Abstract:
본 발명은 실리케이트 발광재료의 제조방법 및 실리케이트 발광재료에 과한 것으로, (1) 희토류 금속의 이온, NaOH, 실리카를 포함하는 수용액인 반응용액을 수열 처리하여 희토류 금속으로 치환된 실리카 층상물질을 얻는 수열처리단계, 그리고 (2) 상기 희토류 금속으로 치환된 실리카 층상물질을 소성하여 결정성 실리케이트 물질을 형성하는 소성단계를 포함하는 실리케이트 발광재료의 제조방법을 제공한다. 상기 실리케이트 발광재료의 제조방법은 공유결합성이 강하여 발광강도가 좋고, 고온에서도 안정하기 때문에 LED 용 발광재료로 활용될 수 있는 실리케이트 발광재료를 간단하고 경제성 있게 제조할 수 있으며, 다양한 종류의 희토류 금속을 실리콘 자리에 치환시키는 것이 가능하기 때문에 적색, 녹색, 청색 등의 발광을 선택적으로 이용할 수 있는 실리케이트 발광재료를 간단하고 경제적으로 제조할 수 있다.
Abstract:
The present invention relates to CIGS or CZTS based film solar cells and a method for preparing thereof. According to one embodiment of the present invention, the CIGS or CZTS based film solar cells and a method for preparing thereof include a substrate, a molybdenum backside electrode layer, a Cu thin film, and a light absorption powder layer. The composition of light absorption powder layer has CuxInyGa1-y(SzSe1-z)2 (0
Abstract:
PURPOSE: A sphere oxide particle, a manufacturing method thereof, and a photonic crystal and a coating agent of the particle are provided to regularly arrange a silica particle in a wide area and manufacture a three dimensional megacrystal by preventing a monodisperse oxide particle changing the particle property according to an external circumstance. By remarkably increasing the stability of the silica particle according to the heating process, the sphere oxide particle, the manufacturing method thereof, and the photonic crystal and a coating agent of the particle are provided to lengthen a processing time and select a processing temperature from a room temperature to the hundreds >=. CONSTITUTION: A manufacturing method of a sphere oxide particle satisfying more than one among below properties include heating the sphere oxide particle in a temperature higher than a room: (1) A weight reduction after the heating processing higher than 550>= is 12 weight% or less; (2) A non-surface area increasing rate after the heating processing higher than 550>= is 9% or less; (3) A size contraction (average diameter changing standard) after the heating processing higher than 550>= is 2 % or less; (4) A transmittance at 960 cm^-1 is 9% or less than the transmittance at 1100 cm^-1 when measuring an infrared spectrum in a powdered status; (5) An inclination augmenter within a Q=0.7~2 nm^-1 domain is 8% or less than before the heating processing when analyzing a low-angle scattering X-ray in the powdered status after the heating process higher than 550>=. [Reference numerals] (AA) Weight[%]; (BB) Temperature[°C];
Abstract:
PURPOSE: A titanium dioxide nanopowder for high efficiency longevity dye-sensitized solar cell and a manufacturing method thereof are provided to increase photoelectric conversion efficiency through vapor synthesis and post-annealing. CONSTITUTION: A titanium dioxide nanopowder for high efficiency longevity dye-sensitized solar cell and a manufacturing method thereof comprises the following steps: forming titanium nanopowder by using titanium alkoxide precursor; and post-annealing the titania nanopowder to form anatase type titanium nanopowder having bipyramid structure. The titanium dioxide precursor is one or more selected from titanium tetraisopropoxide, titanium methoxide, titanium ethoxide, titanium butoxide, titanium tertiary butoxide and titanium ethylhexoxide. The post-annealing is processed at 400-600 deg. Celsius for 0.5-10 hours.
Abstract:
PURPOSE: A method for reducing the generation of defects in a spherical oxide particle arranging process is provided to obtain three dimensionally large size of crystals and to regularly arrange silica particles on a wide area. CONSTITUTION: The weight reduction of spherical oxide particles is less than or equal to 12 weight% after a heating process is implemented at 550 degrees Celsius or more. The specific surface area increasing rate of the spherical oxide particles is less than or equal to 9 weight% after the heating process is implemented at 550 degrees Celsius or more. The size shrinkage of the spherical oxide particles is less than or equal to 2% after the heating process is implemented at 550 degrees Celsius or more. The transmittance of the spherical oxide particles at 960 cm^-1 is 9% lower than that of the spherical oxide particles at 1100cm^-1 in an infrared ray spectrum measuring process.