公开(公告)号：JP2000223421A

公开(公告)日：2000-08-11

申请号：JP2138899

申请日：1999-01-29

Applicant: SONY CORP

Inventor： ARAI MICHIO

IPC: H01L21/205 ,  C23C16/24 ,  C23C16/44

Abstract: PROBLEM TO BE SOLVED: To raise all of the adhesion between a created film and a substrate, the density of created films, the rate of creation, and the smoothness of created films, by applying voltage between a catalyst and a counter electrode, thereby forming an accelerating electric field in a region between a material gas supply means and a base substance. SOLUTION: A DC power source 49 is connected between a catalyst 46 and a substrate 1, and DC bias voltage is applied. That is, the atmosphere within the film growth room 44 is ventilated from nitrogen to hydrogen, and it is heated to, for example, 200-800 deg.C, and material gas 40 is introduced, and it is brought into contact with a catalyst 46 such as tungsten or the like heated to, for example, 1650 deg.C. A part of the material gas 40 is decomposed, contacting with the catalyst 46, and forms a group of ion or radical such as silicon or the like having high energy. The accumulated seed 50 of created ion, radical, or the like produces potential gradient by the action of the DC electric field by a DC power source 49 of, for example, 500 V, and it is accelerated to the side of the substrate 1, and is directed, and it grows a specified film such as a polycrystalline silicon or the like in gas phase on the substrate 1.

公开(公告)号：JPH07147689A

公开(公告)日：1995-06-06

申请号：JP31913193

申请日：1993-11-24

Applicant: SONY CORP

Inventor： ARAI MICHIO

IPC: H04N5/92 ,  H04N7/24 ,  H04N13/00 ,  H04N19/00 ,  H04N19/42 ,  H04N19/423 ,  H04N19/46 ,  H04N19/503 ,  H04N19/51 ,  H04N19/597 ,  H04N19/65 ,  H04N19/70 ,  H04N19/89

Abstract: PURPOSE:To easily transmit image data on plural channels via a conventional transmission system of one channel by transmitting the image data to which time base compression is applied in data unit sequentially and circularly. CONSTITUTION:An image processing device 20 inputs the image data to buffer circuits 4L, 4R by converting to video signals S1L, S1R, and outputs them to encoders 5L, 5R at the following stage. The encoders 5L, 5R perform the time compression of the image data in frame unit by reducing data quantity by applying data compression. Also, data is compressed by switching the compressibility of the data so as to set the whole data quantity equal to the one in the case where the image data of one system is inputted. Furthermore, the encoders 5L, 5R set the image data so as to set the data transfer speed of the image data inputted to a parallel-serial conversion circuit 6 equal to the one when the image data of one system is selected by outputting data compressed image data in frame unit alternately by applying time base compression.

公开(公告)号：JPS63170916A

公开(公告)日：1988-07-14

申请号：JP549788

申请日：1988-01-13

Applicant: SONY CORP

Inventor： NISHIYAMA KAZUO ,  YANADA TETSUNOSUKE ,  ARAI MICHIO

IPC: H01L21/26 ,  H01L21/268

Abstract: PURPOSE:To carry out accurate feedback to an infrared lamp beam irradiation means to realize a heating process under a good condition by detecting temperature of semiconductor substrate material with a temperature detecting means provided to a semiconductor substrate material setting part and controlling a control means connected to the infrared lamp beam irradiating means. CONSTITUTION:The ion-implanted region can be activated electrically at high temperature and within a short period by irradiating a semiconductor substrate material 1 into which ions are implanted using an infrared lamp 4 with irradiation of the infrared lamp beam 4 and by heating it, and simultaneously uniformity of sheet resistance in the semiconductor substrate material 1 can also be attained with uniform irradiation of infrared lamp beam 4. Particularly, in case of a boron-implanted region, control of a distribution of implanted regions and formation of a shallow junction can be realized. On the other hand, the heating condition is controlled by detecting heating temperature of semiconductor substrate material 1 by irradiation of infrared lamp beam 4 for the annealing. Thereby, the annealing process can be realized under the good conditions.

