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公开(公告)号：JP2003215498A
公开(公告)日：2003-07-30
申请号：JP2002016964
申请日：2002-01-25
Applicant: SONY CORP
Inventor： TODA ATSUSHI , AKAO HIROTAKA , ISHIMOTO HIKARI
Abstract: PROBLEM TO BE SOLVED: To provide a thin type display device which eliminates the tiredness of eyes and sense of discomfort and is suitable for displaying of stereoscopic image. SOLUTION: A waveguide substrate 1 is provided with a plurality of optical diffusion plates 2 capable of controlling opacity by voltage impression to the substrate in parallel therewith and these optical diffusion plates 2 are irradiated with a laser beam 14 emitted in a direction perpendicular to the substrate 1 from the substrate by an optical switch 8. Projection positions are changed in a depth direction by controlling the opacity of the respective diffusion plates 2. For example, polymer dispersion type liquid crystals are used as the diffusion plates 2 and, for example, ferroelectric liquid crystals are used as the optical switch 8. The diffusion plates 2 drive pixels like an active matrix by each of the pixels. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2002344047A
公开(公告)日：2002-11-29
申请号：JP2001150069
申请日：2001-05-18
Applicant: SONY CORP
Inventor： TODA ATSUSHI , ISHIBASHI AKIRA
Abstract: PROBLEM TO BE SOLVED: To provide a laser structure which is used over a wide application fields, small in size, light weight, and is manufactured with manufacturing process which is not so difficult, its applied units, and to provide a method of manufacturing the laser structure. SOLUTION: This laser structure has fine particles formed into a matrix, where the fine particles are periodically arranged, so as to be a face-centered cubic lattice structure or a closest packed cubic lattice structure; and the fine particles are arranged regularly to produce Bragg reflection, and luminescent material, such as color matter, organic electrochromic material or the like, is used as a laser medium to generate laser oscillation.
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公开(公告)号：JP2002328333A
公开(公告)日：2002-11-15
申请号：JP2001131213
申请日：2001-04-27
Applicant: SONY CORP
Inventor： TODA ATSUSHI , AKAO HIROTAKA , ARAI MICHIO
Abstract: PROBLEM TO BE SOLVED: To provide a display device with a mechanism where a binocular parallax performing a major function for stereoscopic vision of image can be easily taken and which contributes to high definition of image, and an image pickup and reproduction method most appropriate for the display device. SOLUTION: The display device is constituted of a two dimensional image display part 11 constituted by lining up a multiple number of light emitting picture elements in a two dimensional state and a wave front control part 12 installed facing the two dimensional image display part 11 and scanning a wave front control range 15 carrying out simultaneous wave front control of the display wave front from a two dimensional image display part 11 corresponding to the light emitting range of the multiple number of light emitting picture elements based on the depth information of the image information to be displayed.
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公开(公告)号：JP2001284641A
公开(公告)日：2001-10-12
申请号：JP2000101371
申请日：2000-03-31
Applicant: SONY CORP
Inventor： OKUYAMA HIROYUKI , TODA ATSUSHI , NAKAO ISAMU , SHIRAI KATSUYA , KOJIMA SHIGERU
Abstract: PROBLEM TO BE SOLVED: To provide an image display element for facilitating mounting and electrode wiring, improving production efficiency and displaying high quality images. SOLUTION: A substrate for crystal growth composed by successively crystal- growing the respective layers of a light emitting diode element provided with a multi-layer structure is divided and a bar-shaped body for which the plurality of light emitting diode elements are linearly arrayed is attained.
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公开(公告)号：JP2001282140A
公开(公告)日：2001-10-12
申请号：JP2000101271
申请日：2000-03-31
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , MATSUI ERIKO , AKAO HIROTAKA , TODA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To receive and display third sensation information, such as tactile sensation information and olfactory sense information in addition to visual sensation information and auditory sensation information. SOLUTION: The information on at least one remote effect sensation (visual sensation, auditory sensation and olfactory sense) and the information on at least one proximity effect sensation (tactile sensation and gustation) are received and are displayed on an information display surface. The information receiving display device is constituted by arraying a multiplicity of optical fibers 1 for image display having cores consisting of liquid and optical fibers 2 for tactile sensation and arraying a multiplicity of control signal lines 3 for image display consisting of piezoelectric elements and control signal lines 4 for tactile sensation. Ultrasonic waves are generated by the piezoelectric elements in the optical fibers 1 in the segments selected by the control signal lines 3 in accordance with image signals and air bubbles are generated in the cores by the cavitation by the ultrasonic waves. The laser beams introduced into the cores from the one end of the optical fibers 1 are scattered by the air bubbles and these beams are taken outside to make display, thereby display is performed. The ultrasonic waves are generated by the piezoelectric elements in the optical fibers 2 in the segments selected by the control signal lines 4 and projecting parts are formed on the surfaces of the fibers 1 by the pressure of the gas generated by the cavitation formed by the ultrasonic waves.
