公开(公告)号：JP2006319277A

公开(公告)日：2006-11-24

申请号：JP2005143019

申请日：2005-05-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OTOMO JUGO ,  OMAE AKIRA ,  YANASHIMA KATSUNORI

IPC: H01L33/06 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32 ,  H01L33/56

CPC classification number: H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting diode and a method for manufacturing the same in which emission efficiency is extremely high by improving light extraction efficiency and remarkably reducing an invalid current. SOLUTION: In a recess 11a of a sapphire substrate 11 to which rugged working is applied, an n-type GaN layer 12 is made to grow through a state that it has a triangular cross-sectional shape with a bottom surface as a base so as to fill up this recess 11a, and lateral growth is then performed from this n-type GaN layer 12 onto a protrusion 11b. Before occurrence of meeting of the n-type GaN layer 12, a dopant is switched to a p-type dopant and lateral growth is performed until perfect meeting of a p-type GaN layer 13. This p-type GaN layer 13 is used as a current constriction area. On the n-type GaN layer 12 and the p-type GaN layer 13; an n-type GaN layer 14, an active layer 15, a p-type AlGaN layer 16, and a p-type GaN layer 17 are made to grow to form a light-emitting diode structure. This GaN light-emitting diode is used to manufacture a light-emitting diode back light and the like. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决方案：通过提高光提取效率和显着降低无效电流，提供一种发光二极管及其制造方法，其中发光效率极高。 解决方案：在施加了坚固加工的蓝宝石衬底11的凹部11a中，使n型GaN层12通过具有三角形横截面形状的状态生长，其底面为 以填充该凹部11a，然后从该n型GaN层12进行横向生长到突起11b上。 在发生n型GaN层12的会聚之前，将掺杂剂切换为p型掺杂剂，并进行横向生长，直到p型GaN层13完全满足。该p型GaN层13用作 目前的收缩区域。 在n型GaN层12和p型GaN层13上; 使n型GaN层14，有源层15，p型AlGaN层16和p型GaN层17生长以形成发光二极管结构。 该GaN发光二极管用于制造发光二极管背光等。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006222224A

公开(公告)日：2006-08-24

申请号：JP2005033465

申请日：2005-02-09

Applicant: SONY CORP

Inventor： OKANO NOBUKATA ,  SHIOMI HARUNORI ,  AMI TAKAAKI ,  ARIMOCHI SUKEYUKI ,  KAZETAGAWA MUNEYUKI ,  OMAE AKIRA ,  YANASHIMA KATSUNORI ,  NARUI HIRONOBU

IPC: H01L33/32 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor capable of acquiring excellent characteristics even in the case of low temperature, and to provide a manufacturing method of a semiconductor device using it. SOLUTION: At the time of forming a nitride semiconductor 12 by using an MOCVD method, an MBE method or an MOMBE method, such a halogenated nitrogen gas as NF 3 is used as a material of nitrogen. Since the halogenated nitrogen gas has high decomposition efficiency even in low temperature of 800°C or less, nitrogen can sufficiently be supplied even if the temperature at the time of formation is made low. Therefore, excellent characteristics can be acquired without causing the shortage of nitrogen even at low temperature, at the time of forming such an object whose degradation due to heat is large as the nitride semiconductor 12 containing In. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：JP2005203247A

公开(公告)日：2005-07-28

申请号：JP2004008845

申请日：2004-01-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAZETAGAWA MUNEYUKI ,  OMAE AKIRA ,  YASUDA TOSHIKAZU ,  MEMESAWA SATOHIKO ,  YANASHIMA KATSUNORI

