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公开(公告)号：JP2003115605A
公开(公告)日：2003-04-18
申请号：JP2001308957
申请日：2001-10-04
Applicant: SONY CORP
Inventor： DOI MASATO , OKUYAMA HIROYUKI , BIWA TSUYOSHI , OHATA TOYOJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor luminous element that is easy to fabricate by a semiconductor process and displays satisfactory performance due to excellent crystallinity. SOLUTION: This is a semiconductor luminous element provided with a crystal layer that is selectively grown at an annular opening part formed in a mask layer and has S-planes or the planes that are substantially equivalent to the S-planes tilted to the mask-layer formed plane. In the plane parallel to the S-plane or the plane that is substantially equivalent to the S-plane, the first conductive type layer, an active layer and the second conductive type layer are formed. The crystal layer has an annular top part along the annular opening part, for example, with both sides that are the S-planes or the planes that are substantially equivalent to the S-planes tilted to the mask-formed plane, or the crystal is grown in such a form as to bury the zone surrounded by the annular opening part to have a polygonal cone shape.
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42.发明专利
公开(公告)号：JP2003060233A
公开(公告)日：2003-02-28
申请号：JP2001246335
申请日：2001-08-14
Inventor： TOMOTA KATSUHIRO , DOI MASATO
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can be used appropriately, particularly for, a highly precise image display device by diversifying the light-emitting wavelength of the element by a simple manufacturing method, and to provide a method of manufacturing the element and a semiconductor light-emitting device.
SOLUTION: The semiconductor light-emitting element has a first semiconductor light-emitting layer 17 which emits prescribed light, and a second semiconductor light emitting layer which is constituted of a semiconductor layer composed of a different crystal system from that of the layer 17 and emits light when the layer 11 is excited by the light emitted from the layer 17. The second light- emitting layer 11 is stuck to a semiconductor structure section having the first light-emitting layer 17.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题：提供一种可以通过简单的制造方法使元件的发光波长多样化而适用于特别是高精度图像显示装置的半导体发光元件，并且提供一种方法 制造元件和半导体发光器件。 解决方案：半导体发光元件具有发射预定光的第一半导体发光层17和由与层17不同的晶体系构成的半导体层构成的第二半导体发光层，并发射 当层11被从层17发射的光激发时，第二发光层11粘附到具有第一发光层17的半导体结构部分上。
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公开(公告)号：JP2003046189A
公开(公告)日：2003-02-14
申请号：JP2001235320
申请日：2001-08-02
Inventor： OKUYAMA HIROYUKI , DOI MASATO , BIWA TSUYOSHI , OHATA TOYOJI
CPC classification number: H01S5/1071
Abstract: PROBLEM TO BE SOLVED: To provide an element structure that can realize laser oscillation by means of, particularly, a semiconductor laser element using a GaN-based semiconductor and having an inclined crystalline layer to meet the demand for such a semiconductor laser element that has an energy gap capable of generating short-wavelength laser light of blue color, green color, etc., and superior crystallinity, and returns the generated laser light to an active layer, and to provide a method of manufacturing the structure.
