公开(公告)号：CA1238122A

公开(公告)日：1988-06-14

申请号：CA497744

申请日：1985-12-16

Applicant: SONY CORP

Inventor： KATO YOJI ,  WATANABE SEIICHI ,  KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/43 ,  H01L29/778 ,  H01L29/12

Abstract: A semiconductor device according to the invention comprises: a GaAs substrate; a GaAs layer of a low impurity concentration formed on the GaAs substrate; an AlGaAs layer of a low impurity concentration formed on the GaAs layer; a gate electrode of silicon or a compound of silicon and a metal formed on the AlGaAs layer; and a source electrode and a drain electrode formed on the AlGaAs layer. With this structure, a high electron mobility transistor in which a threshold voltage Vth is substantially 0 can be obtained.

公开(公告)号：FR2582152B1

公开(公告)日：1989-12-08

申请号：FR8518969

申请日：1985-12-20

Applicant: SONY CORP

Inventor： KATO YOJI ,  WATANABE SEIICHI ,  KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/43 ,  H01L29/778 ,  H01L29/76

Abstract: A high electron mobility transistor in which a threshold-voltage Vth is substantially zero comprises a GaAs substrate (1), a GaAs layer (2) of a low impurity concentration formed on the substrate (1), an AlGaAs layer (13) of a low impurity concentration formed on the GaAs layer (2), a gate electrode (5) of silicon or a compound of silicon and a metal formed on the AlGaAs layer (13), and a source electrode and a drain electrode (8, 9) formed on the AlGaAs layer (13). Other semiconductor materials e.g. AlGaIn or AlInP may be used for the layer (13).

公开(公告)号：DE3545434A1

公开(公告)日：1986-07-03

申请号：DE3545434

申请日：1985-12-20

Applicant: SONY CORP

Inventor： KATO YOJI ,  WATANABE SEIICHI ,  KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/43 ,  H01L29/778 ,  H01L27/12 ,  H01L29/78 ,  H01L29/46

Abstract: A high electron mobility transistor in which a threshold-voltage Vth is substantially zero comprises a GaAs substrate (1), a GaAs layer (2) of a low impurity concentration formed on the substrate (1), an AlGaAs layer (13) of a low impurity concentration formed on the GaAs layer (2), a gate electrode (5) of silicon or a compound of silicon and a metal formed on the AlGaAs layer (13), and a source electrode and a drain electrode (8, 9) formed on the AlGaAs layer (13). Other semiconductor materials e.g. AlGaIn or AlInP may be used for the layer (13).

公开(公告)号：GB2168847A

公开(公告)日：1986-06-25

申请号：GB8531441

申请日：1985-12-20

Applicant: SONY CORP

Inventor： KATO YOJI ,  WATANABE SEIICHI ,  KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/43 ,  H01L29/778 ,  H01L29/46 ,  H01L29/76

Abstract: A high electron mobility transistor in which a threshold-voltage Vth is substantially zero comprises a GaAs substrate (1), a GaAs layer (2) of a low impurity concentration formed on the substrate (1), an AlGaAs layer (13) of a low impurity concentration formed on the GaAs layer (2), a gate electrode (5) of silicon or a compound of silicon and a metal formed on the AlGaAs layer (13), and a source electrode and a drain electrode (8, 9) formed on the AlGaAs layer (13). Other semiconductor materials e.g. AlGaIn or AlInP may be used for the layer (13).

公开(公告)号：DE3545434C2

公开(公告)日：1995-07-20

申请号：DE3545434

申请日：1985-12-20

Applicant: SONY CORP

Inventor： KATO YOJI ,  WATANABE SEIICHI ,  KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/43 ,  H01L29/778 ,  H01L21/8252 ,  H01L29/49

Abstract: A high electron mobility transistor in which a threshold-voltage Vth is substantially zero comprises a GaAs substrate (1), a GaAs layer (2) of a low impurity concentration formed on the substrate (1), an AlGaAs layer (13) of a low impurity concentration formed on the GaAs layer (2), a gate electrode (5) of silicon or a compound of silicon and a metal formed on the AlGaAs layer (13), and a source electrode and a drain electrode (8, 9) formed on the AlGaAs layer (13). Other semiconductor materials e.g. AlGaIn or AlInP may be used for the layer (13).

公开(公告)号：GB2168847B

公开(公告)日：1988-05-25

申请号：GB8531441

申请日：1985-12-20

Applicant: SONY CORP

Inventor： KATO YOJI ,  WATANABE SEIICHI ,  KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/43 ,  H01L29/778 ,  H01L29/46 ,  H01L29/76

Abstract: A high electron mobility transistor in which a threshold-voltage Vth is substantially zero comprises a GaAs substrate (1), a GaAs layer (2) of a low impurity concentration formed on the substrate (1), an AlGaAs layer (13) of a low impurity concentration formed on the GaAs layer (2), a gate electrode (5) of silicon or a compound of silicon and a metal formed on the AlGaAs layer (13), and a source electrode and a drain electrode (8, 9) formed on the AlGaAs layer (13). Other semiconductor materials e.g. AlGaIn or AlInP may be used for the layer (13).

