公开(公告)号：WO2012027123A1

公开(公告)日：2012-03-01

申请号：PCT/US2011/047384

申请日：2011-08-11

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  CHANEY, Craig, R.

Inventor： CHANEY, Craig, R.

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/08 ,  H01J27/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/024 ,  H01J2237/081 ,  H01J2237/0827

Abstract: An apparatus includes an arc chamber housing (203) defining an arc chamber (204), and a feed system (210) configured to feed a sputter target (212) into the arc chamber. A method includes feeding a sputter target into an arc chamber defined by an arc chamber housing, and ionizing a portion of the sputter target.

Abstract translation: 一种设备包括限定电弧室（204）的电弧室壳体（203）和配置成将溅射靶（212）馈入电弧室的馈电系统（210）。 一种方法包括将溅射靶馈送到由电弧室壳体限定的电弧室中，并使溅射靶的一部分电离。

公开(公告)号：WO2010077659A3

公开(公告)日：2010-09-10

申请号：PCT/US2009067149

申请日：2009-12-08

Applicant: GEN PLASMA INC ,  MADOCKS JOHN

Inventor： MADOCKS JOHN

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J27/143 ,  H01J37/3053 ,  H01J37/317 ,  H01J37/32862 ,  H01J37/3405 ,  H01J2237/081

Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

Abstract translation: 提供了用于修改衬底的表面的工艺，其包括将电子供应到闭合漂移离子源的电绝缘阳极电极。 阳极电极具有正的阳极电荷偏压，而闭合的漂移离子源的其他部件电接地或支持电浮动电压。 电子遇到诱导离子形成的闭合漂移磁场。 通过在存在气体的情况下将电极充电偏压切换至负极来防止阳极污染，在阳极电极附近产生等离子体以从阳极电极清除沉积的污染物。 然后在存在重复电子源的情况下将电极电荷偏置返回到正值以诱导重复离子形成以再次改变衬底的表面。 提供了一种通过该过程来修改基板表面的设备。

公开(公告)号：WO1988002546A1

公开(公告)日：1988-04-07

申请号：PCT/JP1987000695

申请日：1987-09-24

Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION ,  MATSUOKA, Morito ,  ONO, Ken'ichi

Inventor： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

IPC: H01J27/16

CPC classification number: H01J37/32623 ,  H01J27/18 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/081

Abstract: High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma in a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generation chamber (14) and is sputtered by ions in the high density plasma. Thus, large quantities of ions can be generated. The ion generation apparatus of the invention can be applied to a thin film formation apparatus which introduces the ions and neutral particles onto a substrate (21) to form a thin film, and also to an ion source by providing an ion pickup grid in order to form a thin film on the substrate or to etch the thin film. The film can be formed at a high speed even when the voltage to be applied to the target is reduced, by disposing permanent magnets (34A, 34B) for leaking the inner surface magnetic flux of the target at the positions corresponding to the upper and lower ends of the target (23) in the plasma generation chamber (14).

公开(公告)号：EP3017082A1

公开(公告)日：2016-05-11

申请号：EP14737147.0

申请日：2014-06-30

Applicant: Oerlikon Surface Solutions AG, Trübbach

Inventor： KURAPOV, Denis ,  KRASSNITZER, Siegfried

IPC: C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3417 ,  C23C14/3407 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3497 ,  H01J2237/002 ,  H01J2237/081 ,  H01J2237/3322

Abstract: The invention relates to a device for cooling a target with a component which comprises a cooling duct and a further thermally conductive plate which is connected releasably to the cooling side of the component, wherein the cooling side is that side on which the cooling duct is effective, characterized in that, between the further thermally conductive plate and the cooling side of the component, provision is made of a first self-adhesive carbon film which is extensively adhesively bonded in a self-adhesive manner to a side of the further thermally conductive plate which faces the cooling side.

Abstract translation: 一种用于冷却目标的装置，具有包括冷却管道的部件，并且具有可拆卸地紧固到部件的冷却侧的附加导热板，冷却侧是冷却管道施加其冷却作用的一侧， 其特征在于，在所述附加导热板和所述部件的冷却侧之间，设置有第一自粘性碳膜，所述第一自粘性碳膜被广泛地并且自粘合地粘附到所述附加导热板的面向冷却侧的一侧 。

公开(公告)号：EP2368257A2

公开(公告)日：2011-09-28

申请号：EP09836710.5

申请日：2009-12-08

Applicant: General Plasma, Inc.

