Abstract:
Systems and methods for scanning a beam of light over a specimen are provided. A system may include a pre-scan acousto-optical deflector (AOD) configured to deflect a beam of light (16), a seconds AOD (8) configured as a travelling lens to focus the scanning beam (28), a relay lens (36) and an objective lens (26). The relay lens may be centered on the scan line (30) produced by the second AOD, while the objective lens may be substantially de-centered with respect to the relay lens to produce a telecentric scanning spot with no field tilt. The system may modulate the amplitude of the sound wave in the first AOD to compensate for attenuation in the second AOD. The system may pre-fill one chirp packet (14) in the second AOD while another chirp packet is scanning to substantially reduce a delay between consecutive scans.
Abstract:
At least one pair of capacitively coupled electrodes contained in a structure is used to sense the deflection of a diaphragm in a pressure or force sensor for measuring the pressure or force exerted on the diaphragm. Preferably the structure has properties (such as one or more of the following: dimensions, hardness, area and flexibility) that are substantially the same as those of a real substrate, such as a semiconductor wafer or flat panel display panel. For measuring shear force, at least one shear force sensor is used to measure the shear force on a member, when the member is in contact with and pressed against a polishing or planarization surface and a lateral force is applied between the two surfaces. Preferably the structure and the surface of the structure have properties (such as one or more of the following: dimensions and coefficient of friction) that are substantially the same as those of a real substrate, such as a semiconductor wafer or flat panel display panel.
Abstract:
Computer-implemented methods and systems for determining different process windows for a wafer printing process for different reticle designs are provided. One method includes generating simulated images illustrating how each of the different reticle designs will be printed on a wafer at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in each of the different reticle designs using the simulated images. In addition, the method includes determining a process window for the wafer printing process for each of the different reticle designs based on results of the detecting step.
Abstract:
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for determining a position of inspection data in design data space includes aligning data acquired by an inspection system for alignment sites on a wafer with data for predetermined alignment sites. The method also includes determining positions of the alignment sites on the wafer in design data space based on positions of the predetermined alignment sites in the design data space. In addition, the method includes determining a position of inspection data acquired for the wafer by the inspection system in the design data space based on the positions of the alignment sites on the wafer in the design data space. In one embodiment, the position of the inspection data is determined with sub-pixel accuracy.
Abstract:
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.
Abstract:
Methods and systems for binning defects detected on a specimen are provided. One method includes comparing a test image to reference images. The test image includes an image of one or more patterned features formed on the specimen proximate to a defect detected on the specimen. The reference images include images of one or more patterned features associated with different regions of interest within a device being formed on the specimen. If the one or more patterned features of the test image match the one or more patterned features of one of the reference images, the method includes assigning the defect to a bin corresponding to the region of interest associated with the reference image.
Abstract:
A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NTR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.
Abstract:
Systems, control subsystems, and methods for projecting an electron beam onto a specimen are provided. One system includes a stage configured to move the specimen with a non-uniform velocity. The system also includes a projection subsystem configured to project the electron beam onto the specimen while the stage is moving the specimen at the non-uniform velocity. In addition, the system includes a control subsystem configured to alter one or more characteristics of the electron beam while the projection subsystem is projecting the electron beam onto the specimen based on the non-uniform velocity. One method includes moving the specimen with a non-uniform velocity and projecting the electron beam onto the specimen during movement of the specimen. In addition, the method includes altering one or more characteristics of the electron beam during projection of the electron beam onto the specimen based on the non-uniform velocity.
Abstract:
A system and method for inspection is disclosed. The design generally employs as many as four design principles, including employing at least one lens from a relatively low dispersion glass, at least one additional lens from an additional material different from the relatively low dispersion glass, generally matching the relatively low dispersion properties of the relatively low dispersion glass. The design also may include at least one further lens from a further material different from and exhibiting a significantly different dispersion power from the relatively low dispersion glass and the additional material. Finally, the design may include lenses positioned to insert a significant amount of color within the objective, a gap, and additional lenses, the gap and additional lenses serving to cancel the color inserted.
Abstract:
In one embodiment, a system (110) to inspect an edge region of a wafer (122), comprises a surface analyzer assembly comprising a radiation targeting assembly that targets a radiation beam onto a surface of the wafer (122); a reflected radiation collection assembly to collect radiation reflected from a surface of the wafer (122); means for rotating the surface analyzer assembly about an edge surface (126) of the wafer (122); and means for detecting one or more defects in the edge region of the wafer.