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    Method of forming semiconductor device
    42.
    发明授权
    Method of forming semiconductor device 有权
    半导体器件形成方法

    公开(公告)号：US09263294B2

    公开(公告)日：2016-02-16

    申请号：US14273283

    申请日：2014-05-08

    Applicant: United Microelectronics Corp.

    Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang ,  Chieh-Te Chen ,  Cheng-Hsing Chuang

    IPC: H01L21/4763 ,  H01L21/311

    CPC classification number: H01L21/31111 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76897

    Abstract: A method of forming a semiconductor device is provided. A material layer, a first flowing material layer and a first mask layer are sequentially formed on a substrate. A first etching process is performed by using the first mask layer as a mask, so as to form a first opening in the material layer. The first mask layer and the first flowing material layer are removed. A filler layer is formed in the first opening. A second flowing material layer is formed on the material layer and the filler layer. A second mask layer is formed on the second flowing material layer. A second etching process is performed by using the second mask layer as a mask, so as to form a second opening in the material layer.

    Abstract translation: 提供一种形成半导体器件的方法。 在基板上依次形成材料层，第一流动材料层和第一掩模层。 通过使用第一掩模层作为掩模来进行第一蚀刻工艺，以在材料层中形成第一开口。 去除第一掩模层和第一流动材料层。 在第一开口中形成填充层。 在材料层和填料层上形成第二流动材料层。 在第二流动材料层上形成第二掩模层。 通过使用第二掩模层作为掩模来进行第二蚀刻处理，以在材料层中形成第二开口。

    METAL GATE STRUCTURE
    43.
    发明申请
    METAL GATE STRUCTURE 有权
    金属门结构

    公开(公告)号：US20160027892A1

    公开(公告)日：2016-01-28

    申请号：US14852624

    申请日：2015-09-13

    Applicant: United Microelectronics Corp.

    Inventor： Ching-Ling Lin ,  Chih-Sen Huang ,  Shih-Fang Tzou ,  Chien-Ting Lin ,  Yi-Wei Chen ,  Shi-Xiong Lin ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang ,  Hsiao-Pang Chou ,  Chia-Lin Lu

    IPC: H01L29/49 ,  H01L29/423 ,  H01L27/088

    CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/823456 ,  H01L21/82385 ,  H01L27/088 ,  H01L29/4232 ,  H01L29/517 ,  H01L29/66545

    Abstract: The metal gate structure includes at least a substrate, a dielectric layer, first and second trenches, first metal layer and second metal layers, and two cap layers. In particular, the dielectric layer is disposed on the substrate, and the first and second trenches are disposed in the dielectric layer. The width of the first trench is less than the width of the second trench. The first and second metal layers are respectively disposed in the first trench and the second trench, and the height of the first metal layer is less than or equal to the height of the second metal layer. The cap layers are respectively disposed in a top surface of the first metal layer and a top surface of the second metal layer.

    Abstract translation: 金属栅极结构至少包括衬底，电介质层，第一和第二沟槽，第一金属层和第二金属层以及两个盖层。 特别地，介电层设置在基板上，并且第一和第二沟槽设置在电介质层中。 第一沟槽的宽度小于第二沟槽的宽度。 第一和第二金属层分别设置在第一沟槽和第二沟槽中，第一金属层的高度小于或等于第二金属层的高度。 盖层分别设置在第一金属层的顶表面和第二金属层的顶表面中。

    Method of forming contact hole and semiconductor structure with contact plug
    44.
    发明授权
    Method of forming contact hole and semiconductor structure with contact plug 有权
    用接触塞形成接触孔和半导体结构的方法

    公开(公告)号：US09214392B1

    公开(公告)日：2015-12-15

    申请号：US14527778

    申请日：2014-10-30

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang

    IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/768 ,  H01L23/535 ,  H01L23/532 ,  H01L21/311

    CPC classification number: H01L21/823475 ,  H01L21/76832 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823437 ,  H01L23/485 ,  H01L27/0886 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of forming a contact hole includes providing a substrate. A nitrogen-containing dielectric layer, a first material layer, a second material layer, an oxygen-containing dielectric layer and a patterned photoresist layer cover the substrate from bottom to top. Then, the oxygen-containing dielectric layer is etched by taking the second material layer as a first etching stop layer to form a patterned oxygen-containing dielectric layer. Latter, the second material layer is etched by taking the first material layer as a second etching stop layer to form a patterned second material layer. Subsequently, the first material layer is etched by taking the nitrogen-containing dielectric layer as a third etching stop layer to form a patterned first material layer. Finally, the nitrogen-containing dielectric layer is etched until the substrate is exposed.

    Abstract translation: 形成接触孔的方法包括提供基板。 含氮介电层，第一材料层，第二材料层，含氧介电层和图案化的光致抗蚀剂层从底部到顶部覆盖基板。 然后，通过将第二材料层作为第一蚀刻停止层来蚀刻含氧电介质层，以形成图案化的含氧电介质层。 通过将第一材料层作为第二蚀刻停止层来蚀刻第二材料层以形成图案化的第二材料层。 随后，通过将含氮介电层作为第三蚀刻停止层来蚀刻第一材料层，以形成图案化的第一材料层。 最后，对含氮介电层进行蚀刻，直到基片露出。

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