公开(公告)号：CA1100564A

公开(公告)日：1981-05-05

申请号：CA316378

申请日：1978-11-16

Applicant: HELL RUDOLF DR ING G M B H

Inventor： BEISSWENGER SIEGFRIED

IPC: H01J3/18 ,  H01J3/22 ,  H01J29/64 ,  H01J37/141 ,  H01J37/21 ,  H01J29/56

Abstract: An electron-optical lens arrangement for electron beam apparatus having a static and a dynamic focussing lens system, in which the dynamic focussing lens system is situated inside the static focussing lens system.

公开(公告)号：DE2752598B2

公开(公告)日：1981-01-29

申请号：DE2752598

申请日：1977-11-25

Applicant: DR.-ING. RUDOLF HELL GMBH, 2300 KIEL

Inventor： BEISSWENGER, SIEGFRIED, DIPL.-PHYS. DR., 2308 PREETZ

IPC: H01J3/18 ,  H01J3/22 ,  H01J29/64 ,  H01J37/141 ,  H01J37/21

公开(公告)号：DE2315918A1

公开(公告)日：1974-10-10

申请号：DE2315918

申请日：1973-03-30

Applicant: LEYBOLD HERAEUS GMBH & CO KG

Inventor： SCHILLALIES HELMUT DIPL PHYS ,  BARZ ALFRED DIPL PHYS

IPC: H01J3/02 ,  H01J29/62 ,  H01J3/18

公开(公告)号：WO2021070289A1

公开(公告)日：2021-04-15

申请号：PCT/JP2019/039850

申请日：2019-10-09

Applicant: 株式会社ニコン

Inventor： 後藤　太邦 ,  石川　元英

IPC: H01J3/18 ,  C23C14/30 ,  H01J1/304 ,  H01J3/02

Abstract: 電子銃は、電子放出面を有するエミッタと、引出電極としての第１電極と、第１電極の第１面と対向する第２面を有する第２電極と、を備え、第２電極の第２面は、電子放出面の中心からの距離が互いに異なる第１領域と第２領域とを有し、第１領域における曲率は、第２領域における曲率と異なる、

公开(公告)号：WO00054299A1

公开(公告)日：2000-09-14

申请号：PCT/JP2000/001377

申请日：2000-03-08

IPC: H01J1/304 ,  H01J3/18 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/319

Abstract: A field emission device (FED) comprising an amorphous substrate; impurity diffusion preventing layer; FET formed on a formation surface of a semiconductor layer made of amorphous silicon or polycrystalline silicon; one or more emitters made by etching the semiconductor layer of the FET drain region; and extraction electrode. The semiconductor layer is made by CVD process. The emitter array is formed within a ring or polygonal FET drain region, and surrounded by the ring or polygonal gate electrode and source electrode. The entire FET region is covered with an insulation layer and metal layer. This configuration provides uniform current emission characteristics among emitter chips, and achieves uniform electron emissions to all directions. Application of present FED to a flat panel display device achieves high picture quality, low power consumption, and low manufacturing cost.

Abstract translation: 一种场发射器件（FED），包括非晶衬底; 杂质扩散防止层; 形成在由非晶硅或多晶硅制成的半导体层的形成表面上的FET; 通过蚀刻FET漏区的半导体层制成的一个或多个发射极; 和提取电极。 半导体层由CVD工艺制成。 发射极阵列形成在环形或多边形FET漏极区域内，被环形或多边形栅极电极和源极包围。 整个FET区域被绝缘层和金属层覆盖。 这种配置在发射极芯片之间提供均匀的电流发射特性，并且实现了向所有方向均匀的电子发射。 将现有FED应用于平板显示装置可实现高画质，低功耗，低制造成本。

公开(公告)号：WO98054741A1

公开(公告)日：1998-12-03

申请号：PCT/US1998/009907

申请日：1998-05-27

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J9/50 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2329/00

Abstract: An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.

