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公开(公告)号：JP2010251360A
公开(公告)日：2010-11-04
申请号：JP2009095897
申请日：2009-04-10
Inventor： OHATA TOYOJI , TOMOTA KATSUHIRO , HIRAO NAOKI , DOI MASATO
CPC classification number: H01L25/0753 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/97 , H01L33/0079 , H01L33/62 , H01L2221/68354 , H01L2224/2919 , H01L2224/32225 , H01L2224/83005 , H01L2224/83192 , H01L2224/83855 , H01L2224/97 , H01L2924/12041 , H01L2224/83 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a display that achieves a display with excellent display image quality by dispersing a distribution of light-emission characteristics in the initial element arrangement while maintaining throughput by applying collective transfer for simultaneously transferring a plurality of elements. SOLUTION: In a first step, light-emitting elements S arranged at each predetermined number of light-emitting elements S formed and arranged on a first substrate 1 are collectively transferred to first transfer areas S1-1-S1-4 set on a second substrate 2. In a succeeding second step, light-emitting elements D remaining on the first substrate 1 are transferred to between the plurality of light-emitting elements S mounted on the second substrate 2 in at least either of a state, in which the first substrate 1 is moved, or a state, in which the first substrate is rotated in its plane, with respect to the first transfer areas S1-1-S1-4 on the second substrate 2. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 解决的问题：提供一种制造显示器的方法，其通过在初始元件布置中分散发光特性的分布来实现具有优异的显示图像质量的显示，同时通过应用集体传送来同时传送 多元素。 解决方案：在第一步骤中，布置在形成并布置在第一基板1上的每个预定数量的发光元件S的发光元件S被共同地传送到设置在第一传送区域S1-1-S1-4上 第二基板2.在接下来的第二步骤中，将保持在第一基板1上的发光元件D以至少任一状态转移到安装在第二基板2上的多个发光元件S之间，其中 第一基板1相对于第二基板2上的第一转印区域S1-1-S1-4移动，或第一基板在其平面中旋转的状态。（C） 2011年，JPO＆INPIT
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公开(公告)号：JP2008118161A
公开(公告)日：2008-05-22
申请号：JP2008016275
申请日：2008-01-28
Inventor： TOMOTA KATSUHIRO , DOI MASATO , WATANABE AKIHIKO , OHATA TOYOJI
CPC classification number: H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To simplify a manufacturing step where elements are transferred from a substrate with arrayed elements to another substrate.
SOLUTION: An element transferring method transfers elements arrayed on a first substrate 31 to a second substrate 34. The element transferring method includes a manufacturing step to form electric wiring 36 on the second substrate 34, a manufacturing step to form an adhering layer 35 on the electric wiring 36, and a manufacturing step to bury and insert elements 33a arrayed on the first substrate 31 in the adhering layer 35 until the elements 33a electrically connect to the electric wiring 36.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：为了简化元件从具有排列元件的基板转移到另一基板的制造步骤。 元件转印方法将排列在第一基板31上的元件传送到第二基板34.元件转印方法包括在第二基板34上形成电布线36的制造步骤，形成粘合层的制造步骤 35，并且在粘接层35中埋设并插入排列在第一基板31上的元件33a，直到元件33a与电线36电连接。制造步骤：（C）2008， JPO＆INPIT
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公开(公告)号：JP2006324680A
公开(公告)日：2006-11-30
申请号：JP2006159720
申请日：2006-06-08
Applicant: SONY CORP
Inventor： MORITA ETSUO , MURAKAMI YOSUKE , BIWA TSUYOSHI , OKUYAMA HIROYUKI , DOI MASATO , OHATA TOYOJI
IPC: H01L21/205 , C23C16/34 , C30B25/04 , H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a crystal film, crystal substrate, and semiconductor device which are low in a dislocation density, using a crystal base containing dislocation. SOLUTION: A crystal layer 23 is formed on one surface of a substrate 11 for growing a crystal via a buffer layer 12. In the crystal layer 23, at least part of the voids 23a, 23b configured by an amorphous material are formed at an end to which each dislocation D 1 extends from the lower part. Because the voids 23a, 23b prevent each dislocation D 1 from transmitting to the upper part, a crystal layer of a low dislocation density can be formed in the upper part. COPYRIGHT: (C)2007,JPO&INPIT
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公开(公告)号：JP2006313825A
公开(公告)日：2006-11-16
申请号：JP2005135892
申请日：2005-05-09
Inventor： DOI MASATO , OHATA TOYOJI , TOMOTA KATSUHIRO , WATANABE AKIHIKO
IPC: G02F1/13357 , G09F9/00 , H01L33/44 , H01L33/56
CPC classification number: G02F1/133603 , H01L2251/568
Abstract: PROBLEM TO BE SOLVED: To enable a part of a light emitting element which emits no light to be restored and to eliminate a dark point defect from a display device (e.g. a backlight of a display or a liquid crystal display device) through a process of arranging a restoring light emitting element capable of emitting light just above a light emitting light (out of light emitting elements) which emits no light.
