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    PRESSURE-INVARIANT TRACE GAS DETECTION
    42.
    发明专利
    PRESSURE-INVARIANT TRACE GAS DETECTION 未知

    公开(公告)号：CA2680798C

    公开(公告)日：2017-05-02

    申请号：CA2680798

    申请日：2008-03-14

    Applicant: SPECTRASENSORS INC

    Inventor： XIANG LIU ,  ZHOU XIN ,  FEITISCH ALFRED ,  SANGER GREGORY M

    IPC: G01J3/433

    Abstract: An apparatus for detecting a concentration of a trace target gas in a sample gas comprises a light source (110), for example a tunable diode laser, for emitting light at a wavelength corresponding to an absorption line of the target gas and means (105) operatively connected to said light source for modulating the wavelength of the emitted light, a detector (125) positioned to detect the intensity of light emitted from the light source that has passed through the sample gas at a multiple of the modulation frequency of the light source, for example second harmonic detection, a pressure sensor (120) for detecting the pressure of the sample gas, and a control unit (135) coupled to the detector, the pressure sensor, and the light source, said control unit being arranged to adjust the modulation amplitude' of the light source based on the detected pressure.

    SEMICONDUCTOR LASER MOUNTING FOR IMPROVED FREQUENCY STABILITY
    44.
    发明专利
    SEMICONDUCTOR LASER MOUNTING FOR IMPROVED FREQUENCY STABILITY 未知

    公开(公告)号：AU2015202533B2

    公开(公告)日：2016-09-01

    申请号：AU2015202533

    申请日：2015-05-11

    Applicant: SPECTRASENSORS INC

    Inventor： NEUBAUER GABI ,  FEITISCH ALFRED ,  SCHREMPEL MATHIAS

    IPC: H01S5/042 ,  H01S5/022

    Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

    COLLISIONAL BROADENING COMPENSATION USING REAL OR NEAR REAL TIME VALIDATION IN SPECTROSCOPIC ANALYZERS
    46.
    发明专利
    COLLISIONAL BROADENING COMPENSATION USING REAL OR NEAR REAL TIME VALIDATION IN SPECTROSCOPIC ANALYZERS 未知

    公开(公告)号：IN2008MUN2014A

    公开(公告)日：2015-08-07

    申请号：IN2008MUN2014

    申请日：2014-10-10

    Applicant: SPECTRASENSORS INC

    Inventor： FEITISCH ALFRED ,  LIU XIANG ,  HUANG HSU HUNG ,  JI WENHAI ,  CLINE RICHARD L

    IPC: G01N21/35

    Abstract: Validation verification data quantifying an intensity of light reaching a detector of a spectrometer from a light source of the spectrometer after the light passes through a validation gas across a known path length can be collected or received. The validation gas can include an amount of an analyte compound and an undisturbed background composition that is representative of a sample gas background composition of a sample gas to be analyzed using a spectrometer. The sample gas background composition can include one or more background components. The validation verification data can be compared with stored calibration data for the spectrometer to calculate a concentration adjustment factor and sample measurement data collected with the spectrometer can be modified using this adjustment factor to compensate for collisional broadening of a spectral peak of the analyte compound by the background components. Related methods articles of manufacture systems and the like are described.

    Dynamic reconstruction of a calibration state of an absorption spectrometer
    47.
    发明专利
    Dynamic reconstruction of a calibration state of an absorption spectrometer 未知

    公开(公告)号：AU2011316820B2

    公开(公告)日：2015-07-23

    申请号：AU2011316820

    申请日：2011-10-21

    Applicant: SPECTRASENSORS INC

    Inventor： LIU XIANG ,  LEWISON JOHN ,  JI WENHAI ,  FEITISCH ALFRED

    IPC: G01N21/35 ,  G01N21/31 ,  G01N21/39 ,  G01N21/61

    Abstract: A reference harmonic absorption curve of a laser absorption spectrometer, which can include a tunable or scannable laser light source and a detector, can have a reference curve shape and can include a first, second, or higher order harmonic signal of a reference signal generated by the detector in response to light passing from the laser light source through a reference gas or gas mixture. The reference gas or gas mixture can include one or more of a target analyte and a background gas expected to be present during analysis of the target analyte. The reference harmonic absorption curve can have been determined for the laser absorption spectrometer in a known or calibrated state. A test harmonic absorption curve having a test curve shape is compared with the reference harmonic absorption curve to detect a difference between the test curve shape and the reference curve shape that exceeds a predefined allowed deviation and therefore indicates a change in an output of the laser light source relative to the known or calibrated state. One or more operating and/or analytical parameters of the laser absorption spectrometer are adjusted to correct the test curve shape to reduce the difference between the test curve shape and the reference curve shape.

    COLLISIONAL BROADENING COMPENSATION USING REAL OR NEAR-REAL TIME VALIDATION IN SPECTROSCOPIC ANALYZERS
    49.
    发明专利
    COLLISIONAL BROADENING COMPENSATION USING REAL OR NEAR-REAL TIME VALIDATION IN SPECTROSCOPIC ANALYZERS 未知

    公开(公告)号：CA2865649A1

    公开(公告)日：2013-09-26

    申请号：CA2865649

    申请日：2013-03-21

    Applicant: SPECTRASENSORS INC

    Inventor： FEITISCH ALFRED ,  LIU XIANG ,  HUANG HSU-HUNG ,  JI WENHAI ,  CLINE RICHARD L

    IPC: G01N21/35

    Abstract: Validation verification data quantifying an intensity of light reaching a detector of a spectrometer from a light source of the spectrometer after the light passes through a validation gas across a known path length can be collected or received. The validation gas can include an amount of an analyte compound and an undisturbed background composition that is representative of a sample gas background composition of a sample gas to be analyzed using a spectrometer. The sample gas background composition can include one or more background components. The validation verification data can be compared with stored calibration data for the spectrometer to calculate a concentration adjustment factor, and sample measurement data collected with the spectrometer can be modified using this adjustment factor to compensate for collisional broadening of a spectral peak of the analyte compound by the background components. Related methods, articles of manufacture, systems, and the like are described.

    SEMICONDUCTOR LASER MOUNTING WITH INTACT DIFFUSION BARRIER LAYER
    50.
    发明专利
    SEMICONDUCTOR LASER MOUNTING WITH INTACT DIFFUSION BARRIER LAYER 未知

    公开(公告)号：CA2844789A1

    公开(公告)日：2013-02-21

    申请号：CA2844789

    申请日：2012-08-14

    Applicant: SPECTRASENSORS INC

    Inventor： SCHREMPEL MATHIAS ,  FEITISCH ALFRED ,  NEUBAUER GABI

    IPC: H01S5/022 ,  H01L23/485 ,  H01S5/042

    Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride

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