公开(公告)号：WO2013119313A2

公开(公告)日：2013-08-15

申请号：PCT/US2012068427

申请日：2012-12-07

Applicant: TUFTS COLLEGE

Inventor： MIURA NAOTO

IPC: H01L31/042

CPC classification number: C23C16/45595 ,  C23C16/517 ,  C23C16/545 ,  H01J37/32201 ,  H01J37/32211 ,  H01J37/32266 ,  H01J37/32311 ,  H01J37/32366 ,  H01J37/32825 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: A plasma generator ignites and sustains a uniform and linear plasma near atmospheric pressure. The plasma generator is composed of two power supplies, a power divider, an array of transmission line tapers and an ignition resonator. One microwave power supply is used to drive the taper array and the other power supply drives the ignition resonator. The power divider splits the taper array power evenly and delivers it to each taper. A plasma is ignited by the ignition resonator and then the plasma propagates to the taper array. The taper array does not start a plasma by itself and the ignition resonator is provided to do so. Increasing the number of tapers increases the length of the plasma.

Abstract translation: 等离子体发生器点燃并维持大气压附近的均匀和线性等离子体。 等离子体发生器由两个电源，功率分配器，传输线锥形阵列和点火谐振器组成。 一个微波电源用于驱动锥形阵列，另一个电源驱动点火谐振器。 功率分配器将锥形阵列的功率均匀分离，并将其递送到每个锥度。 等离子体被点火谐振器点燃，然后等离子体传播到锥形阵列。 锥形阵列本身不启动等离子体，并且提供点火谐振器来实现。 增加锥度数增加了等离子体的长度。

公开(公告)号：WO2013001833A1

公开(公告)日：2013-01-03

申请号：PCT/JP2012/004230

申请日：2012-06-29

Applicant: 東京エレクトロン株式会社 ,  岩▲崎▼ 征英

Inventor： 岩▲崎▼　征英

IPC: H01L21/3065 ,  C23C16/511 ,  H01L21/205

CPC classification number: H01J37/32201 ,  H01J37/32211 ,  H01J37/3222

Abstract: ＲＦバイアス用の高周波を印加するための給電棒と、前記給電棒の上端にサセプタを接続し、下端にマッチングユニット内の整合器の高周波出力端子を接続し、給電棒を内部導体としてその周りを囲む円筒状の外部導体を設け、同軸線路を形成したマイクロ波プラズマ処理装置において、前記同軸線路には、チャンバ内のプラズマ生成空間から線路内に入り込んだ不所望なマイクロ波の空間伝播を遮断するためのチョーク機構を設け、マイクロ波のＲＦ給電ラインへの漏洩をライン途中で遮断してマイクロ波漏洩障害を防止する。

Abstract translation: 该微波等离子体处理装置具有：用于施加RF偏置高频波的电源棒，其在电源棒的顶部连接到基座，在底部连接到基座 匹配箱内的高频输出端子设在匹配单元内; 以及通过在用作内部导体的电源棒周围提供圆柱形外部导体而形成的同轴路径。 在同轴路径中设置有阻塞从室内形成的等离子体产生空间进入路径的不需要的微波的空间传播的阻塞机构，以阻止微波泄漏到RF电源线 在线的中间，以防止因微波泄漏引起的故障。

公开(公告)号：WO2004033753A1

公开(公告)日：2004-04-22

申请号：PCT/JP2003/012946

申请日：2003-10-09

Applicant: 東洋製罐株式会社 ,  並木 恒久 ,  家木 敏秀 ,  倉島 秀夫 ,  稲垣 肇 ,  小林 亮 ,  山田 幸司

Inventor： 並木 恒久 ,  家木 敏秀 ,  倉島 秀夫 ,  稲垣 肇 ,  小林 亮 ,  山田 幸司

IPC: C23C16/40

CPC classification number: C23C16/515 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/40 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32311

Abstract: 本発明のプラズマＣＶＤ法による金属酸化膜を形成する方法は、低出力領域でのグロー放電によって有機金属が主体とする反応を行った後、高出力領域でのグロー放電によって有機金属と酸化性ガスとの反応を行うことにより、プラスチック基体表面に、有機性層を介して金属酸化膜を形成する。この方法によれば、プラスチック等の基体の表面に、プラズマＣＶＤ法により、密着性や柔軟性、可撓性に優れた薄膜を形成することができる。

Abstract translation: 根据等离子体CVD法形成金属氧化物膜的方法，包括在低输出区域进行辉光放电，以进行主反应物为有机金属的反应，然后在高输出区域进行辉光放电，以便 进行有机金属与氧化性气体的反应，得到塑料基板，并且在其表面顺序地叠加有机层和金属氧化物膜。 该方法能够根据等离子体CVD工艺在诸如塑料的基板的表面上形成优异的粘附性，柔软性和柔性的薄膜。

公开(公告)号：US12112921B2

公开(公告)日：2024-10-08

申请号：US17277188

申请日：2019-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Ikuta ,  Hirokazu Ueda ,  Yutaka Fujino

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32201 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/334

Abstract: This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.