SOLUTION: In the display device 1 where the light emitting elements 121 are mounted in an array, the restoring light emitting element 141 capable of emitting light is arranged just above a light emitting element 121N (out of light emitting elements 121) which emits no light.
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题：为了使得能够恢复不发光的发光元件的一部分被恢复，并且通过显示装置（例如显示器或液晶显示装置的背光源）通过 布置能够发出正好不发光的发光（发光元件外）的光的恢复发光元件的处理。 解决方案：在发光元件121以阵列的方式安装的显示装置1中，能够发光的恢复发光元件141布置在发光元件121N（发光元件121外）的正上方，发光元件121N 不发光 版权所有（C）2007，JPO＆INPIT
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45.发明专利Semiconductor light emitting element, method for manufacturing the same and image display device 有权半导体发光元件，其制造方法和图像显示装置
公开(公告)号：JP2006253725A
公开(公告)日：2006-09-21
申请号：JP2006162774
申请日：2006-06-12
Inventor： OKUYAMA HIROYUKI , DOI MASATO , BIWA TSUYOSHI , OHATA TOYOJI , KIKUTANI TOMOYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with high luminance by having excellent crystallinity, enabling the miniaturization of a chip structure, improving emission efficiency, and improving light extraction efficiency. SOLUTION: On a substrate 30, a crystal layer having an inclined crystal surface (for example, S surface) slanting to the main surface of the substrate 30 is formed. On the crystal layer, a first conduction type layer 33 extending in a surface parallel to the inclined crystal surface, an active layer 34, and a second conduction type layer 35 are formed. Then, one of electrodes extending in the surface parallel to the inclined crystal surface is formed. On the crystal surface of the crystal layer on the side of the substrate in which part of the active layer 34 and the second conduction type layer 35 is removed, the other electrode is formed while being electrically isolated from one of electrodes. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 解决问题：通过具有优异的结晶度来提供具有高亮度的半导体发光元件，能够使芯片结构小型化，提高发光效率，提高光提取效率。 解决方案：在基板30上形成倾斜的晶体表面（例如S表面）倾斜到基板30的主表面的晶体层。 在晶体层上，形成在平行于倾斜晶体表面的表面上延伸的第一导电类型层33，有源层34和第二导电类型层35。 然后，形成在平行于倾斜晶体表面的表面中延伸的电极之一。 在去除有源层34和第二导电型层35的一部分的衬底一侧的晶体层的晶体表面上形成另一个电极，同时与一个电极电隔离。 版权所有（C）2006，JPO＆NCIPI
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Patent Agency Ranking
公开(公告)号：JP2005284305A
公开(公告)日：2005-10-13
申请号：JP2005136513
申请日：2005-05-09
Inventor： OHATA TOYOJI , IWABUCHI TOSHIAKI , OBA HIROSHI
CPC classification number: H01L2224/24
Abstract: PROBLEM TO BE SOLVED: To easily obtain an image display device whose defective element can easily be repaired without any delicate and difficult operation.
