公开(公告)号：EP0886264B1

公开(公告)日：2001-02-07

申请号：EP97830291.7

申请日：1997-06-19

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G11B5/55 ,  G11B20/10

CPC classification number: G11B21/12 ,  G11B5/5552 ,  G11B5/5582 ,  G11B21/24

公开(公告)号：EP0975085A1

公开(公告)日：2000-01-26

申请号：EP98830446.5

申请日：1998-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: H02N1/00 ,  G11B21/02

CPC classification number: H02N1/004 ,  G11B21/02

Abstract: An electrostatic transport structure (25) is formed by a plurality of concentric conductive regions (26a, 26b, 26c) to which biasing pulse trains (V1, V2, V3) are supplied. Each biased conductive region generates an electric field attracting any dielectric particles. The pulse trains supplied to immediately adjacent conductive regions are phase-shifted of a predetermined time and in a direction linked to the desired direction of movement for the electrostatic particles. Voltage pulses are sent to each conductive region delayed with respect to voltage pulses sent to an immediately preceding conductive region in the direction of desired movement and advanced with respect the voltage pulses sent to an immediately successive conductive region.

Abstract translation: 静电传输结构（25）由导电同心区域（26A，26B，26C），以哪个偏压脉冲串（V1，V2，V3）的供给的多个形成。 电场的每个偏压导电区基因率吸引任何介电粒子。 脉冲序列提供至立即相邻的导电区域被相移的规定的时间和在链接到运动的用于静电粒子所需的方向的方向。 电压脉冲被发送到发送到立即preceding-导电区域中移动的方向和期望的高级相对于传送到在立即连续导电区域内的电压脉冲相对于电压脉冲延迟每个导电区域。

公开(公告)号：EP0892390A1

公开(公告)日：1999-01-20

申请号：EP97830369.1

申请日：1997-07-18

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G11B5/265 ,  G11B5/31 ,  G11B5/33 ,  G11B5/39 ,  G11B5/55 ,  G11B5/48 ,  G11B5/596

CPC classification number: G11B5/3922 ,  G11B5/2654 ,  G11B5/3103 ,  G11B5/3183 ,  G11B5/3948 ,  G11B5/3958 ,  G11B5/4886 ,  G11B5/5526 ,  G11B5/553

Abstract: A head (130) for a disk storage device having a plurality of tracks (117) divided into memory cells (234) comprises means (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) in succession, the means (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) including at least two partial reading means (206a, 230a, 250a; 206b, 230b, 250b) each for reading a portion (234a; 234b) of each memory cell (234), the portions (234a; 234b) being arranged transversely relative to the longitudinal axis (233) of the corresponding track (117).

Abstract translation: 一种用于具有划分为存储单元（234）的多个磁道（117）的磁盘存储装置的磁头（130），包括用于依次读取存储单元（234）的装置（205,230a，230b，250a，250b） 用于读取包括至少两个部分读取装置（206a，230a，250a; 206b，230b，250b）的存储单元（234）的装置（205,230a，230b，250a，250b），每个部分读取装置用于读取部分（234a; 234b） 每个存储单元（234）的部分（234a; 234b）相对于对应轨道（117）的纵向轴线（233）横向布置。