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公开(公告)号：KR1019910006709B1
公开(公告)日：1991-08-31
申请号：KR1019880015512
申请日：1988-11-24
Applicant: 한국과학기술원
IPC: H01L41/18
Abstract: An oxide piezoelectric material is produced by mixing an oxide component of Pb(Cd1/2W1/2)O3 (A)-Pb(Mn1/2W1/2)O3 (B)-PbTiO3 (C)- PbZrO3 (D) [0
Abstract translation: 通过将Pb（Cd1 / 2W1 / 2）O3（A）-Pb（Mn1 / 2W1 / 2）O3（B）-PbTiO3（C）-ZbZrO3（D）[0]）的氧化物成分混合而制备氧化物压电材料， = A 0.1; 0 <= B <= 0.1; 0.45 <= C <= 0.54; 通过球磨机，用氧化物即PbO，CdO，WO 3，MnO，TiO或ZrO，0.38 <= D <= 0.49，搅拌并干燥该混合物，在850℃下烧制，对该混合物进行球磨。 的烧制粉末和粘合剂，并在900-1300℃加热形成。 压电材料具有高介电常数和机电耦合系数。
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公开(公告)号：KR100416397B1
公开(公告)日：2004-01-31
申请号：KR1020010021729
申请日：2001-04-23
Applicant: 한국과학기술원
IPC: G01L9/08
Abstract: PURPOSE: A method and a device for evaluating piezo electric characteristics of a thin film type material are provided to measure a piezoelectric d-coefficient by applying uniform stress to the entire surface of a thin film reliably and precisely regardless of the topology of the thin film without any short or plastic deformation. CONSTITUTION: A device for evaluating piezo electric characteristics of a thin film type material includes a compressor(100) for applying a predetermined amount of pressure to a piezoelectric thin film(900) at a lower part, vacuum pumps for applying a predetermined negative pressure to the piezoelectric thin film, wherein the compressor and the vacuum pump are respectively connected at both sides of a main valve for simultaneously measuring longitudinal and traverse piezo electric d-coefficients of the piezoelectric thin film in a single equipment.
Abstract translation: 目的：提供一种用于评估薄膜型材料的压电特性的方法和装置，用于通过向薄膜的整个表面均匀且可靠地施加均匀应力来测量压电d系数，而不管薄膜的拓扑如何 没有任何短路或塑性变形。 用于评估薄膜型材料的压电特性的装置包括：压缩器（100），用于向下部的压电薄膜（900）施加预定量的压力;真空泵，用于将预定的负压施加到 其中压缩机和真空泵分别连接在主阀的两侧，用于同时测量单个设备中的压电薄膜的纵向和横向压电d系数。
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公开(公告)号：KR100254799B1
公开(公告)日：2000-05-01
申请号：KR1019980010938
申请日：1998-03-30
Applicant: 한국과학기술원
IPC: H01B3/00
Abstract: PURPOSE: Provided is a magnetic composition for dielectric sintered at low temperature, which is sintered at low temperature with reducing permittivity change against temperature so that it shows low dielectric loss ratio. CONSTITUTION: The magnetic composition is characterized by adding manganese oxide, silicone oxide and calcium oxide to main component wherein two component system of (1-X)Pb(Bi1/2Nb1/2)O3-X·Pb(Bi1/2Ta1/2)O3 with including PbO, Bi2O3, Nb2O5 and WO is configured, mixing in a ball milling method, calcining at 600 deg.C for 1 hour and burning at 650-730 deg.C for 1-3 hours.