IPC: H01L51/50 ,  H05B33/10 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide an electroluminescent element or device capable of effectively displaying the function of a guest material without decreasing the film quality of a host material layer and enhancing luminous efficiency and to provide a manufacturing method capable of relatively easily manufacturing it.
SOLUTION: An organic electroluminescent element 100 has a luminous layer 104 formed by attaching or distributing particles 104b, 104d of the guest material discontinuously and a molecular state in host material layers 104a, 104c, and the attachment of the particles of the guest material is controlled by vapor deposition time.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决问题：提供能够有效显示客体材料的功能的电致发光元件或装置，而不会降低主体材料层的膜质量并提高发光效率并提供能够相对容易地制造的制造方法 它。 解决方案：有机电致发光元件100具有发光层104，其通过不连续地附着或分布客体材料的颗粒104b，104d和主体材料层104a，104c中的分子状态以及客体颗粒的附着而形成 材料由气相沉积时间控制。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005060767A

公开(公告)日：2005-03-10

申请号：JP2003291944

申请日：2003-08-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOJO TAKESHI ,  YANASHIMA KATSUNORI ,  MEMESAWA SATOHIKO ,  OMAE AKIRA

IPC: H05B33/10 ,  C23C14/24 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film-forming apparatus which does not require a large scale of apparatus configuration and easily controls a film-forming rate for an organic thin film to be formed on the surface of a substrate. SOLUTION: The thin-film-forming apparatus has a treatment chamber 11, a substrate holder 12 installed in the treatment chamber 11, a gas-supplying section 13 which is installed in the treatment chamber 11 and supplies a gas to a substrate-mounting face 12a of the substrate holder 12, a raw material vessel 14 which is installed in the gas-supplying section 13 and stores a raw material therein, and a carrier-gas-feeding pipe 15 for supplying a carrier gas to the raw material vessel 14, wherein the raw material vessel 14 has a gas diffusion opening 21 for diffusing a source gas and the carrier gas into the gas-supplying section 13, and the gas-supplying section 13 has the gas-supplying opening 22 which supplies the source gas together with the carrier gas to the substrate-mounting face 12a, and is placed in a staggered position with the gas diffusion opening 21. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种薄膜形成装置，其不需要大规模的装置构造，并且容易地控制要在基板的表面上形成的有机薄膜的成膜速率。 解决方案：薄膜形成装置具有处理室11，安装在处理室11中的基板保持件12，气体供给部13，其安装在处理室11中并将气体供给到基板 基板保持件12的安装面12a，安装在气体供给部13中并存储原料的原料容器14和用于向原料供给载气的载气供给管15 容器14，其中原料容器14具有用于将源气体和载气扩散到气体供给部13中的气体扩散开口21，气体供给部13具有供给源 气体与载气一起输送到基板安装面12a，并与气体扩散开口21放置在交错位置。（C）2005，JPO＆NCIPI

公开(公告)号：JP2005045292A

公开(公告)日：2005-02-17

申请号：JP2004327175

申请日：2004-11-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve a crystal property and electrical conductivity and also uniform the composition ratio and the p-type impurity concentration in a growth surface of a crystal. SOLUTION: First layers 11 of about 1 to 100 nm in thickness formed of AlGaN mixed crystal each and second layers 12 of about 1 to 100 nm in thickness formed of Mg doped p-type GaN each are stacked alternately to stack a plurality of layers. The first layers 11 and the second layers 12 that have aluminum contents and p-type impurity concentrations different from each other are formed in separate processes to enable fabricating a satisfactory p-type group III nitride compound semiconductor that has a property of p-type AlGaN mixed crystal as a whole. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提高晶体的晶体性质和导电性，并且在晶体的生长表面中的组成比和p型杂质浓度均匀。 解决方案：由AlGaN混合晶体形成的厚度为1至100nm的第一层11和由Mg掺杂的p型GaN形成的厚度为约1至100nm的厚度为约1至100nm的第一层12交替堆叠多个 的层。 在分开的工艺中形成具有彼此不同的铝含量和p型杂质浓度的第一层11和第二层12，以便能够制造具有p型AlGaN特性的令人满意的p型III族氮化物半导体 混合晶体作为一个整体。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004220852A

