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公开(公告)号：KR100720095B1
公开(公告)日：2007-05-18
申请号：KR1020000065860
申请日：2000-11-07
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/1362 , G02F1/13458 , G02F2001/136254 , H01L21/32134 , H01L21/32136 , H01L27/124 , H01L27/1255 , H01L27/1288
Abstract: Disclosed is a thin film transistor substrate and a system for inspecting the same. The thin film transistor substrate comprises gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor layer formed over the gate insulation layer; data wiring formed over the gate insulation layer and including data pads; a protection layer covering the data wiring; auxiliary pads connected to the data pads through contact holes formed in the protection layer; and a pad auxiliary layer formed protruding a predetermined height under the data pads. The inspection system for determining whether a thin film transistor substrate is defective, in which the thin film transistor substrate comprises gate wiring including gate lines, gate electrodes and gate pads, and data wiring including source electrodes and drain electrodes, includes a probe pin for contacting the gate pads or data pads and transmitting a corresponding signal, wherein a contact tip at a distal end of the probe pin for contacting the gate pads or the data pads is rounded, and a radius of the rounded contact tip is 2 μm or less, or the rounded contact tip is coated with gold (Au).
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公开(公告)号：KR100580392B1
公开(公告)日：2006-11-30
申请号：KR1019980054811
申请日：1998-12-14
Applicant: 삼성전자주식회사
IPC: G02F1/1345
Abstract: 액정 표시 장치에 있어서, 하부 기판에 형성되는 게이트선 및 데이터선과 각각 1:1로 대응되는 보조 게이트선과 보조 데이터선을 상부 기판에 형성하고, 게이트선과 보조 게이트선, 데이터선과 보조 데이터선을 각각 도전 이방성 필름으로 연결한다. 이상과 같이, 상부 기판에 하부 기판의 게이트선과 데이터선에 대응하는 배선을 형성하고 이들을 도전 이방성 필름을 통하여 게이트선과 데이터선에 연결하면 회로 배선의 신뢰성을 확보할 수 있음은 물론 개구율도 향상시킬 수 있다.
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公开(公告)号：KR1020060087220A
公开(公告)日：2006-08-02
申请号：KR1020050008152
申请日：2005-01-28
Applicant: 삼성전자주식회사
Abstract: 본 발명은 음성서비스 및 데이터서비스를 제공하는 네트워크 시스템에 관한 것으로, 음성 서비스와 데이터 서비스간 간섭을 방지하기 위한 클록을 발생하여 가입자 측과 연결된 데이터 통신라인을 통해 제공하고, 상기 클록의 위상과 가입자 측에 전송된 클록의 위상을 비교하여 얻어진 위상정보를 가입자 측으로 데이터 통신라인을 통해 제공하고, 상기 데이터 통신라인을 통해 전송된 클록의 위상을 위상정보를 이용하여 상기 클록의 위상과 일치시킴으로써, 고속의 데이터 서비스가 가능함과 아울러 품질의 데이터 서비스가 가능하도록 한 네트워크 클록제공 시스템 및 그 방법을 제안한다.
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公开(公告)号：KR100560971B1
公开(公告)日：2006-03-15
申请号：KR1019990020514
申请日：1999-06-03
Applicant: 삼성전자주식회사
IPC: H01L29/786
Abstract: 절연 기판 위에 게이트선 및 이와 연결된 게이트 전극 등의 게이트 배선을 형성하고, 그 위에 게이트 절연막, 반도체층, 저항성 접촉층과 같은 중간층, 데이터 배선용 금속층을 연속적으로 증착한 후, 게이트 전극 상부에 위치하는 부분에 두께가 데이터 배선을 형성하기 위한 부분의 두께보다 얇은 감광막 패턴을 하나의 마스크 공정을 통해 형성한 다음, 이 감광막 패턴을 마스크로 하여 하부의 데이터 배선용 금속층, 중간층 및 반도체층을 식각하여 소스 및 드레인 전극, 데이터선, 반도체 패턴, 저항성 접촉층 패턴을 형성한다. 이때, 데이터 배선, 저항성 접촉층 패턴 및 반도체 패턴은 단일 체임버 내에서 연속적으로 건식 식각하여 형성하며, 최종적으로 감광막을 동일 체임버 내에서 스트립하여 제거한다. 이처럼, 데이터 배선 및 반도체 패턴을 형성하기 위해, 하나의 마스크를 사용한 일회의 사진 공정만이 실시되며, 사진 공정 이후의 식각 공정 역시 단일 체임버 내에서 진행할 수 있으므로, 공정이 단순화된다.
