公开(公告)号：US10151031B2

公开(公告)日：2018-12-11

申请号：US15617102

申请日：2017-06-08

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Jun Sato ,  Masahiro Murata ,  Kentaro Oshimo ,  Tomoko Sugano ,  Shigehiro Miura

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  C23C16/507 ,  C23C16/52

Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

公开(公告)号：US20180308688A1

公开(公告)日：2018-10-25

申请号：US15956410

申请日：2018-04-18

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A film deposition method is provided. In the method, an aminosilane gas is adsorbed on a surface of a substrate including a recess pattern. Next, a silicon oxide film is deposited on the surface of the substrate including the recess pattern by oxidizing the aminosilane gas adsorbed on the surface of the substrate using an oxidation gas. Then, the silicon oxide film is modified by supplying a mixed gas containing oxygen, argon and nitrogen to the silicon oxide film while activating the mixed gas by plasma.

公开(公告)号：US09777369B2

公开(公告)日：2017-10-03

申请号：US14303763

申请日：2014-06-13

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Masahiro Murata ,  Kentaro Oshimo ,  Shigehiro Miura

IPC: C23C16/00 ,  C23C16/34 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/45536 ,  C23C16/45557 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/32816

Abstract: A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.

公开(公告)号：US09677174B2

公开(公告)日：2017-06-13

申请号：US14511226

申请日：2014-10-10

Applicant: Tokyo Electron Limited

Inventor： Takeshi Kumagai ,  Hitoshi Kato

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/458

CPC classification number: C23C16/4554 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584

Abstract: A film deposition method includes placing a substrate in a substrate receiving portion of a table provided in a vacuum chamber; and performing, at least once, a film deposition-alteration step and an alteration step. The film deposition-alteration step includes an adsorption step of allowing a first reaction gas to be adsorbed on an upper surface, a reaction product production step of allowing a second reaction gas and the first reaction gas adsorbed on the upper surface to react each other, thereby producing a reaction product, and an alteration process of allowing the upper surface to be exposed to plasma into which an alteration gas is activated. The first reaction gas is supplied from the first reaction gas supplying portion, the second reaction gas is supplied from the second reaction gas supplying portion, and the alteration is supplied from the plasma.

公开(公告)号：US09153433B2

公开(公告)日：2015-10-06

申请号：US14054932

申请日：2013-10-16

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Keiichi Tanaka ,  Hiroyuki Kikuchi

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  C23C16/24 ,  C23C16/455

CPC classification number: H01L21/02532 ,  C23C16/24 ,  C23C16/45527 ,  C23C16/45551 ,  H01L21/02381 ,  H01L21/0262

Abstract: A disclosed method of depositing a silicon film on a substrate mounted on a turntable and can pass by rotation through a first process area and a second process area, which are separately arranged along a peripheral direction in a cylindrical chamber set to have a first temperature capable of cutting a Si—H bond includes a molecular layer deposition step of supplying a Si2H6 gas set to have a second temperature less than the first temperature when the substrate passes through the first process area thereby forming a SiH3 molecular layer on a surface of the substrate, and a hydrogen desorption step of causing the substrate, on a surface of which the SiH3 molecular layer is formed, to pass through the second process area maintained to have the first temperature thereby cutting the Si—H bond and leaving only a silicon atomic layer on the surface of the substrate.

Abstract translation: 一种公开的将硅膜沉积在安装在转台上的基板上的方法，并且可以旋转地穿过第一处理区域和第二处理区域，该第一处理区域和第二处理区域沿圆周方向分开设置，该圆柱形室被设置为具有第一温度能力 切割Si-H键包括分子层沉积步骤，当基底通过第一处理区域时，提供Si2H6气体组合以具有小于第一温度的第二温度，从而在衬底的表面上形成SiH 3分子层 以及氢解吸步骤，使其表面上形成有SiH 3分子层的基板通过保持第一温度的第二工艺区域，从而切割Si-H键并仅留下硅原子层 在基板的表面上。

公开(公告)号：US08853100B2

公开(公告)日：2014-10-07

申请号：US13930667

申请日：2013-06-28

Applicant: Tokyo Electron Limited

Inventor： Masanobu Igeta ,  Jun Sato ,  Kazuo Yabe ,  Hitoshi Kato ,  Yusaku Izawa

IPC: H01L21/31 ,  B05D5/06 ,  C23C20/00 ,  C23C16/06 ,  C23C16/00

CPC classification number: H01L21/0228 ,  C23C16/303 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45551 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/0337 ,  H01L21/31144 ,  H01L29/66795 ,  H01L29/7843

Abstract: According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.

Abstract translation: 根据本公开的实施例，提供了一种成膜方法。 成膜方法包括：在旋转转盘并旋转基板的同时，将作为源极气体的第一处理气体作为源极气体供给，并且供给第二处理气体作为用于氮化吸附于基板的第一处理气体的气体 在从第一处理气体被供给到基板的位置沿着转盘的圆周方向间隔开的位置到基板。 此外，成膜方法包括在第一处理气体供给位置和第二处理气体供给位置之间沿着转台的圆周方向设置分离区域，并且在形成在基板上的反应产物的分子层上照射紫外线 在转盘上控制在薄膜中产生的应力。

公开(公告)号：US20140220260A1

公开(公告)日：2014-08-07

申请号：US14171928

申请日：2014-02-04

Applicant: Tokyo Electron Limited

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC: C23C16/50

CPC classification number: C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733

Abstract: A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.

