公开(公告)号：JPH10206354A

公开(公告)日：1998-08-07

申请号：JP1050797

申请日：1997-01-23

Applicant: SONY CORP

Inventor： KUDO YOSHIHIRO ,  RYU KOSUKE ,  KAWATO SEIJI

IPC: G01N23/201 ,  G01N23/207 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To calculate the density ρ of a thin film on the surface of a sample by making the X-ray incident on the sample at a low angle, and detecting the reflected and refracted X-ray by the sample to be substituted in the prescribed formula. SOLUTION: The X-ray 1 is incident on a sample 10 at a low angle through a monochrometer 4 and a slit 5, the reflected X-ray 2 from the sample 10 is detected by a slit 6 and a detector 7, the critical angle θc of total reflection of the sample is obtained from the intensity distribution, the refracted X-ray 3 is detected from a slit 8 and a detector 9 to obtain the angle θ0 of the Bragg peak of the sample. A thin film on the surface of the sample 10 is removed, and the critical angle θc' of total reflection and the angle θ0' of the Bragg peak are obtained through the similar measurement. The data are substituted in the formula for operation, where the double sign means + when θc>=θc', and - when θc

公开(公告)号：JPH09304307A

公开(公告)日：1997-11-28

申请号：JP14656996

申请日：1996-05-16

Applicant: SONY CORP

Inventor： KUDO YOSHIHIRO ,  RYU KOSUKE ,  KAWATO SEIJI

IPC: G01N23/205 ,  G01N23/207 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a method for detecting the correct lattice deflection of a crystal by correcting a nonuniform diffracted X-ray intensity distribution of an X-ray topograph that is not derived from the crystallinity of a sample crystal. SOLUTION: This measuring method uses an X-ray topograph taking optical system to take an X-ray topograph and, at the same time, measures a diffracted X-ray intensity curve. Next, the difference in Bragg condition of a sample crystal is calculated from the diffracted X-ray intensity curve, the peak intensity fluctuations of the diffracted X-ray intensity curve in continuous regions are calculated, and using these values, the diffracted X-ray intensity distribution of the X-ray topograph of the sample crystal is corrected; the fluctuation ratio Δd/(d) of the lattice spacing and the fluctuation Δα of the lattice azimuth, both of which do not contain components which are not derived from crystallinity, from the diffracted X-ray intensity distribution corrected are calculated.

公开(公告)号：JPH07286975A

公开(公告)日：1995-10-31

申请号：JP10214694

申请日：1994-04-15

Applicant: SONY CORP

Inventor： KOJIMA SHIGERU ,  RYU KOSUKE ,  KUDO YOSHIHIRO ,  KAWATO SEIJI

IPC: G01N23/223

Abstract: PURPOSE:To enable detection sensitivity (S/N) to be increased with its back ground fully decreased, and also enable sensitivity to be much more increased with radiation electromagnetic waves high in brightness made possible to be used. CONSTITUTION:This invention is concerned with the analysis device by electromagnetic waves (total reflection fluorescence X-ray analysis device in particular), which is provided with an irradiation means irradiating electromagnetic waves such as high brightness X-rays and the like to an object to be analyzed (heat source 51, monochromater 2 and collimater slit 3), a detection means such as a semiconductor detector 8 and the like, which detects electromagnetic waves individual to an object 5, generated out of the object 5 (fluorescence X-rays in particular), and furthermore with a back ground reducing means such as a slit 40 and the like, which is interposed between the object 5 and the irradiating means.