4매 마스크, 단일 체임버, 건식 식각, 공정 단순화-
公开(公告)号：KR1020030042080A
公开(公告)日：2003-05-28
申请号：KR1020010072592
申请日：2001-11-21
Applicant: 삼성전자주식회사
IPC: G02F1/136
Abstract: PURPOSE: A thin film transistor substrate and a method for fabricating the same are provided to form data wires in a dual-layered structure and form slits on either of upper or lower layer in the dual-layered structure in contact parts, thereby reducing the resistance of the data wires contacting other conductive materials and improving the contact characteristics. CONSTITUTION: A thin film transistor substrate includes gate wires formed on an insulating substrate, a gate insulating film(30) covering the gate wires, data wires formed on the gate insulating film with data lines in a dual-layered structure, pixel electrodes(82) formed on pixel areas defined by the intersection between the gate and data wires, thin film transistors connected to the gate and data wires and the pixel electrodes, and a protecting film(70) formed on the data wires and the thin film transistors with contact holes(74,76,78) for exposing the data and gate wires partially. The data wires exposed via the contact holes of the protecting film are formed with slits on upper layers(662,682) of the dual-layered structure for exposing lower layers(661,681) thereof.
Abstract translation: 目的：提供一种薄膜晶体管基板及其制造方法，以形成双层结构的数据线，并在接触部分的双层结构中的上层或下层中形成狭缝，从而降低电阻 的数据线接触其他导电材料并改善接触特性。 构成：薄膜晶体管基板包括形成在绝缘基板上的栅极线，覆盖栅极线的栅极绝缘膜（30），以双层结构的数据线形成在栅极绝缘膜上的数据线，像素电极（82 ）形成在由栅极和数据布线之间的交点，连接到栅极的薄膜晶体管和数据线以及像素电极所形成的像素区域上，以及形成在数据线上的保护膜（70）和具有接触的薄膜晶体管 用于部分地暴露数据和栅极线的孔（74,76,78）。 通过保护膜的接触孔露出的数据线在双层结构的上层（662,682）上形成狭缝，用于暴露其下层（661,681）。
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Patent Agency Ranking
公开(公告)号：KR1020020094748A
公开(公告)日：2002-12-18
申请号：KR1020010033168
申请日：2001-06-13
Applicant: 삼성전자주식회사
IPC: G02F1/136
Abstract: PURPOSE: A thin film transistor substrate for a liquid crystal display device and a method for fabricating the same are provided to improve the aperture rate by forming wires forming capacitance electrodes with a transparent conductive film. CONSTITUTION: A thin film transistor substrate for a liquid crystal display device includes gate wires formed on an insulating substrate(10) and having gate lines(21) formed of a lower transparent conductive film(211) and an upper opaque conductive film(212) and gate electrodes(22), capacitance electrodes(25,26) formed of the transparent conductive film, a gate insulating film(30) covering the gate wires and the capacitance electrodes, a semiconductor layer(41) formed on the gate insulating film, resistant contact layers(52,53) formed on the semiconductor layer, data wires having data lines(61) formed on the resistant contact layer, and source and drain electrodes(62,63), a protecting film formed on the data wires, and pixel electrodes(80) formed on the protecting film and overlapping the capacitance electrodes.
Abstract translation: 目的：提供一种用于液晶显示装置的薄膜晶体管基板及其制造方法，以通过形成具有透明导电膜的电容电极的导线来提高开口率。 一种用于液晶显示装置的薄膜晶体管基板，包括形成在绝缘基板（10）上并具有由下部透明导电膜（211）和上部不透明导电膜（212）形成的栅极线（21）的栅极线， 和栅电极（22），由透明导电膜形成的电容电极（25,26），覆盖栅极线和电容电极的栅极绝缘膜（30），形成在栅极绝缘膜上的半导体层（41） 形成在半导体层上的耐电接触层（52,53），具有形成在电阻接触层上的数据线（61）的数据线，以及源极和漏极（62,63），形成在数据线上的保护膜，以及 形成在保护膜上并与电容电极重叠的像素电极（80）。
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公开(公告)号：KR1020020064022A
公开(公告)日：2002-08-07
申请号：KR1020010004618
申请日：2001-01-31
Applicant: 삼성전자주식회사
IPC: G02F1/136
Abstract: PURPOSE: A TFT(Thin Film Transistor) substrate for an LCD(Liquid Crystal Display) and a method for manufacturing the same are provided to reduce the generation of short by forming auxiliary gate lines or auxiliary data lines overlapping gate lines or data lines by forming a semiconductor layer and a resistant contact layer with contact holes. CONSTITUTION: A TFT substrate for an LCD includes a gate wire(21-23) formed on an insulating substrate, an insulating film covering the gate lines, a data wire(61-64) formed on the insulating film, and either auxiliary data lines formed on the same layer with the gate lines and connected to the data lines via first contact holes of the insulating film, or auxiliary gate lines(65) formed on the same layer with the data lines and connected to the gate lines via second contact holes(31) of the insulating film.
