公开(公告)号：EP1193523A3

公开(公告)日：2003-05-07

申请号：EP01307629.4

申请日：2001-09-07

Applicant: Xerox Corporation

Inventor： Peeters, Eric ,  Rosa, Michel A. ,  Fork, David K.

IPC: G02B26/02 ,  G02B26/08 ,  G02B6/35

CPC classification number: G02B6/3518 ,  G02B6/3556 ,  G02B6/358 ,  G02B6/3584 ,  Y10S359/904

Abstract: Optical cross-connect systems (100) involve the general concept of a two dimensional array of micro electromechanical systems (MEMS) tilt mirrors (104) being used to direct light coming from a first optical fiber (110) to a second optical fiber (111). Each MEMS tilt mirror in the two dimensional array can tilt about two non-colinear axes (x,y) and is suspended by a plurality of suspension arms (450) attached to a glass substrate

Abstract translation: 光学交叉连接系统（100）涉及用于将来自第一光纤（110）的光引导至第二光纤（111）的微机电系统（MEMS）倾斜镜（104）的二维阵列的一般概念 ）。 二维阵列中的每个MEMS倾斜反射镜可以围绕两个非共线轴线（x，y）倾斜并且通过附接到玻璃基板的多个悬臂（450）悬挂

公开(公告)号：EP1304768A2

公开(公告)日：2003-04-23

申请号：EP02256864.6

申请日：2002-10-02

Applicant: Xerox Corporation

Inventor： Romano, Linda T. ,  Fork, David K.

IPC: H01R13/22

CPC classification number: H05K3/4092 ,  G01R1/06727 ,  G01R3/00 ,  H01L2924/0002 ,  Y10T29/4913 ,  H01L2924/00

Abstract: A stress-balancing layer (130) is formed over portions (122) of a spring metal finger (120) that remain attached to an underlying substrate (101) to counter internal stresses inherently formed in the spring metal finger (120). The (e.g., positive) internal stress of the spring metal causes the claw (tip) (125) of the spring metal finger (120) to bend away from the substrate (101) when an underlying release material is removed. The stress-balancing pad (130) is formed on an anchor portion (122) of the spring metal finger (120), and includes an opposite (e.g., negative) internal stress that counters the positive stress of the spring metal finger (120). A stress-balancing layer (230) is either initially formed over the entire spring metal finger (120) and then partially removed (etched) from the claw portion (125), or selectively deposited only on the anchor portion (122) of the spring metal finger (120). An interposing etch stop layer (325-1) is used when the same material composition is used to form both the spring metal (220) and stress-balancing (230) layers.

Abstract translation: 应力平衡层（130）形成在弹簧金属指状物（120）的保持附接到下面的基底（101）上的部分（122）上，以抵抗固有地形成在弹簧金属指（120）中的内部应力。 当去除下面的剥离材料时，弹簧金属（例如，正的）内部应力使得弹簧金属指（120）的爪（尖端）（125）远离基底（101）弯曲。 应力平衡垫（130）形成在弹簧金属指（120）的锚定部分（122）上，并且包括对应弹簧金属手指（120）的正应力的相反（例如，负的）内部应力， 。 最初在整个弹簧金属指状物（120）上形成应力平衡层（230），然后从爪部分（125）部分地移除（蚀刻），或者仅选择性地沉积在弹簧的锚固部分（122）上 金属手指（120）。 当使用相同的材​​料组成来形成弹簧金属（220）和应力平衡（230）层时，使用插入的蚀刻停止层（325-1）。

公开(公告)号：EP1176635A2

公开(公告)日：2002-01-30

申请号：EP01305899.5

申请日：2001-07-09

Applicant: Xerox Corporation

Inventor： Fork, David K. ,  Ho, Jackson H. ,  Lau, Rachel King-Ha ,  Lu, Jeng Ping

IPC: H01L21/48

CPC classification number: G01R1/06716 ,  B81B2203/0118 ,  B81C1/00484 ,  B81C2201/0136 ,  B81C2203/058 ,  G01R1/06727 ,  G01R1/07342 ,  G01R3/00 ,  H01L23/49811 ,  H01L2924/0002 ,  H01R4/48 ,  H01R12/57 ,  H05K3/4092 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/4914 ,  H01L2924/00

Abstract: Efficient methods for lithographically fabricating spring structures onto a substrate (301) containing contact pads or metal vias (305) by forming both the spring metal and release material layers using a single mask. Specifically, a pad of release material (310) is self-aligned to the spring metal finger (320) using a photoresist mask or a plated metal pattern, or using lift-off processing techniques. A release mask is then used to release the spring metal finger while retaining a portion of the release material that secures the anchor portion of the spring metal finger to the substrate. When the release material is electrically conductive (e.g., titanium), this release material portion is positioned directly over the contact pad or metal via, and acts as a conduit to the spring metal finger in the completed spring structure. When the release material is non-conductive, a metal strap is formed to connect the spring metal finger to the contact pad or metal via, and also to further anchor the spring metal finger to the substrate.