公开(公告)日：2004-08-05

申请号：JP2003004746

申请日：2003-01-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SASAKI KOJI ,  YANASHIMA KATSUNORI ,  NARUI HIRONOBU ,  MEMESAWA SATOHIKO ,  TANAKA SADAO

IPC: H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a film forming device in which the temperature of gases such as carrier gas or organic material containing gas, etc., is uniformly controlled to the desired temperature with good responsiveness and by which a high quality and uniform organic film is efficiently formed.
SOLUTION: In an organic film forming device 100, a heat exchanger 230 is provided in a pipe transporting carrier gas or gas containing organic material. A gas flow path 232 of the heat exchanger 230 is constituted to be in a bent non-curving shape which is not a smooth curving surface. Furthermore, heat exchanger balls 233 are densely contained in the gas flow path 232. Therefore, the gas flowing into the heat exchanger 230 is directly heated by being sequentially brought into contact with a gas flowing path forming member 231 which is heated by a heating member 234 and uniform heating without any unevenness is carried out. Furthermore, since the heat is efficiently transmitted, the responsiveness is improved. Thus, the gas can be properly controlled to the desired temperature and the high quality and uniform thin film of the desired material can be formed efficiently.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种成膜装置，其中诸如载气或含气体的有机材料等的气体的温度被均匀地控制到具有良好响应性的所需温度，并且通过该成膜装置具有高质量和 有效地形成均匀的有机膜。 解决方案：在有机膜形成装置100中，在输送运送载气或含有机材料的气体中设置热交换器230。 热交换器230的气体流路232构成为弯曲形状不弯曲的弯曲形状。 此外，热交换器球233密集地容纳在气体流路232中。因此，流入热交换器230的气体通过与气体流路形成部件231顺序地接触而被加热，加热部件 进行均匀加热而没有任何不均匀性。 此外，由于有效地传输热量，所以响应性提高。 因此，可以将气体适当地控制到期望的温度，并且可以有效地形成所需材料的高质量和均匀的薄膜。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2004186237A

公开(公告)日：2004-07-02

申请号：JP2002348743

申请日：2002-11-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SATO YASUO ,  ARAKIDA TAKAHIRO ,  HINO TOMOKIMI ,  NAGATAKE TAKESHI ,  YANASHIMA KATSUNORI

IPC: H01L31/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device including a less defect semiconductor crystal, and to provide its manufacturing method. SOLUTION: An In x1 Ga 1-x1 As layer is grown on a GaAs substrate 101 as a first layer buffer layer 102, which has lattice mismatch within a range keeping two dimensional growth for a base. At this time, the thickness of the In x1 Ga 1-x1 A s layer is set not to rapidly deteriorate the surface roughness of the film after grown by three-dimensional growth within a range where the growing layer can be grown two-dimensionally. To be concrete, the thickness is set to be ≥15 times and ≤50 times of the critical thickness of the In x1 Ga 1-x1 As layer. Buffer layers on and after a second layer are obtained by forming an In x Ga 1-x As layer having lattice mismatch within a range where it can grow two-dimensionally for an apparent lattice constant of a lower layer within a range of ≥15 times of the critical thickness and of ≤100 times of the same. Consequently, distortion of the crystal due to the lattice mismatch is sufficiently moderated to ensure a semiconductor crystal with less dislocation defect. COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种包括少缺陷半导体晶体的半导体器件，并提供其制造方法。 解决方案：在GaAs衬底101上生长作为第一层缓冲层102的As层 Ga 1-x1 层，其具有范围内的晶格失配 保持二维成长为基地。 此时，设置In x1 Ga 1-x1 A s 层的厚度不会使膜的表面粗糙度快速劣化 在生长层可以二维生长的范围内通过三维生长生长之后。 具体而言，厚度设定为In x1 Ga 1-x1 As层的临界厚度的≥15倍和≤50倍。 在第二层之上和之后的缓冲层是通过在其可以二维生长的范围内形成具有晶格失配的In xSaS＆lt; SB＆gt; 1-xS / 下层的表观晶格常数在临界厚度的≥15倍的范围内，≤100倍。 因此，由于晶格失配引起的晶体畸变得到充分调节，以确保具有较少位错缺陷的半导体晶体。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2004022400A