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Patent Agency Ranking
公开(公告)号：JP2000349333A
公开(公告)日：2000-12-15
申请号：JP20938399
申请日：1999-07-23
Applicant: SONY CORP
Inventor： KOJIMA SHIGERU , SHIRAI KATSUYA , MORI YOSHIFUMI , TODA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To improve light emitting efficiency, and to increase the variety of the selection of materials, and to obtain an element column with a large area. SOLUTION: An n type clad layer 12 made of an n type AlGaN non-single crystal body, a light emitting layer 13 containing plural fine crystals 13a made of ZnO, and a p type clad layer 14 made of p type BN non-single crystal body are successively laminated on a substrate 11 made of crystal glass. An insulating layer 15 is formed between the n type clad layer 12 and the p type clad layer 14 so that clearances between the fine crystals 13a can be filled so that leakage currents can be prevented. The insulating layer 15 is formed by oxidizing the surface of the n type clad layer 12. The light emitting layer 13 contains the plural fine crystals 13 whose crystallizability is improved so that the light emitting efficiency can be improved. Also, the variation of the selection of the materials of the light emitting layer 13, the n type clad layer 12, the p type clad layer 14, and the substrate 11 can be increased, and an element column with a large area can be formed.
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公开(公告)号：JPH10326944A
公开(公告)日：1998-12-08
申请号：JP36028297
申请日：1997-12-26
Applicant: SONY CORP
Inventor： TODA ATSUSHI , YANASHIMA KATSUNORI , ISHIBASHI AKIRA , TSUKAMOTO HIRONORI , NAKAYAMA NORIKAZU
IPC: H01L21/203 , H01L21/363 , H01L33/06 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S3/18 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To reduce the contact resistance of an electrode that is provided on II-VI compound semiconductor layer, by growing the II-VI compound semiconductor layer and then performing treatment in an atmosphere including at least nitrogen before forming the electrode. SOLUTION: An n-type GaAs substrate 1 where the growth of II-VI compound semiconductor layer is completed is retained on a susceptor 32, an RF coil 33 is energized and the n-type GaAs substrate 1 is heated to, for example, 330 deg.C, the temperature is retained for a desired amount of time, and then hydrogen annealing is made. In this case, the hydrogen annealing temperature is sat to a relatively high value of 330 deg.C to obtain an effect due to hydrogen annealing fully and at the same time to clean the surface of a p-type ZnSe contact layer due to a risk of contaminating the surface of the p-type ZnSe contact layer, since the n-type GaAs substrate 1 is exposed to atmosphere during transportation. After that, a p-type electrode or an n-type electrode is formed.
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公开(公告)号：JPH10200216A
公开(公告)日：1998-07-31
申请号：JP1447997
申请日：1997-01-12
Applicant: SONY CORP
Inventor： TODA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, and an optical disc device using it, wherein a carrier and light are better confined in an active layer. SOLUTION: On a substrate 1 of GaAs, an active layer 6 is formed with guide layers 5 and 7 formed on both sides. The guide layers 5 and 7 comprise the first guide layers 5a and 7a on the side of active layer 6 and the second guide layers 5b and 7b on the side of the first conductivity type clad layer 4 or the second conductivity type clad layer 8. The first guide layers 5a and 7a comprise, in order for a smaller band gap than the second guide layers 5b and 7b, ZnSe, and the second guide layers 5b and 7b comprise ZnS0.06 Se0.94 mixed crystal. The total thickness of the guide layers 5a and 7a is the critical film thickness (150nm) or less. Thus, crystalline is held high, so that a carrier and light are better confined in the active layer.
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49.发明专利
公开(公告)号：JPH08264903A
公开(公告)日：1996-10-11
申请号：JP8609195
申请日：1995-03-17
Applicant: SONY CORP
Inventor： KAWASUMI TAKAYUKI , IMANISHI DAISUKE , OKUYAMA HIROYUKI , TODA ATSUSHI , ISHIBASHI AKIRA
Abstract: PURPOSE: To provide a semiconductor light emitting element having a long service life by manufacturing a laminated semiconductor structure composed of II-VI compound semiconductors having excellent crystallinity. CONSTITUTION: At least one buffer layer, for example, an n-type GaAs buffer layer 42, n-type ZnSe buffer layer 43, etc., is grown on an n-type GaAs substrate 41 by using the metal organic chemical vapor phase growth method. Then the substrate 41 is moved to the vacuum vessel of a molecular beam epitaxial growth device from the reaction tube of the organometallic chemical vapor growth device through a vacuum carrying path and II-VI compound semiconductors are grown on the buffer layer.
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公开(公告)号：JPH08130188A
公开(公告)日：1996-05-21
申请号：JP29046194
申请日：1994-10-31
Applicant: SONY CORP
Inventor： IMANISHI DAISUKE , TODA ATSUSHI
IPC: H01L21/205 , H01L21/203 , H01L21/363 , H01L21/365
Abstract: PURPOSE: To increase carrier concentration by thermally treating a II-VI compound semiconductor at a specific temperature in a gas atmosphere containing a group II or group VI element having a highest vapor pressure in group II and group VI elements without coating the surface of the II-VI compound semiconductor with a protective film. CONSTITUTION: A semi-insulating GaAS substrate 9 is heated up to a growth temperature in an H2 gas atmosphere by a susceptor 7 in a reaction tube 6 for an organometallic chemical vapor growth device. The inside of the reaction tube 6 is supplied with DM (dimethyl) Zn, DMSe and Di-PNH (P-type dopant), and a N-doped ZnSe layer is grown on the substrate 8 in an epitaxial manner. A ZnSe:N layer is heated at 650-750 deg.C while the reaction tube 6 is supplied with DMSe containing Se having a vapor pressure higher than Zn with the ZnSe:N-layered substrate 8 left on the susceptor 7 for the reaction tube 6, that is, without forming a protective film, and annealed in a short time. Accordingly, carrier concentration can be increased.
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