Abstract translation: 目的：提供一种用于LCD（液晶显示器）的TFT（薄膜晶体管）基板及其制造方法，用于通过形成与栅极线或数据线重叠的辅助栅极线或辅助数据线来减少短路的产生， 半导体层和具有接触孔的电阻接触层。 构成：用于LCD的TFT基板包括形成在绝缘基板上的栅极线（21-23），覆盖栅极线的绝缘膜，形成在绝缘膜上的数据线（61-64）和辅助数据线 与栅极线形成在同一层上，并通过绝缘膜的第一接触孔或与数据线形成在同一层上的辅助栅极线（65）连接到数据线，并经由第二接触孔连接到栅极线 （31）。
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公开(公告)号：KR1020020050017A
公开(公告)日：2002-06-26
申请号：KR1020000079349
申请日：2000-12-20
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02B23/18 , G02F1/133753 , G02F1/136227 , G02F2001/134318
Abstract: PURPOSE: A method of fabricating a liquid crystal display is provided to produce a multi-domain liquid crystal display with wide viewing angle without using an additional mask. CONSTITUTION: A pixel electrode consisting of the first region(82b) and the second region(82a) is formed on a lower substrate(10) including a gate line, a data line and a thin film transistor using the first mask. The first region of the pixel electrode has a smooth surface and the second region has a rough surface. A common electrode consisting of the first and second regions(112a,112b) is formed on an upper substrate(110) including a color filter using the second mask. The first region of the common electrode has a smooth surface and the second region has a rough surface. The upper and lower substrates are attached to each other, and liquid crystal is injected into the space between the two substrates.
Abstract translation: 目的：提供一种制造液晶显示器的方法以产生具有宽视角的多域液晶显示器，而不使用附加掩模。 构成：使用第一掩模，在包括栅极线，数据线和薄膜晶体管的下基板（10）上形成由第一区域（82b）和第二区域（82a）组成的像素电极。 像素电极的第一区域具有光滑表面，第二区域具有粗糙表面。 由包括第一和第二区域（112a，112b）的公共电极形成在包括使用第二掩模的滤色器的上基板（110）上。 公共电极的第一区域具有光滑的表面，第二区域具有粗糙的表面。 上下基板彼此附接，并且将液晶注入到两个基板之间的空间中。
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公开(公告)号：KR1020020041182A
公开(公告)日：2002-06-01
申请号：KR1020000070977
申请日：2000-11-27
Applicant: 삼성전자주식회사
IPC: G02F1/136
Abstract: PURPOSE: A thin film transistor substrate of a liquid crystal display and a method of fabricating the substrate are provided to prevent moire, to produce a liquid crystal display with high aperture ratio, and to simplify a liquid crystal display fabrication process. CONSTITUTION: A thin film transistor substrate of a liquid crystal display includes gate lines(21,22,23) including a gate electrode formed on an insulating substrate, a gate insulating layer covering the gate lines, and a semiconductor layer(41) formed on the gate insulating layer. The substrate further has data lines(61,62,63,64) including source and drain electrodes formed on the semiconductor layer, a pixel electrode(80) connected to the drain electrode, and a black matrix(95) formed on a portion of the substrate, which is not covered by the pixel electrode.
Abstract translation: 目的：提供液晶显示器的薄膜晶体管基板和制造基板的方法以防止莫尔条纹，产生具有高开口率的液晶显示器，并简化液晶显示器制造工艺。 构成：液晶显示器的薄膜晶体管基板包括栅极线（21,22,23），其包括形成在绝缘基板上的栅电极，覆盖栅极线的栅极绝缘层和形成在栅极绝缘层上的半导体层（41） 栅极绝缘层。 基板还具有数据线（61,62,63,64），其包括形成在半导体层上的源电极和漏电极，连接到漏电极的像素电极（80）和形成在半导体层 未被像素电极覆盖的基板。
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公开(公告)号：KR1020010047251A
公开(公告)日：2001-06-15
申请号：KR1019990051376
申请日：1999-11-18
Applicant: 삼성전자주식회사
IPC: G02F1/136
Abstract: PURPOSE: The thin film transistor(TFT) substrate for use in a liquid crystal display(LCD) device is to reduce a pixel defect by preventing a short between a pixel electrode and a data line. CONSTITUTION: A gate interconnection is formed on an insulating substrate, wherein the gate interconnection includes a gate line(22) and a gate electrode(24) connected to the gate line. A gate insulating layer is formed on the gate line, and a semiconductor pattern is formed on the gate insulating layer. A data interconnection including a data line, a source electrode(65) and a drain electrode(66), is formed on the semiconductor pattern. An alignment pattern(68) is formed on the semiconductor pattern, spaced apart by a predetermined space from the data line. A passivation layer is formed over the data interconnection and the alignment pattern in which a contact hole(72) is formed to expose the drain electrode and an opening(78) is formed between the data line and the alignment pattern. A pixel electrode(80) is formed on the passivation layer and is connected to the drain electrode through the contact hole.
Abstract translation: 目的：用于液晶显示（LCD）装置的薄膜晶体管（TFT）基板是通过防止像素电极和数据线之间的短路来减少像素缺陷。 构成：在绝缘基板上形成栅极互连，其中栅极互连包括连接到栅极线的栅极线（22）和栅电极（24）。 在栅极线上形成栅极绝缘层，在栅极绝缘层上形成半导体图案。 包括数据线，源极（65）和漏电极（66）的数据互连形成在半导体图案上。 在半导体图案上形成有与数据线隔开预定空间的对准图案（68）。 在数据互连和对准图案上形成钝化层，其中形成接触孔（72）以露出漏电极，并且在数据线和对准图案之间形成开口（78）。 像素电极（80）形成在钝化层上，并通过接触孔与漏电极连接。
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