公开(公告)号：EP1016519A3

公开(公告)日：2001-03-14

申请号：EP99310459.5

申请日：1999-12-22

Applicant: Xerox Corporation

Inventor： Bringans, Ross D. ,  Noolandi, Jaan ,  Biegelsen, David K. ,  Fork, David K. ,  Elrod, Scott A.

IPC: B41C1/10

CPC classification number: B41C1/1041 ,  B41C1/1058

Abstract: A method and system for lithographic printing by controlling the surface energy of a printing plate (12) to affect its hydrophilic and hydrophobic properties. These properties enable the ink to be applied to the printing plate (12) in an imagewise manner and provides for rapid production of images on a recording medium. The lithographic printing plate (12) may be rewritten repeatedly between printing jobs or may even by rewritten between individual recording media.

公开(公告)号：EP0810638A3

公开(公告)日：1999-02-03

申请号：EP97303455.6

申请日：1997-05-21

Applicant: XEROX CORPORATION

Inventor： Fork, David K. ,  Boyce, James B. ,  Mei, Ping ,  Ready, Steve ,  Johnson, Richard I. ,  Anderson, Greg B.

IPC: H01L21/20 ,  H01L21/316

CPC classification number: H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02675 ,  Y10S438/967 ,  Y10T428/24479 ,  Y10T428/24926 ,  Y10T428/265

Abstract: The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the substrate. A polycrystalline silicon layer is formed by crystallizing the silicon layer using a laser beam.

公开(公告)号：EP0600658A2

公开(公告)日：1994-06-08

申请号：EP93309338.7

申请日：1993-11-23

Applicant: XEROX CORPORATION

Inventor： Fork, David K.

IPC: H01L21/20 ,  H01L39/24 ,  G02F1/35

CPC classification number: G02B6/131 ,  H01L21/31604 ,  H01L39/2461 ,  Y10S505/701 ,  Y10S505/703 ,  Y10S505/873

Abstract: An epitaxial (111) magnesium oxide (MgO) layer, suitable for use as a buffer layer (14), on a (111) surface of a tetrahedral semiconductor substrate (12), and method for its manufacture is described. The article may further include an epitaxial oxide overlayer (16) on the (111) MgO layer. The overlayer (16) may be a conducting, superconducting, and/or ferroelectric oxide layer.
The method of producing the epitaxial (111) magnesium oxide (MgO) layer (14) on the (111) surface of a tetrahedral semiconductor substrate (12) proceeds at low temperature. The method may further include steps for forming the epitaxial oxide layer on the (111) MgO layer. The methods include the steps of preparing the (111) surface of a tetrahedral semiconductor substrate for deposition and the low temperature depositing of an MgO layer on the prepared surface. Further steps may include the depositing of the oxide layer over the MgO layer.

Abstract translation: 描述适用于四面体半导体衬底（12）的（111）表面上的缓冲层（14）的外延（111）氧化镁（MgO）层及其制造方法。 该物品还可以包括在（111）MgO层上的外延氧化物覆层（16）。 覆层（16）可以是导电，超导和/或铁电氧化物层。 在四面体半导体衬底（12）的（111）表面上制造外延（111）氧化镁（MgO）层（14）的方法在低温下进行。 该方法还可以包括在（111）MgO层上形成外延氧化物层的步骤。 所述方法包括制备用于沉积的四面体半导体衬底的（111）表面和在所制备的表面上低温沉积MgO层的步骤。 另外的步骤可以包括在MgO层上沉积氧化物层。

公开(公告)号：EP0544399A3

公开(公告)日：1993-10-27

申请号：EP92309403.1

申请日：1992-10-15

Applicant: XEROX CORPORATION

Inventor： Fork, David K. ,  Nashimoto, Keiichi

IPC: H01L21/20 ,  H01L21/316 ,  H01L39/24 ,  C30B23/02

CPC classification number: H01L39/2461

Abstract: A structure includes a semiconducting substrate (12;22;32) on which is formed an epitaxial buffer layer (14;24;34) of MgO and an epitaxial layer (16;26;38) of ferroelectric material or superconducting material or both. The semiconducting substrate (12;22;32) is of the tetrahedral structure type, and may be an elemental or compound material. The MgO buffer layer (14;24;34) on the tetrahedral semiconducting substrate allows epitaxial formation of the subsequent layers, facilitating the formation of a number of novel monolithic devices.