-sized optical scanner of the low voltage and large deflection angle is obtd.
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公开(公告)号：JPH1144587A
公开(公告)日：1999-02-16
申请号：JP20182797
申请日：1997-07-28
Applicant: NEC CORP
Inventor： KURIYAMA TOSHIHIDE , SUGA MICHIHISA
Abstract: PROBLEM TO BE SOLVED: To detect fingerprints stably with high sensitivity by shaping a columnar elastic body larger in height than in breadth in section in a source, a drain direction. SOLUTION: In order to measure an output of a tactile sensor transistor with the use of a source follower circuit, a differential output to an output of a source follower circuit of an adjacent MOSFET is measured which has a low output resistance and is little influenced by a characteristic change of a transistor because of a temperature change, thereby negating the influence of the temperature change. As a result, only a change because of unevenness of a fingerprint is taken out. A columnar elastic body 6 constituting a sensor part is formed of, e.g. photosensitive silicone resin in a rectangular cross section. For example, when a distance between a source area 1 and a drain area 4 is 5 μm, the cross section of the columnar elastic body 6 can be selected to have 7 μm breadth and 8 μm height. When a force is applied from above from a rising part of the fingerprint, the columnar elastic body 6 shrinks in a longitudinal direction and at the same time expands in a lateral direction. A deformation in the longitudinal direction can be facilitated, thereby improving sensitivity of a sensor.
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公开(公告)号：JPH08327677A
公开(公告)日：1996-12-13
申请号：JP15230295
申请日：1995-05-26
Applicant: NEC CORP , TOKIN CORP
Inventor： YAMADA KEIZO , OKADA HIROYUKI , KURIYAMA TOSHIHIDE , TSURUGA KIKUO
Abstract: PURPOSE: To obtain a capacity detection circuit in which the ratio of capacity can be detected stably regardless of the ambient temperature by eliminating the effect of offset voltage of amplifier or the charges of a switching transistor. CONSTITUTION: The capacity detection circuit comprises a switched capacitor circuit 15, sample hold circuits 16, 17, a differential amplifier circuit 18, a sensor drive circuit and a logic circuit. The sensor capacitor constituting the feedback capacity of the switched capacitor circuit 15 is discharged immediately before the level of a signal for driving a reference capacitor is changed. Output voltage from the switched capacitor circuit 15 is sampled and held in synchronism with the drive timing of reference capacitor and the difference signal between both signals is taken out. This circuitry eliminates the common mode disturbance, e.g. temperature drift, being mixed in the capacity detection circuit thus realizing a capacity detection circuit excellent in offset and the temperature drift thereof.
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Patent Agency Ranking
公开(公告)号：JPH07130281A
公开(公告)日：1995-05-19
申请号：JP27063293
申请日：1993-10-28
Applicant: NEC CORP
Inventor： KURIYAMA TOSHIHIDE , MAKISHIMA HIDEO
Abstract: PURPOSE:To improve the reliability by controlling a current by an active element as well as suppressing the dispersion of electron emission, in an electron emission type cathode device consisting of a plurality of cathodes. CONSTITUTION:A p-type silicon 5 and an n-type silicon 4 are formed on an n+-type silicon 6. A cathode 1 consisting of molybdenum Mo is formed on the n-type silicon 4, and the cathode 1 is surrounded by a gate electrode 2 and an insulating layer 3. The n-type silicon works as the channel part of a junction type of field effect transistor, and the current flowing there is controlled with the voltage given to the p-type silicon 5. Accordingly, the current by the electrons emitted from the cathode 1 is also controlled with the transistor, and by setting the operation in the saturation area of the transistor, the dispersion of the electron emission efficiency of each cathode can be controlled. Moreover, even if some cathodes are broken, the whole never breaks, so the life of the electric field emission type cathode device can be elongated.
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公开(公告)号：JPH05203883A
公开(公告)日：1993-08-13
申请号：JP31815991
申请日：1991-12-02
Applicant: NEC CORP
Inventor： FUJIWARA MASAHIKO , KURIYAMA TOSHIHIDE
Abstract: PURPOSE:To provide the variable wavelength filter necessary for wavelength multiplex optical communication technology at a low cost by a silicon actuator and the optical waveguides formed on a silicon substrate and formed with mirrors on the end faces. CONSTITUTION:This variable wavelength filter is constituted of the 1st optical waveguide 1, 2nd optical waveguide 2 and 3rd optical waveguide 3 which are disposed successively by having microgaps along the optical axis direction on the silicon substrate and the high reflection films which are formed on one of both end faces of the 2nd optical waveguide 2, the end face of the 1st optical waveguide 1 on the 2nd optical waveguide 2 side and one of the end face of the 3rd optical waveguide 3 on the 2nd optical waveguide 2 side, respectively. The silicon substrate 5 forming the 2nd optical waveguide 2 is movable.