Inventor： MADOCKS, John

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J27/143 ,  H01J37/3053 ,  H01J37/317 ,  H01J37/32862 ,  H01J37/3405 ,  H01J2237/081

Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

公开(公告)号：EP0283519A4

公开(公告)日：1989-10-12

申请号：EP87906208

申请日：1987-09-24

Applicant: NIPPON TELEGRAPH & TELEPHONE

Inventor： MATSUOKA MORITO ,  ONO KEN ICHI

IPC: H01J27/18 ,  H01J37/32

CPC classification number: H01J37/32623 ,  H01J27/18 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/081

Abstract: High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma in a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generation chamber (14) and is sputtered by ions in the high density plasma. Thus, large quantities of ions can be generated. The ion generation apparatus of the invention can be applied to a thin film formation apparatus which introduces the ions and neutral particles onto a substrate (21) to form a thin film, and also to an ion source by providing an ion pickup grid in order to form a thin film on the substrate or to etch the thin film. The film can be formed at a high speed even when the voltage to be applied to the target is reduced, by disposing permanent magnets (34A, 34B) for leaking the inner surface magnetic flux of the target at the positions corresponding to the upper and lower ends of the target (23) in the plasma generation chamber (14).

公开(公告)号：EP0283519A1

公开(公告)日：1988-09-28

申请号：EP87906208.1

申请日：1987-09-24

Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION

Inventor： MATSUOKA, Morito ,  ONO, Ken'ichi

IPC: H01J27/18 ,  H01J37/32

CPC classification number: H01J37/32623 ,  H01J27/18 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/081

Abstract: High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma In a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generation chamber (14) and is sputtered by Ions in the high density plasma. Thus, large quantities of ions can be generated. The ion generation apparatus of the invention can be applied to a thin film formation apparatus which Introduces the ions and neutral particles onto a substrate (21) to form a thin film, and also to an ion source by providing an ion pickup grid in order to form a thin film on the substrate or to etch the thin film. The film can be formed at a high speed even when the voltage to be applied to the target is reduced, by disposing permanent magnets (34A, 34B) for leaking the inner surface magnetic flux of the target at the positions corresponding to the upper and lower ends of the target (23) ln the plasma generation chamber (14).

Abstract translation: 离子发生装置包括一真空室（12），其中真空波导的一端连接到连接到微波引导件，等离子体发生室（14）的直径和长度限定一个微波空腔谐振器的微波引入窗（17） 在其中介绍微波共振和等离子体产生的端子部被连续地连接，并且具有气体导入口（19）; 这是在等离子体腔室和在其上的负电压被施加放置的靶（23）的所有; 和磁场形成元件（34），其用于与它在二次电子的等离子体生成室和截留中心形成一个反射镜的磁场。 该装置被用于薄膜形成，并且因此可以包括用于从靶溅射的粒子电离的选择性撤出的系统，以便在离子源构成。

公开(公告)号：JP6220749B2

公开(公告)日：2017-10-25

申请号：JP2014154424

申请日：2014-07-30

Applicant: 株式会社日立ハイテクノロジーズ

Inventor： 浅井 健吾 ,  志知 広康 ,  高須 久幸 ,  岩谷 徹

IPC: H01J37/08 ,  H01J37/305 ,  H01J27/04 ,  H01J27/02

CPC classification number: H01J37/08 ,  H01J27/04 ,  H01J37/30 ,  H01J37/305 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/303

公开(公告)号：JP6141777B2

公开(公告)日：2017-06-07

申请号：JP2014029808

申请日：2014-02-19

Applicant: 株式会社半導体エネルギー研究所

Inventor： 山崎 舜平 ,  津吹 将志 ,  太田 将志 ,  黒澤 陽一 ,  石原 典隆

IPC: H01L21/336 ,  H01L21/363 ,  C23C14/34 ,  C23C14/08 ,  H01L29/786

CPC classification number: H01L21/02631 ,  B82Y30/00 ,  C01G15/006 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C30B1/04 ,  C30B23/08 ,  C30B28/02 ,  C30B29/22 ,  C30B29/68 ,  H01J37/3429 ,  H01L21/02565 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  H01J2237/081 ,  H01J2237/3322 ,  H01J2237/3323

公开(公告)号：KR1020160030160A

公开(公告)日：2016-03-16

申请号：KR1020167000019

申请日：2014-07-08

Applicant: 미쓰비시 마테리알 가부시키가이샤

Inventor： 사쿠라이아키라 ,  구유 ,  사토유지 ,  구마가이사토시

IPC: C25C1/12 ,  C23C14/34 ,  C22C9/00 ,  C23C14/14

CPC classification number: H01J37/3426 ,  C22C9/00 ,  C23C14/3414 ,  C25C1/12 ,  H01J2237/081 ,  H01J2237/3323

Abstract: 본발명의고순도구리스퍼터링타깃용구리소재는 O, H, N, C 를제외한 Cu 의순도가 99.999980 mass% 이상 99.999998 mass% 이하의범위내로되고, Al 의함유량이 0.005 massppm 이하, Si 의함유량이 0.05 massppm 이하로되어있다.