公开(公告)号：JPH08330421A

公开(公告)日：1996-12-13

申请号：JP13141995

申请日：1995-05-30

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PURPOSE: To improve the rigidity of an interlayer insulating film, for which a low dielectric constant film is used, without giving an adverse effect on the reliability of a semiconductor device. CONSTITUTION: An interlayer insulating film 13 is formed by covering the circumference of the wiring 42 provided on a semiconductor device, and the interlayer insulating film 13 consists of the first to the fourth low dielectric constant films 21 to 24, having the dielectric constant 1 to 3.5, formed on the circumference of the wiring 42 and between wirings 42, and the supporting layers (first and second supporting layers 31 and 32) formed in a low dielectric constant film among the first and the second low dielectric constant films 21 and 22 located on the upper and the lower parts of the wiring 42 and the fourth low dielectric constant films 23 and 24, or the supporting layers (first and second supporting layers 31 and 32).

公开(公告)号：JPH08181133A

公开(公告)日：1996-07-12

申请号：JP32468194

申请日：1994-12-27

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/312

Abstract: PURPOSE: To contrive to reduce the dielectric constant of a dielectric film, which has a heat resistance, a moisture absorption and a plasma resistance and is used for an insulating film in a semiconductor device, and to make it possible to apply the dielectric film to a process of manufacturing the semiconductor device. CONSTITUTION: A dielectric material 1 is one consisting of a structure, wherein fullerene (C60 or C70 having a chemical space) 3 are dispersed in a dielectric base material (a silicone, an amorphous fluororesin, a polyimide and a poly-para- xylylene or polyamide compound) 2. A dielectric film consisting of the dielectric material 1 is manufactured by a method wherein the fullerene are added to a polysiloxane polymer to manufacture a coating liquid or a polyimide monomer, an amorphous fluororesin monomer or a poly-para-xylylene monomer is dissolved in an organic solvent containing an alcohol as its main component and the fullerene are added to the solution to manufacture a coating liquid, then, the coating liquid is extended on a substrate to form a coat film and the coat film is cured to form the dielectric film.

公开(公告)号：JPH08162528A

公开(公告)日：1996-06-21

申请号：JP372795

申请日：1995-01-13

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PURPOSE: To contrive a low power-consumption in a high-density wiring and a high-speed operation by providing a structure which can improve the resistance to plasma, preventing the occurrence of corrosion caused by the use of low- dielectric material for an interlayer insulating film. CONSTITUTION: Wiring 14 is formed on a substrate 11 wherein at least its surface has insulation property, and the first first insulating film 15 is formed in the state that it covers each wiring 14, and the second insulating film 16 smaller in dielectric constant than that of the first insulating film 15 is formed at least between the wirings 14. The second insulating film 16 between the wirings 14 is made thicker by 10 to 100% in the height direction and the depth direction than the height of the wiring 14, or, films (not shown) consisting of low dielectrics are formed through the first insulating films or films equivalent to them above and below the wiring 14.

公开(公告)号：JPH06220639A

公开(公告)日：1994-08-09

申请号：JP10763591

申请日：1991-05-13

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/203 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285

Abstract: PURPOSE:To provide a vacuum CVD device which enables an improved step coverage and formation of buried layers contg. no seam part by filling contact holes, etc. CONSTITUTION:This vaccum CVD device is provided with the CVD reaction chamber 6 having the CVD feed gas inlet 5, the supporting base 1, on which the substrate to be treated 2 is placed, and a gas distributing means that is disposed between the CVD feed gas inlet 5 and the substrate to be treated 2 to uniformly distribute the feed gas. The gas distributing means is provided with the plural passages 10a arranged in the approximately perpendicular direction to the surface of the substrate to be treated 2. Thus, any seam part in the contact holes is prevented from being generated.

公开(公告)号：JPH05304102A

公开(公告)日：1993-11-16

申请号：JP13430292

申请日：1992-04-27

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/31

Abstract: PURPOSE:To prevent CVD and the like at unnecessary parts, which is a problem when outer peripheral clamps are employed, by introducing purge gas thereby supporting a substrate without requiring any outer peripheral clamp and to perform film deposition process and other processes with high surface uniformity by controlling purge gas flow. CONSTITUTION:The semiconductor fabrication system comprises a purge gas introduction mechanism (purge gas introduction holes 6) provided for a semiconductor substrate supporting table constructed integrally or divided into two sections, and purge gag flow rate control mechanisms (flow rate control valves 2) arranged on the semiconductor substrate supporting table at least two points thereof.