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公开(公告)号：JPH03249557A
公开(公告)日：1991-11-07
申请号：JP4553490
申请日：1990-02-28
Applicant: NEC CORP
Inventor： KURIYAMA TOSHIHIDE
IPC: G01N27/414
Abstract: PURPOSE:To exactly measure a temperature of a solution to be measured, as well by providing a diode provided with an electric conductor through an insulating film on the surface which becomes a temperature sensor in the vicinity of an ion sensitive (IS) FET for measuring a liquid component and connecting the electric conductor to one electrode of the diode. CONSTITUTION:On a sapphire substrate 8, a sensor area 6 formed by an ISFET having a drain electrode 1 and a source electrode 2 is provided, and glucose concentration in a liquid to be measured is measured from a different of outputs of two ISFETs through an oxygen fixing film 14 and an albumin film 15. On the other hand, a diode 7 of p type and n type silicon 11, 9 having an anode electrode 3 and a cathode electrode 4 is provided in the vicinity of these ISFETs, and at least on the surface of a p-n type joint part, an electric conductor 5 connected to one electrode of the diode is provided through an insulator of a silicon oxide film 12, a silicon nitride film 13, etc., and when postential of a connecting electrode is made constant and the electric conductor is brought into contact with a liquid, a liquid temperature is also measured exactly without being influenced by the potential of a liquid and a component variation.
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公开(公告)号：JPH0257238A
公开(公告)日：1990-02-27
申请号：JP20730088
申请日：1988-08-23
Applicant: NEC CORP
Inventor： KURIYAMA TOSHIHIDE
IPC: A61B5/145 , A61B5/1468 , G01N27/416
Abstract: PURPOSE:To measure the concentration of glucose using a very small amount of an exudate and to realize the continuous monitoring of a blood sugar level by mounting an amperometry type glucose sensor composed of an electrode having at least glucose oxidase and a mediator immobilized on the surface thereof in an exudate vacuum suction route. CONSTITUTION:A suction cell 3 having a mesh 2 provided therein is fixed to the surface of the skin 1 from which a keratin layer is removed by a double- coated adhesive tape 8. When the skin 1 is sucked under vacuum of about 400mmHg by a vacuum pump through a pipe 6, an exudate 7 is exuded from the surface of the skin 1. A glucose sensor 4 is arranged in the vicinity of the outlet of the suction cell 3. The suction cell 3 is arranged to the upper arm of an examinee 13 and reduced in pressure by a vacuum pump 9 while pressure is monitored by a pressure gauge 10. The signal of the glucose sensor 4 is measured by a measuring circuit 11 through a lead wire 5 to be recorded on a recorder 12. By this method, the glucose in the exudate low in oxygen concentration can be measured accurately and continuously.
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公开(公告)号：JPH0223629A
公开(公告)日：1990-01-25
申请号：JP17472988
申请日：1988-07-12
Applicant: NEC CORP
Inventor： HAMAGUCHI TSUNEO , KURIYAMA TOSHIHIDE
IPC: H01L21/762 , H01L21/304 , H01L21/76
Abstract: PURPOSE:To shorten the production time, and to polish a semiconductor substrate in uniform thickness by laminating an silicon substrate and a support substrate isolated by a dielectric. CONSTITUTION:An silicon dioxide film region 2 as an annular field insulating film is formed under the surface of an n-type silicon sub strate 1. An silicon dioxide laminated film 3 is shaped onto the surface of the n-type silicon substrate 1, and the surface is flatten ed through polishing. An silicon support substrate 4, to the surface of which hydrophilic treatment is executed and the type of an impurity of which is not specified, is prepared, fast stuck to the n-type silicon substrate 1, and silanol-joined. The rear of the n-type silicon substrate 1 is polished, the silicon dioxide film region 2 is exposed, and an element forming region 1a surrounded by the silicon dioxide film region 2 is shaped. An impurity is introduced to the ground surface of the n-type silicon substrate 1 and p layers 5, 5 in desired depth are formed, and an n layer 7 is shaped to the p layer 6. A gate electrode G is formed onto the p layer 6, all anode electrode A to the p layer 5 and a cathode electrode C onto the n layer 7 respectively.
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