Abstract:
PROBLEM TO BE SOLVED: To effectively prevent the substitute precipitation of silver or copper onto the surface of a tin or tin alloy anode at the time of plating treatment in a lead-free tin-silver based alloy or tin-copper based alloy electroplating bath. SOLUTION: The lead-free tin-silver based alloy or tin-copper based alloy electroplating bath is obtained by adding a nonionic surfactant(s) selected from distyrenated phenol polyalkoxylate whose HLB(Hydrophile-Lypophile Balance) is 7.3 to 15.2, tristyrenated phenol polyalkoxylate whose HLB is 7.0 to 10.4, distyrenated cresol polyalkoxylate whose HLB is 8.2 to 15.0, and a tristyrenated cresol polyalkoxylate whose HLB is 7.7 to 13.9 to a tin-silver based alloy or tin-copper based alloy electroplating bath comprising a stannous salt, a silver or copper salt and various acids. Since the nonionic surfactant(s) with the specified chemical structural species having the prescribed HLB is selectively added, the substitute precipitation of silver or copper onto an anode surface is prevented, and the consumption of silver or copper in the bath is suppressed, thus the composition of the plating bath can be stabilized. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a reducing agent solution with which metal powder or a metal film capable of exhibiting the satisfactory characteristics of the metal itself to the full can be produced since it does not comprise any halogen, and in which the re-regulation of pH is not needed in the case it is regenerated by electrolytic treatment and is repeatedly used, and to provide methods of forming metal powder and a metallic film using the same. SOLUTION: The reducing agent solution comprises the ions of transition metal for reducing the ions of metal in a reaction system so as to be precipitated and methansulfonate ions, and is substantially free from halogen. As for the method of producing metal powder, the ions of metal are reduced by the reducing action of the ions of transition metal in a reaction system of a liquid phase including the reducing agent solution so as to be precipitated. As for the method of forming a metal film, in a state where the object to be plated is dipped into a reaction system including the reducing agent solution, the ions of metal are reduced by the reducing action of the ions of transition metal so as to be precipitated over the surface of the object to be plated. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a low-cost sheeted material for preventing electromagnetic interference which meets the demands of public in the effects of sufficiently shielding electromagnetic waves, in particular, magnetic field waves in a frequency domain of lower than 10MHz, and ensures shielding effects in a comparatively low frequency band attained not only by reflecting but also by absorbing electromagnetic waves. SOLUTION: The sheeted material for preventing electromagnetic interference is provided, in which at least one layer (layer A) of a soft magnetic metal film comprising microcrystal whose particle size is less than 100nm as observed by a transmission microscope, is formed by wet plating. A metal film layer (layer B) of better conductivity than that of the soft magnetic film is formed above or (and) below the layer A by wet plating to obtain a layer structure of two or more layers. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To improve the reflow property and film appearance of a tin or tin alloy film. SOLUTION: The aliphatic sulfonic acid plating bath for tin and tin alloy contains (a) a soluble salt composed of a stannous salt and any of the salts of the metals selected from copper, bismuth, silver, indium, zinc, nickel, etc., and (b) aliphatic sulfonic acid composed of alkane sulfonic acid and alkanol sulfonic acid, in which the aliphatic sulfonic acid (b) precludes sulfur compounds as impurities exclusive of the sulfonic acid (a compound having a sulfur atom on the way of oxidation within the molecule and a compound having a sulfur atom and chlorine atom in combination within the molecule) or reduces such compounds down to a slight concentration. Examples of impurities that affect plating characteristics include dimethyl disulfide, methane thiosulfonic acid S-methyl and α-chlorodimethyl sulfone. COPYRIGHT: (C)2004,JPO&NCIPI