公开(公告)号：JPH05166730A

公开(公告)日：1993-07-02

申请号：JP35075591

申请日：1991-12-12

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/205

Abstract: PURPOSE:To suppress adverse influences of a purge gas on film formation on a wafer substrate and to prevent particles from being generated by forming a means to hold workpieces out of a high-melting point metal of high adhesiveness with tungsten in a title equipment which makes a treatment by holding a workpiece. CONSTITUTION:Clamps 8, 10, 12 as means to hold a wafer W that is the workpiece are formed out of a high-melting point metal. Since the clamps 8, 10, 12 are formed out of a high-melting point metal, a tungsten film and the clamps 8, 10, 12 show high adhesiveness even when the tungsten film is formed over the clamps 8, 10, 12 during film forming work, so that the tungsten film does not peel off the clamps 8, 10, 12. Therefore, the tungsten film neither turns into particles nor gives adverse influences on formation of a tungsten film on a wafer substrate W. Thus, a high-quality tungsten film can be formed over the wafer substrate W.

公开(公告)号：JPH05144737A

公开(公告)日：1993-06-11

申请号：JP33157691

申请日：1991-11-21

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/205 ,  H01L21/28 ,  H01L21/285

Abstract: PURPOSE:To provide a CVD method wherein a bad coverage in an initial- growth-nucleus formation process in conventional CVD methods is improved and the concentration of fluorine atoms contained in a formed layer by a compo sition containing a high melting point metal can be lowered. CONSTITUTION:In a CVD method, an opening part 14 formed in an interlayer insulating layer 12 on a semiconductor substrate is filled with a composition containing a high-melting point metal. The CVD method is composed of the following: an initial-growth-nucleus formation process wherein a gas composed of a high-melting point metal compound is reduced by SiH2F2 gas and a crystal nucleus layer 20 by a composition containing a high-melting point metal is formed on the surface of at least the opening part 14; and a film formation process wherein a thin-film raw-material gas composed of high-melting point metal compound is reduced by a reducing gas and a layer 22 by a composition containing a high-melting point metal is formed at the inside of at least the opening part 14.

公开(公告)号：JPH04345022A

公开(公告)日：1992-12-01

申请号：JP11761991

申请日：1991-05-22

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285

Abstract: PURPOSE:To prevent a thin metal film (a metal film) from being deposited on a wafer, on which a close contact layer is not formed as well as to provide a blanket metal CVD device capable of preventing the effect of purge gas in a wafer clamp to CVD reaction. CONSTITUTION:A blanket metal CVD device, in which a semiconductor substrate (a wafer) 1 is fixed on a susceptor 2 and which is provided with a clamp 13 having a purge gas 6 supply mechanism for purging raw gas 5 in its interior, is formed into a constitution wherein a purge gas exhaust mechanism (a purge gas exhaust vent) 7b for exhausting purge gas 6 is provided in the clamp.

公开(公告)号：JPH03280425A

公开(公告)日：1991-12-11

申请号：JP8030590

申请日：1990-03-28

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/768

Abstract: PURPOSE:To enhance the thermal resistance and the reliability by a method wherein a selectively growing film is formed on the bottom part of the first opening part formed in the first thin insulating film on a semiconductor substrate and then the second insulating film having the second opening part exposed in the bottom part of the selectively growing film is formed so as to selectively grow a high melting point material in the second opening part. CONSTITUTION:The first insulating film 7 having the first opening part 8 is formed on a semiconductor substrate 1 and then a selectively growing film 10 is formed as if covering the semiconductor substrate 1 exposed in the bottom part of the first opening part 8. Next, the second insulating film 12 is formed on the first insulating film 7 including the film 10 while the second opening part 13 is formed above the first opening part 8 to expose the selectively growing film 10 in the bottom part of the opening part 13 and then a high melting point metallic material 14 is selectively grown on the film 10 to be buried-in without fail thereby enabling an excellent electrode to be formed. Furthermore, a barrier metal layer 29 is formed on the bottom part of the first opening part 28 so as to form a selectively growing film 30 on the barrier metal layer 29 thereby enabling an electrode wiring having sufficient thermal resistance to be formed.

公开(公告)号：JPH03214734A

公开(公告)日：1991-09-19

申请号：JP1009290

申请日：1990-01-19

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI ,  SATO JUNICHI

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/285

Abstract: PURPOSE:To prevent clogging of a pipe and generation of a particle by using the chemical vapor deposition(CVD) method employing a raw material gas including at least TiBr4 gas and N gas. CONSTITUTION:After forming an SiO2 insulation film 12 on a silicon substrate 10 where an impurity diffusion region 1 is formed, a contact hole 13 whose opening width is 0.5-0.6mum is provided for exposing the impurity diffusion region 11 and then a TiN film 14 is formed on the inner wall and the exposed surface. When forming the TiN film 14, a low pressure CVD furnace is used and then TiBi4 and ammonium (NH3) are used as source gases while H2 or N2 is used as a purge gas. Further, a tungsten film 15 is allowed to grow on the entire surface of the TiN film 14, the surface of the SiO2 insulation film 12 is exposed onto the surface by etching back a tungsten film 15, and then an upper-layer wire aluminum film 16 is formed on the tungsten film 15 and the SiO2 insulation film 12, thus preventing generation of particles and blocking of pipes etc.