公开(公告)号：KR100872799B1

公开(公告)日：2008-12-09

申请号：KR1020070091902

申请日：2007-09-11

Applicant: 포항공과대학교 산학협력단

Inventor： 이한보람 ,  손종역 ,  김형준

IPC: H01L21/24 ,  H01L21/02

Abstract: The method for manufacturing metal silicide for semiconductor contact using the plasma atomic layer deposition method is provided to achieve the formation of the interlayer film and formation of the metallic foil by one process. The method for manufacturing metal silicide using the PE-ALD method comprises as follows. The gas plasma is repeatedly injected onto the semiconductor substrate to form the metallic precursor and the interlayer for forming the metal thin film and then the metal thin film and the interlayer are formed. To prevent the oxidation of the metallic thin film, the anti-oxidation layer is formed and then heated.

Abstract translation: 提供了使用等离子体原子层沉积方法制造用于半导体接触的金属硅化物的方法，以通过一个工艺实现中间膜的形成和金属箔的形成。 使用PE-ALD方法制造金属硅化物的方法包括如下。 将气体等离子体重复地注入到半导体衬底上以形成金属前体和用于形成金属薄膜的中间层，然后形成金属薄膜和中间层。 为了防止金属薄膜的氧化，形成抗氧化层，然后加热。

公开(公告)号：KR100754012B1

公开(公告)日：2007-09-03

申请号：KR1020060084900

申请日：2006-09-04

Applicant: 포항공과대학교 산학협력단

Inventor： 김형준 ,  임성준 ,  맹완주

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/20

CPC classification number: H01L21/28202 ,  H01L21/02205 ,  H01L21/02255

Abstract: A method for forming a high-dielectric thin layer is provided to improve the reliability of the thin layer by forming the high-dielectric thin layer using an ammonia solution. A reactor container including a substrate is introduced with precursor comprising metal atoms to form an absorption layer comprising the metal atom on the substrate(S101,S102). The reactor container is introduced with an ammonia solution(NH4OH) to react the absorption layer comprising the metal atoms with NH4OH and then form a thin layer(S104). The metal is at least one selected from the group consisting of Hf, Zr, Al, Ta, Ti, Sr, La, Ba, Pb, Cr, Mo, W, Y and Mn.

Abstract translation: 提供一种形成高电介质薄层的方法，通过使用氨溶液形成高电介质薄层来提高薄层的可靠性。 引入包括基板的反应器容器，其包含金属原子的前体以形成在基板上包含金属原子的吸收层（S101，S102）。 引入反应器容器中的氨溶液（NH 4 OH）以使包含金属原子的吸收层与NH 4 OH反应，然后形成薄层（S104）。 金属为选自Hf，Zr，Al，Ta，Ti，Sr，La，Ba，Pb，Cr，Mo，W，Y和Mn中的至少一种。