SOLUTION: The semiconductor laser element is constituted by forming a pair of laminated structures each of which is composed of a first-conductivity clad layer and an active layer and has a triangular cross section on a mask layer having selectively formed openings and second-conductivity clad layers on the structures. The laser element realizes laser oscillation by utilizing the multiple reflection of laser light.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题：提供一种能够通过特别是使用GaN基半导体并具有倾斜结晶层的半导体激光元件实现激光振荡的元件结构，以满足对这种半导体激光元件的需求，该半导体激光元件具有 能够产生蓝色，绿色等的短波长激光的能隙，并且具有优异的结晶度，并将生成的激光返回到有源层，并提供一种制造该结构的方法。 解决方案：半导体激光元件通过形成一对叠层结构而构成，每个叠层结构由第一导电覆盖层和有源层构成，并且在具有选择性地形成开口的掩模层和具有第二导电覆层的掩模层上具有三角形横截面 结构上的层。 激光元件利用激光的多重反射实现激光振荡。
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公开(公告)号：JP2002319702A
公开(公告)日：2002-10-31
申请号：JP2001121689
申请日：2001-04-19
Applicant: SONY CORP
Inventor： BIWA TSUYOSHI , OKUYAMA HIROYUKI , DOI MASATO , OHATA TOYOJI
IPC: C30B25/02 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/00 , H01L33/06 , H01L33/32 , H01S5/323 , H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a method by which a nitride semiconductor element having superior characteristics, such as a superior light emitting characteristic, etc., can be manufactured by solving problems, such as the deterioration of an active layer, etc., caused by the growth temperatures of the active layer and nitride semiconductor layers which are laminated upon another after the active layer is grown. SOLUTION: The active layer is vapor phase grown on a substrate at a first growth temperature (T3) and all of the nitride semiconductor layers which are laminated upon another after the active layer is grown are grown at another growth temperature (T4) which is higher than the first temperature (T3) by
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45.发明专利
公开(公告)号：JP2002246649A
公开(公告)日：2002-08-30
申请号：JP2001044832
申请日：2001-02-21
Applicant: SONY CORP
Inventor： DOI MASATO , OKUYAMA HIROYUKI , BIWA TSUYOSHI , OHATA TOYOJI
Abstract: PROBLEM TO BE SOLVED: To improve emission efficiency in a semiconductor light-emitting device for taking out light from a substrate side. SOLUTION: An electrode layer 16 is formed on a p-type semiconductor layer (GaN layer) 14 that is formed on an active layer 13, and a nickel layer 15 is formed as a contact metal layer for achieving ohmic contact having the length of intrusion of light that is generated at the active layer 13 or a thickness that is equal to or less than it between the electrode layer 16 and the p-type semiconductor layer (GaN layer) 14. Since the nickel layer 15 is thin enough reflection efficiency can be improved.
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Patent Agency Ranking
公开(公告)号：JP2002050580A
公开(公告)日：2002-02-15
申请号：JP2000232821
申请日：2000-08-01
Applicant: SONY CORP
Inventor： BIWA TSUYOSHI , OKUYAMA HIROYUKI , DOI MASATO , OHATA TOYOJI
IPC: C30B29/38 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205 , H01L33/30 , H01L33/32 , H01S5/323 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a vapor phase growing method for nitride semiconductor, whereby a uniform crystal layer can be obtained with a high reproducibility by the vapor phase growth technology for gallium nitride compound semiconductors, etc. SOLUTION: The method comprises forming a protective film for obstructing the crystal growth on a substrate, so that a first nitride semiconductor layer is exposed through window regions partly opened through the protective film, starting the selective growth of a second nitride semiconductor layer from the first nitride semiconductor layer at a required growth starting temperature and rising the temperature over the growth starting temperature to continue the crystal growth. A uniform low-temperature grown layer is obtained by the vapor phase growth at a low temperature before temperature rise, and then a high-temperature grown layer is formed to form a uniform and highly reproducible crystal layer which reflects the uniformity of the low-temperature grown layer.
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公开(公告)号：JP2000022275A
公开(公告)日：2000-01-21
申请号：JP18092598
申请日：1998-06-26
Applicant: SONY CORP
Inventor： YAMAGUCHI KYOJI , DOI MASATO , TAMADA HITOSHI
Abstract: PROBLEM TO BE SOLVED: To suppress irregularities on the end face of a resonator and etching bottom face while enhancing the operational characteristics, the lifetime and the utilization efficiency of a substrate. SOLUTION: A semiconductor layer constituting a laser resonator 2 is grown on an n-type GaAs substrate 1 and after a waveguide stripe 3 is formed on the semiconductor layer, the semiconductor layer is etched at a position in a part corresponding to the waveguide stripe 3 not intersecting the surface of the semiconductor layer thus forming a resonator end face 5 of etching end face. A rising mirror or a photodiode may be formed on the etching end face 1a of the n-type GaAs substrate 1.
