Driving psychology deciding method and device, and driving supporting method and device
    41.
    发明专利
    Driving psychology deciding method and device, and driving supporting method and device 审中-公开
    驾驶心理学决策方法和设备,以及驾驶支持方法和设备

    公开(公告)号:JP2003048448A

    公开(公告)日:2003-02-18

    申请号:JP2001236823

    申请日:2001-08-03

    Abstract: PROBLEM TO BE SOLVED: To provide a driving supporting technique for maintaining a safety driving by accurately deciding a psychological state of a driver and making the driver recognize the decision result.
    SOLUTION: This deciding device is provided with an input system 10, a data control system 20, a decision control system 30 and an output system 40. In the input system 10, a traveling route is specified, and an actual operation performed at the time of an actual traveling on the traveling route is inputted into the decision control system 30. In the decision control system 30, a basic operation required on the specified traveling route is read from the data control system 20, the basic operation and the inputted actual operation are compared, and the psychological state of the driver is decided based on a difference of the driving operation. The decision result is outputted to the driver side via the output system 40.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题:提供一种用于通过精确地确定驾驶员的心理状态并使驾驶员识别决定结果来维持安全驾驶的驾驶辅助技术。 解决方案:该判定装置设置有输入系统10,数据控制系统20,判定控制系统30和输出系统40.在输入系统10中,指定了行进路线,并且此时执行的实际操作 在判定控制系统30中,从数据控制系统20,基本操作和输入的实际操作中读取指定的行进路线所需的基本操作 并且基于驾驶操作的差异来确定驾驶员的心理状态。 决定结果通过输出系统40输出到驱动器侧。

    METHOD FOR MEASURING CONTACT RESISTANCE OF BIOLOGICAL SIGNAL MEASURING ELECTRODE

    公开(公告)号:JPH1062463A

    公开(公告)日:1998-03-06

    申请号:JP22159196

    申请日:1996-08-22

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To halve the time required for measuring contact resistance by measuring the contact resistance for two electrodes through a single measurement. SOLUTION: An AC voltage v1 generated from an oscillator 2 is applied between first and second electrodes Da, Db through a reference resistor R0. A differential amplifier circuit 5 generates a voltage corresponding to the voltage across the reference resistor R0 and then the voltage is converted through a rectifier 8 into a DC voltage signal VR0. A differential amplifier circuit 6 generates a voltage corresponding to the voltage across a contact resistor R2 and a rectifier 9 converts the voltage into a DC signal VR1. A voltage amplifier 7 generates a voltage corresponding to the voltage across the contact resistor R2 and a rectifier 10 converts the voltage into a DC voltage signal. A divider 11 divides the DC signal VR1 by the DC voltage signal VR0 and the resistance of a first contact resistor R1 based on the division output I1. A divider 12 divides the DC voltage signal VR2 by the DC voltage signal VR0 and the resistance of the first contact resistor R2 is determined based on the division output I2.

    TABLET TYPE DIGESTIVE ORGAN DIAGNOSTIC APPARATUS

    公开(公告)号:JPH057573A

    公开(公告)日:1993-01-19

    申请号:JP16192291

    申请日:1991-07-03

    Applicant: SONY CORP

    Inventor: KAMATA MIKIO

    Abstract: PURPOSE:To achieve an assistance in the prevention and treatment of disease by allowing the obtaining of information in a non-destructive manner about condition of internal digestive organ. CONSTITUTION:A sensor 2 such as chemical sensor or biosensor is provided on the surface and an IC3 such as controller and memory and a power source device 4 for the sensor and the memory inside. The product thus obtained can be swallowed down and recovered after the discharge.

    HOT ELECTRON TRANSISTOR
    48.
    发明专利

    公开(公告)号:JPH03218069A

    公开(公告)日:1991-09-25

    申请号:JP1312690

    申请日:1990-01-23

    Applicant: SONY CORP

    Inventor: KAMATA MIKIO

    Abstract: PURPOSE:To make electrons entering a low band drift toward a collector and to contrive the improvement of the transfer efficiency of the electrons from a base and the improvement of the high-speed property of transfer of the electrons by a method wherein an HET, an inclination is formed on the low band in the base layer of the HET. CONSTITUTION:A base layer 3 is constituted of an n InxGa1-xAs (the (x) is the ratio of atoms) layer and the added amount of the In is gradually reduced from an emitter barrier layer 4 toward the side of a collector barrier layer 2. When a necessary voltage set the side of an emitter as a negative pole is applied between an emitter electrode 7 and a collector electrode 9, hot electrons of a high energy enter the side of the layer 3 from the side of an emitter layer 5. At this time, the energy normally enters a low band, but the electrons are drifted by the inclination of the low band and are efficiently transferred to a collector.

    HIGH-RESISTANCE ALINAS CRYSTAL FILM

    公开(公告)号:JPH01241817A

    公开(公告)日:1989-09-26

    申请号:JP7024888

    申请日:1988-03-24

    Applicant: SONY CORP

    Abstract: PURPOSE:To obtain a semi-insulating AlInAs crystal film of high resistance, excellent in crystallinity, by Fe doping at the time of a crystal growth of AlInAs. CONSTITUTION:A buffer layer 3 by semi-insulating AlInAs, a channel layer 4 by undoped GaInAs, a spacer layer 5 by undoped AlInAs and an n-AlInAs layer 6 are formed in turn on a semi-insulating InP substrate 2 by a MOCVD method. A gate electrode 7, a source electrode 8, and a drain electrode 9 and formed on the n-AlInAs layer 6. A two-dimensional electron gas 10 is formed in the undoped channel layer 4 of GaInAs. It is formed in this way. Since the thickness of the channel layer 3 is thin 100Angstrom or thereabouts at the current design value, if it is grown in an InP substrate 2 directly, one with excellent crystallization cannot be obtained owing to an influence of the substrate 2. To eliminate the influence of the substrate 2 and form a highly crystalline channel layer, a buffer layer is interposed. Therefore, for a buffer layer, it must by formed as thin as possible in order to eliminate the influence of a substrate to a channel layer.

    SEMICONDUCTOR DEVICE
    50.
    发明专利

    公开(公告)号:JPS59222966A

    公开(公告)日:1984-12-14

    申请号:JP9857883

    申请日:1983-06-02

    Applicant: SONY CORP

    Inventor: KAMATA MIKIO

    Abstract: PURPOSE:To reduce the variance of threshold voltage in an FET utilizing high electronic mobility by hetero-interfaces while improving controllability, stability and reproducibility by forming double hetero-junction structure in which AlGaAs or an AlAs layer in low impurity concentration is formed, GaAs layers are arranged on both surfaces of AlGaAs or the AlAs layer while holding it and hetero-junctions are formed to each of the interfaces. CONSTITUTION:A first layer 1 is constituted by a non-doped GaAs base body SO, and a non-doped AlxGa1-xAs or AlAs second layer 2 and a third layer such as an n type GaAs or AlyGa1-yAs (y

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