公开(公告)号：US20250149329A1

公开(公告)日：2025-05-08

申请号：US18838595

申请日：2023-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Hiroki YAMADA

IPC: H01L21/02 ,  C23C16/455

Abstract: A substrate processing method includes: a preparation process of preparing a substrate having an underlying layer; a first process of forming a first graphene film, which has a first stress, on the underlying layer; a second process of forming a second graphene film, which has a second stress different from the first stress, on the first graphene film; and a third process of forming a third graphene film, which has a third stress different from the second stress, on the second graphene film.

公开(公告)号：US20240120183A1

公开(公告)日：2024-04-11

申请号：US18263920

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Hiroki YAMADA

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/455 ,  C23C16/511 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32816 ,  C23C16/26 ,  C23C16/45557 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32743 ,  H01L21/02115 ,  H01L21/02274 ,  H01J37/32192 ,  H01J2237/182 ,  H01J2237/332

Abstract: A substrate processing method of processing a substrate includes: a carry-in process of carrying the substrate into a processing container; a first process of forming a first carbon film on the substrate with plasma of a first mixture gas containing a carbon-containing gas in a state in which interior of the processing container is maintained at a first pressure; and a second process of changing a pressure in the processing container to a second pressure higher than the first pressure.

公开(公告)号：US20220262601A1

公开(公告)日：2022-08-18

申请号：US17672217

申请日：2022-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiichi WATANABE ,  Manabu SATO ,  Masayuki SAWATAISHI ,  Hiroki YAMADA ,  Shinji ORIMO

IPC: H01J37/32

Abstract: An etching method includes (a) disposing a substrate having a silicon oxide film on a substrate support in a chamber. The substrate includes a plurality of etching stop layers arranged inside the silicon oxide film. The plurality of etching stop layers are arranged at different positions in a thickness direction of the silicon oxide film. Each of the plurality of etching stop layers is formed of at least one of tungsten and molybdenum. The etching method (b) supplying a processing gas into the chamber, the processing gas including a gas containing at least one of tungsten and molybdenum, a gas containing carbon and fluoride, and an oxygen-containing gas; and (c) generating plasma from the processing gas to etch the silicon oxide film, thereby forming a plurality of recesses that reach the plurality of etching stop layers, respectively, in the silicon oxide film.

公开(公告)号：US20250129474A1

公开(公告)日：2025-04-24

申请号：US18999454

申请日：2024-12-23

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Masataka TOIYA ,  Eiki KAMATA ,  Hiroki YAMADA ,  Takashi MATSUMOTO

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A method of processing a substrate includes placing the substrate on a stage in a process container, supplying a plasma generating gas into the process container to generate plasma of first power at a first pressure, controlling an inside of the process container to a second pressure lower than the first pressure, and supplying a carbon-containing gas into the process container to form a graphene film on the substrate.

公开(公告)号：US20230080956A1

公开(公告)日：2023-03-16

申请号：US17931930

申请日：2022-09-14

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Ryota IFUKU ,  Hiroki YAMADA ,  Haruhiko FURUYA

IPC: H01L21/3205 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677

Abstract: A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.

公开(公告)号：US20240254626A1

公开(公告)日：2024-08-01

申请号：US18564641

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Hiroki YAMADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Nobutake KABUKI

IPC: C23C16/455 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/26 ,  C23C16/45534 ,  C23C16/45544 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32201 ,  H01J2237/332

Abstract: A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.

公开(公告)号：US20210043461A1

公开(公告)日：2021-02-11

申请号：US16983229

申请日：2020-08-03

Applicant: Tokyo Electron Limited

Inventor： Seiichi WATANABE ,  Hiroki YAMADA ,  Manabu SATO

IPC: H01L21/311 ,  H01L21/3213

Abstract: There is provision of a method for etching a substrate above which a first underlying film, a second underlying film positioned deeper than the first underlying film, a silicon oxide film formed on the first and second underlying films, and a mask on the silicon oxide film are provided. In the mask, first and second openings are formed above the first and second underlying films respectively. After the first underlying film is exposed by etching the silicon oxide film using a first gas, the silicon oxide film is etched by using a second gas while depositing deposits on the first underlying film, and the silicon oxide film is etched by using a third gas while removing the deposits on the first underlying film. The etching using the second gas and the etching using the third gas are repeated multiple times.