Abstract translation: 电子发射器件利用形状像梯子的发射电极（12），其中发射极开口线（18）延伸穿过电极。 在制造该器件时，发射器开口可用于将诸如聚焦系统（37）的边缘（38C）等某些边缘自对准到诸如控制电极（28）的边缘（28C）的其它边缘， 获得所需的横向间距。 通常借助于背面光刻曝光操作来实现自对准。 发射电极的梯形也有助于消除涉及电极的短路缺陷。

公开(公告)号：EP2869327B1

公开(公告)日：2023-10-25

申请号：EP13812456.5

申请日：2013-06-28

Inventor： ISHIHARA, Tomonari ,  AKAHORI, Naoki ,  ANNO, Hidero

IPC: H01J35/06 ,  H01J35/14 ,  H01J3/06 ,  H01J29/50 ,  H01J19/10 ,  H01J19/42 ,  H01J1/16 ,  H01J1/18 ,  H01J1/88 ,  H01J29/04 ,  H01J3/18 ,  H01J29/62 ,  H01J23/04 ,  H01J23/083

公开(公告)号：EP0985222A4

公开(公告)日：2006-04-19

申请号：EP98928822

申请日：1998-05-27

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： HAVEN DUANE A ,  BARTON ROGER W ,  SPINDT CHRISTOPHER J ,  KNALL N JOHAN ,  OBERG STEPHANIE J

IPC: H01J1/304 ,  H01J31/12 ,  H01J1/30 ,  H01J3/02 ,  H01J3/18 ,  H01J9/02 ,  H01J9/14 ,  H01J19/24 ,  H01J29/46 ,  H01J29/62

CPC classification number: H01J3/022 ,  H01J9/148 ,  H01J29/467

Abstract: An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A) and a focus coating (39 or 39A) that penetrates, preferably only pathway, into a focus opening (40) extending through the base focusing structure. The focus coating, normally of lower resistivity than the base focusing structure, is typically formed by an angled deposition technique. An access conductor (106 or 106A) is preferably electrically coupled to the lower surface of the focus coating. A potential for controlling the focusing of electrons that travel through the focus opening is provided to the focus coating via the access conductor.

公开(公告)号：EP1057198A4

公开(公告)日：2002-01-30

申请号：EP99903470

申请日：1999-01-29

Applicant: SI DIAMOND TECHN INC

Inventor： YANIV ZVI ,  ROBINDER RONALD CHARLES

IPC: H01J3/30 ,  H01J1/304 ,  H01J1/316 ,  H01J3/02 ,  H01J3/08 ,  H01J3/18 ,  H01J29/04 ,  H01J29/46 ,  H01J29/52 ,  H01J29/62 ,  H01J29/74 ,  H01J31/12 ,  H01J1/46 ,  H01J1/62 ,  H01J21/10 ,  H01J29/48 ,  H01J63/04

CPC classification number: H01J29/467 ,  H01J3/021 ,  H01J3/022 ,  H01J29/04 ,  H01J2329/00

Abstract: A plurality of field emission cathodes (601) generate an emission of electrons, wherein the emission of electrons is then controlled and focused using various electrodes (602, 603, 604) to produce an electron beam. Horizontal and vertical deflection techniques (605, 606, respectively), similar to those used within a cathode ray tube, operate to scan the individual electron beams onto portions of a phosphor screen (401) in order to generate images. The use of the plurality of field emission cathodes provides for a flatter screen depth than possible with a typical cathode ray tube.

公开(公告)号：EP0583329B1

公开(公告)日：1995-12-27

申请号：EP92909919.0

申请日：1992-05-08

Applicant: FISONS plc

Inventor： JULLIEN, Joseph, Paul, Robert ,  BATEY, Jonathan, Hugh ,  MELLOR, Robert

IPC: H01J49/42 ,  H01J3/18

CPC classification number: H01J49/4215 ,  H01J3/18 ,  H01J49/068 ,  H01J49/4255

Abstract: The method includes the steps of assembling one or more blanks (1) in supporting means (2, 3) so that the or each blank occupies at least the space to be occupied by elongate electrodes and, without disturbing the position of the blanks relative to said supporting means, removing material from all said blanks to generate said electrodes in position in said supporting means. Preferably the material is removed by an electrode-discharge machining (EDM) process, e.g. diesinking. The method avoids time-consuming alignment of preformed electrodes in said supporting means.