Abstract translation: 用于在真空室内进行等离子体处理的基板处理装置包括转盘，其包括基板安装部，用于沿着真空室的周向形成的基板，以对其进行轨道旋转; 等离子体产生气体供应部分，其将等离子体产生气体供应到等离子体产生区域中; 向所述等离子体发生气体供给能量以将所述等离子体产生气体变更为等离子体的能量供给部; 偏置电极，设置在转台的下侧以面对等离子体产生区域，并将等离子体中的离子引导到晶片的表面上; 以及将真空室抽出的排气口，其中偏置电极从转台的旋转中心延伸到外缘侧，偏置电极的旋转方向的宽度小于相邻的基板安装部之间的距离。

公开(公告)号：US20140213068A1

公开(公告)日：2014-07-31

申请号：US14243977

申请日：2014-04-03

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Manabu Honma ,  Yasushi Takeuchi

IPC: H01L21/02 ,  H01L21/677

CPC classification number: H01L21/0228 ,  C23C16/45544 ,  C23C16/45548 ,  C23C16/45557 ,  C23C16/45563 ,  C23C16/45591 ,  C23C16/4585 ,  H01L21/67706

Abstract: A film deposition apparatus includes a separation member that extends to cover a rotation center of the turntable and two different points on a circumference of the turntable above the turntable, thereby separating the inside of the chamber into a first area and a second area; a first reaction gas supplying portion that supplies a first reaction gas toward the turntable in the first area; a second reaction gas supplying portion that supplies a second reaction gas toward the turntable in the second area; a first evacuation port that evacuates the first reaction gas and the first separation gas that converges with the first reaction gas; and a second evacuation port that evacuates the second reaction gas and the first separation gas that converges with the second reaction gas. The separation member has a bent portion that substantially fills in a gap between the turntable and the chamber.

Abstract translation: 一种成膜装置，包括：分离部件，该分离部件延伸以覆盖转台的旋转中心，并且在转盘上方的转盘的圆周上的两个不同点，从而将腔室的内部分离成第一区域和第二区域; 第一反应气体供给部，其向第一区域内的转台供给第一反应气体; 第二反应气体供给部，其向第二区域的转台供给第二反应气体; 排出第一反应气体和与第一反应气体会聚的第一分离气体的第一排气口; 以及抽出第二反应气体和与第二反应气体会聚的第一分离气体的第二排气口。 分离构件具有基本上填充在转盘和腔室之间的间隙的弯曲部分。

公开(公告)号：US20140017905A1

公开(公告)日：2014-01-16

申请号：US13936523

申请日：2013-07-08

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Shigehiro Miura

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45508 ,  C23C16/45551 ,  C23C16/45587 ,  C23C16/4584

Abstract: A film deposition apparatus that laminates layers of reaction product by repeating cycles of sequentially supplying process gases that mutually reacts in a vacuum atmosphere includes a turntable receiving a substrate, process gas supplying portions supplying mutually different process gases to separated areas arranged in peripheral directions, and a separation gas supplying portion separating the process gases, wherein at least one process gas supplying portion extends between peripheral and central portions of the turntable and includes a gas nozzle discharging one process gas toward the turntable and a current plate provided on an upstream side to allow the separation gas to flow onto its upper surface, wherein a gap between the current plate and the turntable is gradually decreased from a central side of the turntable to a peripheral side of the turntable, and the gap is smaller on the peripheral side by 1 mm or greater.

Abstract translation: 一种成膜装置，其通过重复连续地供给在真空气氛中相互反应的处理气体的循环来层叠反应产物层，包括：接收基板的转台，向周向排列的分离区域供给相互不同的处理气体的处理气体供给部;以及 分离工艺气体的分离气体供给部分，其中至少一个工艺气体供应部分在转盘的周边部分和中心部分之间延伸，并且包括将一个工艺气体朝向转盘排出的气体喷嘴和设置在上游侧的电流板，以允许 分离气体流向其上表面，其中当前板和转盘之间的间隙从转台的中心侧逐渐减小到转盘的周边，并且周边侧的间隙较小 或更大。

公开(公告)号：US11710633B2

公开(公告)日：2023-07-25

申请号：US17155551

申请日：2021-01-22

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/56 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  C23C16/24

CPC classification number: H01L21/02532 ,  C23C16/24 ,  C23C16/4584 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02645 ,  H01L21/3065

Abstract: A method of depositing a silicon film on a recess formed in a surface of a substrate is provided. The substrate is placed on a rotary table in a vacuum vessel, so as to pass through first, second, and third processing regions in the vacuum vessel. An interior of the vacuum vessel is set to a first temperature capable of breaking an Si—H bond. In the first processing region, Si2H6 gas having a temperature less than the first temperature is supplied to form an SiH3 molecular layer on its surface. In the second processing region, a silicon atomic layer is exposed on the surface of the substrate, by breaking the Si—H bond in the SiH3 molecular layer. In the third processing region, by anisotropic etching, the silicon atomic layer on an upper portion of an inner wall of the recess is selectively removed.