SOLUTION: The method for manufacturing the image display device which has light emitting elements in matrix on a substrate so that pixels are composed of the respective light emitting elements 52 includes a 1st transfer stage of making a temporary holding member 51 hold the light emitting elements 52 by transferring the light emitting elements 52 at larger intervals than the array of the light emitting elements 52 on a 1st substrate 50 and a 2nd transfer stage of transferring the light emitting elements 52 held by the temporary holding members more apart on a 2nd substrate 55. The elements are thus arrayed more apart through those stages and mounted by being electrically connected to wires connected to a driving circuit; and then a defective light emitting element is detected and a light emitting element for repair is mounted at the position corresponding to the defective light emitting element.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：为了容易地获得其缺陷元件可以容易地被修复而没有任何微妙和困难的操作的图像显示装置。 解决方案：用于制造在基板上具有矩阵的发光元件以使像素由各个发光元件52组成的图像显示装置的方法包括：使第一转印阶段使临时保持构件51保持光 通过以比第一基板50上的发光元件52的阵列更大的间隔传送发光元件52和将由临时保持构件保持的发光元件52更多地分开的第二传送级在第二传送级 因此，这些元件在这些级上排列得比较分开，并且通过电连接到连接到驱动电路的导线来安装。 然后检测到有缺陷的发光元件，并且在与缺陷发光元件相对应的位置处安装用于修理的发光元件。 版权所有（C）2006，JPO＆NCIPI
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47.发明专利
公开(公告)号：JP2003168820A
公开(公告)日：2003-06-13
申请号：JP2001368468
申请日：2001-12-03
Applicant: SONY CORP
Inventor： DOI MASATO , IWABUCHI TOSHIAKI , OHATA TOYOJI
IPC: B23K26/073 , H01L21/20 , H01L21/762 , H01L33/32 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a method for stripping a crystal layer from a substrate without cracking the crystal layer formed on the substrate, a laser light irradiating method, and a method for fabricating an element using these methods. SOLUTION: In the method for stripping a crystal layer formed on a substrate by irradiating it with light, the crystal layer is irradiated linearly with light. The crystal layer can be stripped from the substrate without causing any crack by setting the irradiation width of light substantially equal to or narrower than the thickness of the crystal layer. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003163383A
公开(公告)日：2003-06-06
申请号：JP2001364865
申请日：2001-11-29
Applicant: SONY CORP
Inventor： OHATA TOYOJI
Abstract: PROBLEM TO BE SOLVED: To realize sure wiring by a small number of processes when semiconductor elements in a package are arranged at each resin package. SOLUTION: The method for manufacturing a semiconductor device comprises the steps of arranging the semiconductor elements 42 in the package 57 at each resin package 57 to constitute the device and forming an insulating film such as a resin layer 62 or the like on the package 57, pushing a mold 63 against the surface of a resin layer 62, forming recesses 64s, 64m and 64d on the surface of the layer 62, and then forming a metal thin film 70 for wirings by using the recesses 64s, 64m and 64d. COPYRIGHT: (C)2003,JPO
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49.发明专利
公开(公告)号：JP2003162229A
公开(公告)日：2003-06-06
申请号：JP2001361485
申请日：2001-11-27
Applicant: SONY CORP
Inventor： MINAMI MASARU , NATORI TAKEHISA , OHATA TOYOJI
Abstract: PROBLEM TO BE SOLVED: To provide an image display device having superior screen display quality and visibility, its manufacturing method and a filter for the device which is used to accomplish the above objectives. SOLUTION: An image display device filter 1 is arranged on the front of a display surface 11 of the image display device which is provided with light emitting diodes 17, 18 and 19 that have a plurality of light emitting colors. The filter 1 is provided with a light diffusing section 16 which is arranged on the front of the surface 11 of the device with a separation equivalent to a prescribed distance to diffuse the emitted light beams from the diodes 17, 18 and 19 and optically transmissive sections 2, 3 and 4 which are arranged on the front of the section 16 to pass the light beams of the wavelength range of the corresponding light emitting color among the plurality of light emitting colors and to intercept light beams having other wavelength ranges. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003124510A
公开(公告)日：2003-04-25
申请号：JP2001311031
申请日：2001-10-09
Applicant: SONY CORP
Inventor： BIWA TSUYOSHI , OKUYAMA HIROYUKI , DOI MASATO , OHATA TOYOJI
IPC: H01L21/205 , H01L33/06 , H01L33/32 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and a method for manufacturing the semiconductor light emitting element to prevent dispersion of impurities from conductive layers between which an active layer formed on an oblique crystal surface is nipped, enable prevention of deterioration of an active layer, and is excellent in light emission efficiency, in the semiconductor light emitting element where the active layer is formed on the surface parallel to the oblique crystal surface through selective growth, and to provide a method for manufacturing the semiconductor light emitting element. SOLUTION: In the active layer and the conductive layer formed in a surface parallel to the oblique crystal surface through selective growth, impurities dispersed from the conductive layer to the active layer can be shut off by an undoped crystal layer, and light emission efficiency can be improved by doping much impurities on the conductive layer. Further, a leak current generated at an interface between the active layer and the conductive layer can be prevented from generation, and deterioration of the active layer can be avoided.
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