公开(公告)号：FR2582152A1

公开(公告)日：1986-11-21

申请号：FR8518969

申请日：1985-12-20

Applicant: SONY CORP

Inventor： KATO YOJI ,  WATANABE SEIICHI ,  KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/43 ,  H01L29/778 ,  H01L29/76

Abstract: A high electron mobility transistor in which a threshold-voltage Vth is substantially zero comprises a GaAs substrate (1), a GaAs layer (2) of a low impurity concentration formed on the substrate (1), an AlGaAs layer (13) of a low impurity concentration formed on the GaAs layer (2), a gate electrode (5) of silicon or a compound of silicon and a metal formed on the AlGaAs layer (13), and a source electrode and a drain electrode (8, 9) formed on the AlGaAs layer (13). Other semiconductor materials e.g. AlGaIn or AlInP may be used for the layer (13).

公开(公告)号：JP2006041888A

公开(公告)日：2006-02-09

申请号：JP2004218533

申请日：2004-07-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SAITO NAOKI ,  SAKAI YUSUKE ,  KAMATA MIKIO

IPC: H04N7/14

CPC classification number: H04N7/17318 ,  H04N7/15 ,  H04N7/155 ,  H04N21/2387 ,  H04N21/242 ,  H04N21/25875 ,  H04N21/262 ,  H04N21/4135 ,  H04N21/42203 ,  H04N21/4223 ,  H04N21/4307 ,  H04N21/4316 ,  H04N21/4325 ,  H04N21/44012 ,  H04N21/44204 ,  H04N21/47202 ,  H04N21/4788 ,  H04N21/8355

Abstract: PROBLEM TO BE SOLVED: To record contents which speakers at remote places simultaneously have viewed, and video images and voices of the speakers so that they can be reproduced. SOLUTION: In a step S11, synthesizing information including parameters concerning the setting of the compositing status of video images and voices of contents and the setting of the synthesizing status of video images and voices of a user, and a present standard time is generated and stored. In a step S13, the standard time is added to the contents currently reproduced to start recording. In a step S15, the standard time is added to real time data of a user A etc. to start recording. In a step S17, the standard time is added to real time data of a user X etc. to start recording. In a step S18, it is determined whether or not the setting of a composition is changed. If the setting is changed in a step S19, the synthesizing information is regenerated and stored. This apparatus is applicable to a communication apparatus between remote places, for example. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：记录远程场所的扬声器同时观看的内容，以及扬声器的视频图像和声音，以便再现。 解决方案：在步骤S11中，包括关于视频图像的合成状态和内容的声音的设置以及用户的视频图像和语音的合成状态的设置以及当前标准时间的合成信息是 生成和存储。 在步骤S13中，将标准时间添加到当前再现的内容以开始记录。 在步骤S15中，将标准时间添加到用户A等的实时数据以开始记录。 在步骤S17中，将标准时间添加到用户X等的实时数据以开始记录。 在步骤S18中，确定组合物的设置是否改变。 如果在步骤S19中改变设置，则再生并存储合成信息。 该装置例如适用于偏远地点之间的通信装置。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2002192983A

公开(公告)日：2002-07-10

申请号：JP2000395039

申请日：2000-12-22

Applicant: SONY CORP ,  TOYOTA MOTOR CORP

Inventor： SASAKI MAKOTO ,  KAMATA MIKIO ,  SHINADA SATORU ,  NUNOKAWA KATSUHIKO ,  OKAJIMA HIROAKI ,  NEZU KOUTA

IPC: B60K35/00

Abstract: PROBLEM TO BE SOLVED: To make an automobile more familiar to an occupant through an on-vehicle device, the automobile, and an information processing method. SOLUTION: Illuminations 2 installed on the inside of the automobile are lit according to automobile information DC obtained by detecting a state of the automobile and occupant information DB obtained by detecting a state of the occupant.

公开(公告)号：JP2001034784A

公开(公告)日：2001-02-09

申请号：JP20953199

申请日：1999-07-23

Applicant: SONY CORP

Inventor： KAMATA MIKIO

IPC: G09B9/02 ,  A63F13/245 ,  A63F13/42 ,  A63F13/55 ,  A63F13/57 ,  A63F13/65 ,  G06T13/20 ,  G06T15/70 ,  A63F13/00

Abstract: PROBLEM TO BE SOLVED: To match movement of an object represented by a computer with the movement of the actual object. SOLUTION: When a moving state of a four-wheeled automobile model 2 present at a gaze position 1 of a user in a virtual space 3 that the user 1 generates by operating a moving picture generating means is represented by moving the model according to arithmetic values calculated by the moving picture generating means according to operation by a method for representing actual movement in, for example, a driving simulator game or the like, the arithmetic values are corrected with data of the moving state corresponding to the actual driving operation of the four-wheeled automobile corresponding to the four-wheeled automobile model 2 and the movement of this model 2 can be represented really as the movement profiling the moving state corresponding to the actual driving operation of the four-wheeled automobile.