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公开(公告)号：JPH08297854A
公开(公告)日：1996-11-12
申请号：JP17342095
申请日：1995-07-10
Applicant: SONY CORP
Inventor： MIZUNO TAKESHI , DOI MASATO
IPC: G11B11/10 , G11B7/09 , G11B7/135 , G11B11/105 , H01L31/0232 , H01L31/16
Abstract: PURPOSE: To miniaturize the whole of an optical device by making the device to be a CLC (confocal laser coupler) constitution in which the return light from an irradiated part is returned in the same optical path as that of the excit light from a light emitting part and light receiv-parts are arranged in the vicinity of confocal positions of the return light. CONSTITUTION: A second light receiving part 15B by a photodetector PD receiving and detecting the return light by the optical path shifted from an outgoing path is provided in the vicinity of the convergent position of the shifted light. At this time, since a difference is generated in convergent positions of optical paths at the time the return light is transmitted and defracted in a mirror plate 20, the detecting of a focus servo signal by an astigmatic method is possible by the second light receiving part 15B by actively utilizing this. In this case, the simplifying and the miniaturizing of the constitution of the whole of the optical device are attained by forming a light emitting part 14 and a first light receiving part 15B on a common semiconductor substrate 16.
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公开(公告)号：JPH07266587A
公开(公告)日：1995-10-17
申请号：JP8558894
申请日：1994-03-31
Applicant: SONY CORP
Inventor： NEMOTO KAZUHIKO , MATSUDA OSAMU , HIGUCHI YOSHINOBU , DOI MASATO
Abstract: PURPOSE:To make it possible to detect the intensity of a heating beam such as laser beam with a concurrent action to maintain the output utilization efficiency of the heating beam at high level, and enhance detection accuracy by introducing a beam intensity detection means through an area between a heating beam emission means and a recording material storage part during the non- heating time of a recording material. CONSTITUTION:If data is optically recorded, i.e., if a dye 22 is not heated by a laser beam, a light-receiving element 79 is inserted into an area between a laser 18 and a dye storage part 37 and the laser beam L having the same output intensity as an emitted laser beam L during recording is emitted directly into the light-receiving element 79 for front monitoring. A printer head 40 can use an output of the laser beam L required for the gasification of the dye on a recording sheet to a maximum extent without wasting the output. This is because the light-receiving element 79 is introduced into the proceeding direction of the emitted laser beam L only when the output is monitored, and the light- receiving element 79 is restored to an original position when recording data.
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公开(公告)号：JPH07193274A
公开(公告)日：1995-07-28
申请号：JP33357193
申请日：1993-12-27
Applicant: SONY CORP
Inventor： NARUI HIRONOBU , DOI MASATO , MATSUDA OSAMU
Abstract: PURPOSE:To facilitate the leading-out of a signal for detecting the distance from an irradiation part, e.g. the leading-out of a servo signal for focusing control of light irradiation to the irradiation part. CONSTITUTION:The equipment is provided with the following; an irradiation part 2, an optical element 21 having a light emitting part 1 and a first light receiving part 41, at least a second light receiving part 42 and a third light receiving part 43 which put the optical element 21 between them and are arranged on both sides of the element 21, and a covergent means 3. The first light receiving part 41 is arranged in the vicinity of the light emitting part 1, and receives the return light LR of the emitted light from the light emitting part 1 which return light travels from the irradiation part 2 toward the light emitting part 1. The second light receiving part 42 and the third light receiving part 43 are arranged step-wise in the manner in which one of the distances between the light receiving surfaces of the parts 42, 43 and the irradiation part 2 is large and the other is small as compared with the distance between the light receiving surface of the first light receiving part 41 and the irradiation part 2.
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