41.
    发明专利
    未知

    公开(公告)号:FR2461380A1

    公开(公告)日:1981-01-30

    申请号:FR8015474

    申请日:1980-07-11

    Applicant: XEROX CORP

    Abstract: A laser array comprised of a plurality of stacked emitting or active regions which are in sufficiently close contact to each other that light from each active region is coupled to the light from the adjacent active regions to form a phase-locked laser array with low composite beam divergence perpendicular to the plane of the rectifying junction of the active regions.

    DISTRIBUTED FEEDBACK DIODE LASER
    42.
    发明专利

    公开(公告)号:CA1058308A

    公开(公告)日:1979-07-10

    申请号:CA246384

    申请日:1976-02-23

    Applicant: XEROX CORP

    Abstract: A laser having layers of a first material interleaved with layers of a second material with the first material having a different index of refraction and bandgap than those of the second material. The thicknesses of the layers of the first and second materials satisfy the relationship t = where m is the laser mode and n is the index of refraction of the material, such that the right and left going waves of the light produced by the layers of the first material when the laser is pumped are coupled and reinforced in a coherent manner by the layers of the second material such that reflections from the second material are in phase, thus allowing laser operation in the absence of discrete end mirrors.

    ELECTRICALLY PUMPED, SOLID-STATE DISTRIBUTED FEEDBACK LASER WITH PARTICULAR GRATING SPACING

    公开(公告)号:CA1042095A

    公开(公告)日:1978-11-07

    申请号:CA235470

    申请日:1975-09-15

    Applicant: XEROX CORP

    Abstract: ELECTRICALLY PUMPED, SOLID-STATE DISTRIBUTED FEEDBACK LASER WITH PARTICULAR GRATING SPACING A distributed feed back (DFB), electrically pumped diode laser in which the spacing of the periodic structure within the diode is selected to optimize the interaction between the periodic structure and the electromagnetic waves in the diode laser. The degree to which the waves interact with the periodic structure is described mathematically by a coupling constant K, with larger values of K corresponding to lower gains required to produce laser operation. It is shown that in DFB diode lasers higher order transverse modes have a higher coupling constant K with the periodic structure than does the lowest order transverse mode and thus the higher order transverse modes will lase more easily than the lowest order transverse mode.

    46.
    发明专利
    未知

    公开(公告)号:DE3750076D1

    公开(公告)日:1994-07-21

    申请号:DE3750076

    申请日:1987-11-18

    Applicant: XEROX CORP

    Abstract: An energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/or (b) incorporating significantly large amounts of an impurity, present in an encapsulation surface layer of a solid state semiconductor heterostructure, into regions of the heterostructure via absorption of the impurity into liquid alloy melt to form regions having different optical and/or electrical properties and (c) thereafter optionally applying IID to enlarge or extend the disordered/as-grown boundaries of the initially melted region. As a direct write analogue to surface initiated impurity-induced disordering (IID), EBILD is a flexible and viable process with high importance for continuous reproducibility and high yield in the fabrication of optoelectronic devices and thin film electronic and optoelectronic circuitry. The invention provides impurity incorporation from a solid phase impurity source using an energy beam liquid phase technique to bring about absorption of the impurity with underlying constituents in a desired pattern to produce regions that may be disordered and possess different electrical properties or optical properties or both compared to regions not part of the scanned pattern.

    48.
    发明专利
    未知

    公开(公告)号:DE3688002T2

    公开(公告)日:1993-07-22

    申请号:DE3688002

    申请日:1986-05-27

    Applicant: XEROX CORP

    Abstract: A hybrid index/gain-guided semiconductor laser (10) has a gain guide type body with index waveguide attributes characterised by having two regions of current confinement means. The first of these regions contains primary current confinement means and at least one second region which includes a pair of current confinement means parallel to each other and axially offset relative to the axis of the primary current confinement means and extend from the other laser facet toward the first region. The axially offset current confinement means in the second region provides regions of lower refractive index in the laser structure compared to the region of the laser optical cavity established between the offset current confinement means and, as a result, function as an index optical waveguide for the laser. The first region may be electrically isolated from the second region so that the first region is independently pumped relative to the second region. By varying the pumping current to the regions of the axially-offset current confinement means, one can selectively change the refractive index differences established between the axially offset current confinement means regions and the optical cavity region therebetween. The primary and offset current confinement geometry may be utilized in single or multuple element lasers.

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