公开(公告)号：JPS62219425A

公开(公告)日：1987-09-26

申请号：JP6318286

申请日：1986-03-20

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  ARAI MICHIO

IPC: H01J1/30 ,  H01J1/308

Abstract: PURPOSE:To perform electron emissions in the direction approximately along heterojunction planes by providing an electron traveling layer formed with repeated structures of specific semiconductor layers for suppressing scattering factors in electron traveling and imparting an electric field in the direction approximately along the heterojunction planes formed with the lamination of said specific semi-conductor layers. CONSTITUTION:An electron traveling layer 2 is formed on a substrate 1 and an electron supply layer 5 is formed thereon. In the electron traveling layer 2, superlattice structure semiconductor layers 13 are formed with repeated lamination structures of first compound semiconductor thin film layers 13a with narrow hand gaps and second compound semiconductor thin film layers 13b with wider band gaps in comparison. The thickness of the thin film layer 13a is selected to be (a) in the formula of (a

公开(公告)号：JPS61219133A

公开(公告)日：1986-09-29

申请号：JP6024985

申请日：1985-03-25

Applicant: SONY CORP

Inventor： SUZUKI TOSHIHARU ,  KASAHARA JIRO ,  ARAI MICHIO

IPC: H01L21/26 ,  H01L21/268 ,  H05B39/04

Abstract: PURPOSE:To enable the annealing process to be performed with a good reproducibility, by utilizing an output from an optical detector for controlling the quantity of radiated light. CONSTITUTION:A quantity of light within an annealing furnace 10 is detected by an optical detector 12 through a fiber scope 11, and an electrical signal outputted by the optical detector 12 is fed back to a power supply 9 for lamp light sources 1 and 2. Accordingly, the optical output (the quantity of light irradiation) can be stabilized and the reproducibility of the annealing process can be improved. Further, the temperature of the material can be controlled as required if a given relation has been previously established between the optical outputs of the light sources 1, 2 and a temperature of a material 5. Still further, the speeds of increasing and decreasing the temperature of the material 5 can be controlled by changing the optical outputs from the lamp light sources 1 and 2 with the lapse of time.

公开(公告)号：JPS6174368A

公开(公告)日：1986-04-16

申请号：JP19730384

申请日：1984-09-20

Applicant: Sony Corp

Inventor： DOSEN MASASHI ,  ARAI MICHIO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732 ,  H01L29/735

CPC classification number: H01L29/1008 ,  H01L29/735

Abstract: PURPOSE:To raise the current-amplification factor of a semiconductor device by a method wherein virtual base regions are formed in parts of the semiinsulative semiconductor, where are located between the first and third regions provided concentrically in the semiconductor, according to injection of majority carrier. CONSTITUTION:Virtual base regions 19 are formed in a semiinsulative semiconductor 11, whereby majority carrier, which is injection from a first region 12, reaches a second region 13 through the regions 19 and a bipolar transistor operation is performed. Moreover, as the first and second regions 12 and 13 and a third region 14 are formed in such a way as to encircle the regions 19 concentrically in order, the regions 19 are confined in the element, and the base current and the collector current flow uniformly.

Abstract translation: 目的：通过一种方法来提高半导体器件的电流放大系数，其中虚拟基极区域形成在半绝缘半导体的部分中，位于半导体同心设置的第一和第三区域之间，根据多数载流子的注入 。 构成：虚拟基极区域19形成在半绝缘半导体11中，由此从第一区域12注入的多数载流子通过区域19到达第二区域13，并执行双极晶体管操作。 此外，由于第一区域12和第二区域13以及第三区域14以围绕区域19顺序的方式形成，区域19被限制在元件中，并且基极电流和集电极电流流动 均匀。

公开(公告)号：JPS6159772A

公开(公告)日：1986-03-27

申请号：JP18093284

申请日：1984-08-30

Applicant: Sony Corp

Inventor： DOSEN MASASHI ,  ARAI MICHIO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/735

CPC classification number: H01L29/735 ,  H01L29/1008

Abstract: PURPOSE:To obtain a device, even in a lateral structure, which assures large current amplification coefficient, high speed operations and stable and uniform characteristics by forming a current path by injected carrier to the half-insulated region outside the region having high impurity concentration. CONSTITUTION:An n type collector region 19 is formed on the main surface 11a of a half-insulated semiconductor layer 11 having lower current carrier concentration and high resistance. Next, an n type emitter region 12 and collector region 13 having high impurity concentration are formed at the region separated from the region 19 by the predetermined interval. A p type high impurity concentration region 14 is formed between the regions 12 and 19. In this case, the region 14 is formed in such a way that a part thereof overlaps on the region 19. A forward bias is given between the regions 12 and 14, while a backward bias between the regions 14 and 19.