公开(公告)日：2004-01-22

申请号：JP2002177194

申请日：2002-06-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MEMESAWA SATOHIKO ,  NARUI HIRONOBU ,  YANASHIMA KATSUNORI ,  SASAKI KOJI

IPC: H05B33/10 ,  C23C14/12 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To supply an organic material being set to be a vapor-phase state onto the entire surface of a substrate whose position is fixed.
SOLUTION: The organic material 12 is vaporized or sublimated in a vaporization sublimation chamber 5 to generate a feed gas. A carrier gas is mixed into the feed gas and is transported to a film formation chamber 4 by a feed gas transportation pipe 6. A direction control plate 2 is provided at an injector 18 in the feed gas transportation pipe 6. The direction control plate 2 changes the flow of the feed gas toward the substrate 3 along the surface of the substrate 3, and forms a film by supplying the feed gas to the entire surface of the substrate 3, thus making uniform a film thickness distribution within the substrate 3 and forming an improved organic film.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004014311A

公开(公告)日：2004-01-15

申请号：JP2002166522

申请日：2002-06-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YANASHIMA KATSUNORI ,  NARUI HIRONOBU ,  MEMESAWA SATOHIKO ,  SASAKI KOJI

IPC: H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/14

CPC classification number: C23C14/243 ,  C23C14/12 ,  C23C14/228 ,  H01L51/001 ,  H01L51/56

Abstract: PROBLEM TO BE SOLVED: To provide a forming method of an organic thin film capable of forming the organic thin film having uniform film quality on a substrate surface without generating heat on the film forming surface.
SOLUTION: A gas (film forming constituent gas) g2 generated by vaporizing a single film forming constituent formed of an organic material is generated, and the gas g2 is carried and supplied into a processing chamber 11 with the substrate W housed. The organic material keeping the film forming constituent is deposited on the surface of the substrate W in the processing chamber 11 to form the organic thin film. When the organic material is deposited, the substrate W is previously cooled. The gas g2 is carried and supplied into the processing chamber 11 by using, for instance, an inert gas g1 or the like as a carrier gas. By repeating the deposition of the organic materials, the organic thin film comprising different film forming constituents can be stacked and formed.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003229634A

公开(公告)日：2003-08-15

申请号：JP2002027984

申请日：2002-02-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： TAMAMURA KOJI ,  YANASHIMA KATSUNORI ,  MOTOKI KENSAKU

IPC: H01S5/026 ,  H01S5/022 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide an optical integrated element utilizing the quality of a semiconductor substrate periodically having a high density fault region. SOLUTION: This optical integrated element 40 comprises a GaN semiconductor laser element 42 and a photodiode 44 integrated with the element 42. The element 42 has a laminated structure of an n-type GaN layer 14, an n-type AlGaN clad layer 16, an n-type GaN optical waveguide layer 18, an active layer 20 having a multiple quantum well structure, a p-type GaN optical waveguide layer 22, a p-type AlGaN clad layer 14, and a p-type GaN contact layer 26 on an n-type GaN substrate 12. A through hole 32 having a diameter of 50 μm is provided in a core 12a of the high density fault region of the substrate 12. The photodiode 44 is, for example, a surface light receiving type, and provided on the substrate 12 to block the hole 32 to photodetect the light leaked from the active region via the hole 32. The photodiode 44 photodetects the light leaked through the hole 32, measures a light output intensity and outputs a control signal of the element 42. COPYRIGHT: (C)2003,JPO