公开(公告)号：JPS61198638A

公开(公告)日：1986-09-03

申请号：JP3784486

申请日：1986-02-22

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI ,  AOKI YOSHIO ,  WAKAYAMA SHOJI

IPC: H01L29/00 ,  H01L21/20 ,  H01L21/322

Abstract: PURPOSE:To obtain the title device with the generation of crystal defects entirely eliminated while making use of respective merits of the conventional CZ crystal and FZ crystal, by a method wherein an Si substrate is provided with an epitaxial layer containing an impurity other than the dopant at 5X10 -X10 atoms/cm , and a semiconductor element is formed to the epitaxial layer. CONSTITUTION:An Si substrate is provided with an epitaxial layer containing an impurity other than the dopant at 5X10 -X10 atoms/cm , and a semiconductor element is formed to the epitaxial layer. The oxygen concentration in the crystal is set at 5X10 atoms/cm or more, higher than that in the conventional FZ crystal, and is allowed to have pinning effect. Besides, the growth of precipitates caused by overoxygen is prevented by setting the oxygen concentration at 1X10 atoms/cm or less, lower than the solid solution limit at a variety of heat-treating temperatures. As a result, the noise characteristic, leakage current characteristic, switching characteristic, storage characteristic of the CCD, etc., and the like can be prominently improved.

公开(公告)号：JPS6120152B2

公开(公告)日：1986-05-21

申请号：JP13509976

申请日：1976-11-08

Applicant: Sony Corp

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI

IPC: H01L29/762 ,  H01L21/339 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/04 ,  H01L29/76 ,  H01L29/772 ,  H01L29/78

公开(公告)号：JPS5818779B2

公开(公告)日：1983-04-14

申请号：JP10241874

申请日：1974-09-05

Applicant: SONY CORP

Inventor： ADACHI TOORU ,  HAYAFUJI TAKANORI ,  KAWATO SEIJI

IPC: H01L21/66 ,  G01R31/26

公开(公告)号：JPS567439A

公开(公告)日：1981-01-26

申请号：JP8321079

申请日：1979-06-29

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  AOKI YOSHIO ,  KAWATO SEIJI

IPC: H01L21/322 ,  H01L21/265 ,  H01L21/268

Abstract: PURPOSE:To prevent the generation of unnecessary thermal stress and pollution in a semiconductor element by a method wherein beams are locally irradiated only to fixed portions containing damaged regions and the portions are heated. CONSTITUTION:Laser beams, etc. are irradiated to inactive regions having no effect on characteristics on a semiconductor wafer or element, and grid damage is given to the regions. The damaged regions 2 and their near regions are locally heated by laser beams 4, whose area are larger than the regions 2. In this case, the damaged regions 2 heated have gettering action, and the heating regions 5 near the regions 2 are clarified by gettering. According to this method, the diameters of thermic ray beams 3, 4 can arbitrarily be adjusted, and treatment is easy. When an element is formed at an appropriate location of the heating regions 5 except the damaged regions 2, its characteristic is excellent.

公开(公告)号：JPS5373072A

公开(公告)日：1978-06-29

申请号：JP14955876

申请日：1976-12-13

Applicant: SONY CORP

Inventor： KAWATO SEIJI

IPC: H01L21/316

Abstract: PURPOSE:To form an oxidized film containing no impurity by contracting the defect inside a substrate through heat treatment after the formation an oxide containing halogen atoms on the semiconductor layer.

公开(公告)号：JPS5333569A

公开(公告)日：1978-03-29

申请号：JP10816876

申请日：1976-09-09

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI

IPC: H01L29/04 ,  H01L21/302 ,  H01L21/316 ,  H01L21/322

Abstract: PURPOSE:To let only the defects in a specific direction grow and reduce the lattice defects of single crystal by making use of the fact that the production density of stacking faults depends upon plane bearings.

公开(公告)号：JPS5242367A

公开(公告)日：1977-04-01

申请号：JP11814475

申请日：1975-09-30

Applicant: SONY CORP

Inventor： KAWATO SEIJI ,  HAYAFUJI TAKANORI ,  NIWANO CHIYUUICHI ,  SUZUKI TOSHIHIKO ,  SATOU HIROSHI

IPC: H01L21/322 ,  H01L21/324

Abstract: PURPOSE:To prevent occurence of crystal defects by heat treatment after causing strain to be produced in the rear of wafers.