Abstract translation: 目的：即使在横向结构中，即使在横向结构中，通过将注入的载流子形成电流路径，确保具有大的电流放大系数，高速运算和稳定均匀的特性，从而在具有高杂质浓度的区域外的半绝缘区域上形成器件。 构成：在具有较低电流载流子浓度和高电阻的半绝缘半导体层11的主表面11a上形成n型集电极区域19。 接下来，在与区域19分离预定间隔的区域处形成具有高杂质浓度的n型发射极区域12和集电极区域13。 在区域12和19之间形成p型高杂质浓度区域14.在这种情况下，区域14形成为使得其一部分与区域19重叠。在区域12和 14，而区域14和19之间的向后偏置。

公开(公告)号：JPH07183606A

公开(公告)日：1995-07-21

申请号：JP34609993

申请日：1993-12-21

Applicant: SONY CORP

Inventor： MASUDA HISASHI ,  UDAGAWA TOSHIKI ,  ARAI MICHIO

IPC: G02F1/37 ,  H01S3/094 ,  H01S3/108 ,  H01S3/109 ,  H01S5/06 ,  H01S3/103

Abstract: PURPOSE:To suppress the average current value of a drive current supplied, and improve the conversion efficiency of waves by nonlinear optical phenomena, and besides, lessen battery power depletion by adding a modulation means to a drive means so as to modulate and convert the drive current. CONSTITUTION:In a drive power source 2, a pulse drive circuit 5 drives an ACC drive circuit by pulses and supplies a semiconductor laser part 3 with pulse currents Ip. The semiconductor laser part 3 drives a semiconductor laser drive 7 and the emitted light is condensed by a converging lens 8, and is emitted to a wavelength converter. In the wave length converter, the light emitted from the semiconductor laser part 3 is entered into a laser oscillator 12, and an Nd:YAG laser medium 10 is excited by the exciting light emitted from the semiconductor laser device 7, and the wavelength of this emitted laser beam is converted into one of green visible light by KPT 11, and is emitted, being amplified in the solid laser oscillator 12. Hereby, the average drive current value is made small, whereby the wavelength conversion efficiency can be improved.

公开(公告)号：JPS62271420A

公开(公告)日：1987-11-25

申请号：JP764887

申请日：1987-01-16

Applicant: SONY CORP

Inventor： NISHIYAMA KAZUO ,  ARAI MICHIO

IPC: H01L21/26 ,  H01L21/268

Abstract: PURPOSE:To reduce impurity diffusion as much as possible, and perform a desired thermal treatment, by applying, continuous incoherent light of high power to a required semiconductor substrate to be subjected to the thermal treatment, and heating it up in a short time. CONSTITUTION:At the time of a thermal treatment, N2 gas is supplied into a guarz tube 2 accommodating a semiconductor wafer 1. On the upper and lower parts outside the quartz tube 2, an infrared ray lamp equipment apparatus 3 is arranged which is provided with a tungusten halogen lamp 4 and radiates continuous incoherent light. The wafer 1 is uniformly irradiated with the reflected light of a parabolic reflection mirror 5. The wafer 1 is supported in a space via four protrusions extending inside a frame-type quarz suspender 6 in a manner in which both main surfaces 1A and 1B are exposed. Thereby the impurity diffusion is reduced as much as possible, and a desired thermal treatment can be performed.

公开(公告)号：JPS57197884A

公开(公告)日：1982-12-04

申请号：JP8315181

申请日：1981-05-29

Applicant: SONY CORP ,  SUMITOMO SPEC METALS

Inventor： ARAI MICHIO ,  YAMAGUCHI HARUHISA ,  TAKEUCHI GIICHI ,  WADA TOSHIAKI ,  KATSUYAMA YOSHIAKI

IPC: H01L43/06

Abstract: PURPOSE:To attain a composite substrate suitable for Hall element with high electron mobility by a method wherein both surfaces of a soft magnetic material and an intermetallic compound semiconductor material are mechanochemically polished, both materials are bonded with each other and then a semiconductor film is polished. CONSTITUTION:One surface of a magnetic material such as a Mn-Zn ferrite substrate 1 is mechanochemically polished, and then an insulative layer 2 of Al2O3 is coated thereon. One surface of an intermetallic compound semiconductor material such as InSb 3 is also mechanochemically polished. The polished surface P1 of a wafer 3 is bonded on the insulative layer 2 of the substrate 1 using adhesives 4. Then, the surface of thus bonded wafer 3 is mechanochemically polished. By so doing, a semiconductor film is formed of a holohedron, thus resulting in electromagnetic transducing Hall elements with high electron mobility.