公开(公告)号：US20240254626A1

公开(公告)日：2024-08-01

申请号：US18564641

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Hiroki YAMADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Nobutake KABUKI

IPC: C23C16/455 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/26 ,  C23C16/45534 ,  C23C16/45544 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32201 ,  H01J2237/332

Abstract: A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.

公开(公告)号：US20240222085A1

公开(公告)日：2024-07-04

申请号：US18605902

申请日：2024-03-15

Applicant: Tokyo Electron Limited

Inventor： Koichiro NAKAMURA ,  Norihisa KIYOFUJI

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32174 ,  H01J37/32238 ,  H01J2237/327 ,  H01J2237/335

Abstract: A plasma processing method is implementable with a plasma processing apparatus. The plasma processing method includes applying a voltage to a lower electrode in a substrate support with a gas being supplied into a chamber in the plasma processing apparatus. The substrate support is located in the chamber. The plasma processing method further includes generating plasma by providing a radio-frequency wave after application of the voltage to the lower electrode is started. In the method, the applying of the voltage and the generating of the plasma are performed without an object on a substrate support surface of the substrate support.

公开(公告)号：US11961713B2

公开(公告)日：2024-04-16

申请号：US17055680

申请日：2019-05-22

Applicant: SAIREM SOCIETE POUR L'APPLICATION INDUSTRIELLE DE LA RECHERCHE EN ELECTRONIQUE ET MICRO ONDES

Inventor： Louis Latrasse ,  Thibault Gadeyne

IPC: H01P5/103 ,  H01J37/32 ,  H01P5/12

CPC classification number: H01J37/32229 ,  H01J37/32201 ,  H01J37/32311 ,  H01P5/103 ,  H01P5/12

Abstract: A microwave coupling/combining device for coupling and combining at least two microwave sources includes a waveguide provided with a sleeve extending longitudinally along a main axis and having two opposing ends having a first end provided with an element forming a short-circuit and a second open end. The device further includes at least one transverse bar extending inside the sleeve along a transverse axis orthogonal to the main axis; and at least two coaxial connectors provided for being connected respectively to microwave sources. Each coaxial connector is mounted externally on the sleeve and has a central conductive core connected to and extended by a conductive antenna extending in a direction orthogonal to the transverse axis and to the main axis inside the sleeve and ending by an end attached to a transverse bar.

公开(公告)号：US20240096655A1

公开(公告)日：2024-03-21

申请号：US18469687

申请日：2023-09-19

Applicant: Kokusai Electric Corporation

Inventor： Katsuhiko Yamamoto

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32201 ,  H01J37/32449 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67276

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber; and a gas supplier through which a cooling gas is supplied to the substrate by adjusting a direction of supplying the cooling gas.

公开(公告)号：US11862432B2

公开(公告)日：2024-01-02

申请号：US17251449

申请日：2018-07-02

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Hiroshi Suenobu ,  Shingo Yamaura ,  Tai Tanaka ,  Michio Takikawa

IPC: H05B6/70 ,  H05B6/80 ,  H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32311 ,  H01J37/32926 ,  H05B6/70 ,  H05B6/806

Abstract: A radiation element for radiating a microwave into the heating chamber at least one hollow dielectric member in which a gas is sealed, the hollow dielectric member having electrodes and a control unit having a plasma control unit for controlling the state of the hollow dielectric member and a current adjustment unit for adjusting a current to be applied to the electrodes of the hollow dielectric member under the control of the plasma control unit, the current adjustment unit being connected to the electrodes; and wherein the plasma control unit controls the state of the hollow dielectric member to put into one of states of: a plasma state in which the microwave is reflected by the gas; a plasma state in which the microwave is absorbed by the gas; and a gas state in which the microwave is allowed to be transmitted through the gas.

公开(公告)号：US11721532B2

公开(公告)日：2023-08-08

申请号：US17338510

申请日：2021-06-03

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Mani Subramani

IPC: H01J37/32 ,  H01J27/18 ,  H05H1/46 ,  C23C16/511 ,  C23C14/35

CPC classification number: H01J37/32678 ,  C23C14/357 ,  C23C16/511 ,  H01J27/18 ,  H01J37/3222 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32238 ,  H01J37/32247 ,  H01J37/32266 ,  H01J37/32669 ,  H01J37/32935 ,  H05H1/46

Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.