公开(公告)号：US20170369335A1

公开(公告)日：2017-12-28

申请号：US15662687

申请日：2017-07-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Saulius Smetona ,  Timothy James Bettles ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: C02F1/32

CPC classification number: C02F1/325 ,  C02F2201/3221 ,  C02F2201/3222 ,  C02F2201/328 ,  C02F2303/04

Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.

公开(公告)号：US20170368215A1

公开(公告)日：2017-12-28

申请号：US15700533

申请日：2017-09-11

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Timothy James Bettles ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Michael Shur

IPC: A61L2/10 ,  F25D17/04 ,  G01N27/12

CPC classification number: A61L2/10 ,  A61L2202/14 ,  A61L2202/21 ,  F25D17/042 ,  F25D2317/0417 ,  G01G19/52 ,  G01N27/121 ,  H04N5/332 ,  H04N7/183

Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

公开(公告)号：US20170345968A1

公开(公告)日：2017-11-30

申请号：US15662675

申请日：2017-07-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Wenhong Sun ,  Alexander Dobrinsky ,  Maxim S. Shatalov ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/06 ,  H01L33/00 ,  H01L21/02 ,  H01L33/04

CPC classification number: H01L33/06 ,  H01L21/02389 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/04

Abstract: A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. One or more of the barriers and/or quantum wells includes a fine structure region. The fine structure region includes a plurality of subscale features arranged in at least one of: a growth or a lateral direction.

公开(公告)号：US20170318632A1

公开(公告)日：2017-11-02

申请号：US15492351

申请日：2017-04-20

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H05B33/08 ,  H01L25/16 ,  H01L33/60

CPC classification number: H05B33/0809 ,  H01L25/167 ,  H01L33/60 ,  H05B33/0845

Abstract: A solid-state light source (SSLS) with an integrated electronic modulator is described. A device can include a SSLS having an active p-n junction region is formed within the SSLS for electron-hole pair recombination and light emission. the active p-n junction region can include a n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A pair of current supply electrodes can be formed to receive a drive current from a current supply source that drives the SSLS. A field-effect transistor (FET) modulator can be monolithically integrated with the SSLS for modulation thereof. The FET modulator can receive a modulation voltage from a modulation voltage source. The modulation voltage includes voltage pulses having a pulse amplitude and polarity to turn on and off current flowing through the FET modulator. These voltage pulses enable the FET modulator to control the drive current supplied to the SSLS.

公开(公告)号：US09802840B2

公开(公告)日：2017-10-31

申请号：US14324528

申请日：2014-07-07

Applicant: Sensor Electronic Technology, Inc.

Inventor： Igor Shturm ,  Saulius Smetona ,  Timothy James Bettles ,  Yuri Bilenko ,  Ignas Gaska ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: C02F1/00 ,  C02F1/32 ,  C02F9/00 ,  G01N21/33 ,  G01N21/85 ,  G01N21/94

CPC classification number: C02F1/325 ,  C02F1/001 ,  C02F2201/3222 ,  C02F2201/3226 ,  C02F2201/3227 ,  C02F2201/3228 ,  C02F2201/326 ,  C02F2201/328 ,  C02F2209/001 ,  C02F2209/005 ,  C02F2209/05 ,  C02F2209/11 ,  C02F2209/40 ,  C02F2303/04 ,  G01N21/33 ,  G01N21/85 ,  G01N21/94

Abstract: A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.

公开(公告)号：US09793367B2

公开(公告)日：2017-10-17

申请号：US14955504

申请日：2015-12-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Michael Shur

IPC: H01L29/45 ,  H01L33/38 ,  H01L33/40 ,  H01L21/285 ,  H01L29/15 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.

公开(公告)号：US20170290937A1

公开(公告)日：2017-10-12

申请号：US15633118

申请日：2017-06-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10 ,  A43B17/10 ,  A43B1/00 ,  A43B3/00

CPC classification number: A61L2/10 ,  A43B1/0045 ,  A43B3/001 ,  A43B17/10 ,  A61L2202/14

Abstract: An ultraviolet (UV) footwear illuminator for footwear treatment is disclosed. In one embodiment, the UV footwear illuminator includes an insert adapted for placement in an article of footwear. At least one UV radiation source is located in the insert and is configured to emit UV radiation in the footwear through a transparent window region formed in the insert. A control unit is configured to control at least one predetermined UV radiation characteristics associated with the radiation emitted from each UV radiation source. A power supply is configured to power each UV radiation source and the control unit.

公开(公告)号：US20170287698A1

公开(公告)日：2017-10-05

申请号：US15633141

申请日：2017-06-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L21/02 ,  H01L33/12 ,  H01L33/32 ,  H01L33/14 ,  H01L33/06 ,  C30B25/04 ,  H01L33/10 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  C30B29/40 ,  C30B25/18 ,  H01L33/22 ,  H01L33/40

CPC classification number: H01L33/12 ,  C30B25/04 ,  C30B25/183 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/518 ,  H01L29/7786 ,  H01L29/7787 ,  H01L33/06 ,  H01L33/10 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0091

Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-Ill nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.

公开(公告)号：US09741802B2

公开(公告)日：2017-08-22

申请号：US14979915

申请日：2015-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/66 ,  H01L29/40 ,  G06F17/50 ,  H01L29/778 ,  H01L29/872 ,  H01L29/20

CPC classification number: H01L29/408 ,  G06F17/5068 ,  G06F17/5072 ,  G06F2217/02 ,  G06F2217/78 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/7786 ,  H01L29/872

Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film or a low conductive film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film or the low conductive film. The conducting elements can vary in at least one of composition, doping, conductivity, size, thickness, shape, and distance from the device channel along a lateral length of the insulating film or the low conductive film, or in a direction that is perpendicular to the lateral length.

公开(公告)号：US20170229610A1

公开(公告)日：2017-08-10

申请号：US15495169

申请日：2017-04-24

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/15 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/145 ,  H01L33/32 ,  H01L33/325 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/34333

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).