Abstract:
An ionization gauge to measure pressure and to reduce sputtering yields includes at least one electron source that generates electrons. The ionization gauge also includes a collector electrode that collects ions formed by the collisions between the electrons and gas molecules. The ionization gauge also includes an anode. An anode bias voltage relative to a bias voltage of a collector electrode is configured to switch at a predetermined pressure to decrease a yield of sputtering collisions.
Abstract:
An ionization gauge to measure pressure, while controlling the location of deposits resulting from sputtering when operating at high pressure, includes at least one electron source that emits electrons, and an anode that defines an ionization volume. The ionization gauge also includes a collector electrode that collects ions formed by collisions between the electrons and gas molecules and atoms in the ionization volume, to provide a gas pressure output. The electron source can be positioned at an end of the ionization volume, such that the exposure of the electron source to atom flux sputtered off the collector electrode and envelope surface is minimized. Alternatively, the ionization gauge can include a first shade outside of the ionization volume, the first shade being located between the electron source and the collector electrode, and, optionally, a second shade between the envelope and the electron source, such that atoms sputtered off the envelope are inhibited from depositing on the electron source.
Abstract:
An ion detection device has a strip of carbon-based nanomaterial (CNM) film and a chamber enclosing the CNM film. A low bias voltage is applied at the ends of the CNM film strip, and ions present in the chamber are detected by a change in the magnitude of current flowing through the CNM film under the bias. Also provided are methods for fabricating the device, methods for measuring pressure of a gas, and methods for monitoring or quantifying an ionizing radiation using the device.
Abstract:
lon-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 10 14 carriers/cm 2 . A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.