Abstract translation: 目的：提供一种在低温下电介质烧结的磁性组合物，其在低温下烧结，同时降低介电常数随温度变化，从而显示低的介电损耗比。 （1-X）Pb（Bi1 / 2Nb1 / 2）O3-X·Pb（Bi1 / 2Ta1 / 2）的双组分体系，主要成分为氧化锰，氧化硅和氧化钙， 配置包括PbO，Bi 2 O 3，Nb 2 O 5和WO的O 3，以球磨法混合，在600℃下煅烧1小时，在650-730℃下燃烧1-3小时。
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公开(公告)号：KR100254797B1
公开(公告)日：2000-05-01
申请号：KR1019980005071
申请日：1998-02-19
Applicant: 한국과학기술원
IPC: H01B3/00
Abstract: PURPOSE: A capacitor composition having high dielectric constant is provided, which has a dielectric constant of not less than 10,000 and a relatively low loss coefficient of less than 2.6 % and sinters at low temperature. CONSTITUTION: The capacitor composition having high dielectric constant is prepared by adding an aqueous solution of (Mn(NO3)2·4H2O) to a four component composition of Pb(Fe1/2Nb1/2)O3-Pb(Fe1/2Ta1/2)O3-Pb(Ni1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3 being synthesized from oxides such as lead oxide(PbO), iron trioxide(Fe2O3), niobium pentoxide(Nb2O5), tantalum pentoxide(Ta2O5), nickel oxide(NiO) and zinc oxide(ZnO).
Abstract translation: 目的：提供具有高介电常数的电容器组合物，其介电常数不小于10,000，损耗系数低于2.6％，并在低温下烧结。 构成：通过将（Mn（NO 3）2·4H 2 O）的水溶液添加到Pb（Fe1 / 2Nb1 / 2）O3-Pb（Fe1 / 2Ta1 / 2）的四组分组成中制备具有高介电常数的电容器组合物， 由氧化物（PbO），三氧化二铁（Fe2O3），五氧化二铌（Nb2O5），五氧化二钽（Ta2O5）等氧化物合成的O3-Pb（Ni1 / 3Nb2 / 3）O3-Pb（Zn1 / 3Nb2 / ，氧化镍（NiO）和氧化锌（ZnO）。
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Patent Agency Ranking
公开(公告)号：KR100254796B1
公开(公告)日：2000-05-01
申请号：KR1019980005056
申请日：1998-02-18
Applicant: 한국과학기술원
IPC: H01M4/50
Abstract: PURPOSE: A lithium manganese oxide thin film cell is provided for an easier control over properties of the thin film including composition ratio, surface characteristics, and density, thereby improving a product quality and utilizing additives. CONSTITUTION: The method for manufacturing a lithium manganese oxide thin film for a thin film secondary battery comprises preparing a source by dissolving manganese acetylacetonate and lithium acetylacetonate in a solvent, the solvent being the mixture of 1-butanol and acetic acid, and drying the solution for addition as a thin film at 230-500 deg.C for 1 minute to 1 hour using a spin coater. The thin film is then thermally treated in a Rapid Thermal Annealing(RTA) system using a halogen lamp at 650-800 deg.C for 1 minute to 1 hour.
Abstract translation: 目的：提供一种锂锰氧化物薄膜电池，用于更容易地控制薄膜的性能，包括组成比，表面特性和密度，从而提高产品质量并利用添加剂。 构成：用于制造薄膜二次电池用锂锰氧化物薄膜的方法包括通过将乙酰丙酮化锰和乙酰丙酮锂溶解在溶剂中制备源，所述溶剂是1-丁醇和乙酸的混合物，并干燥溶液 在旋转涂布机中在230-500摄氏度下加入薄膜1分钟至1小时。 然后在快速热退火（RTA）系统中使用卤素灯在650-800摄氏度下将薄膜热处理1分钟至1小时。
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公开(公告)号：KR100253114B1
公开(公告)日：2000-04-15
申请号：KR1019970001054
申请日：1997-01-15
Applicant: 한국과학기술원
IPC: H01L29/84
Abstract: PURPOSE: A thick film type semiconductor oxygen sensor is provided to present oxide composite to control electrical characteristics by adding La2O3 to pure SrTiO3, of which electricity conductivity is changed in accordance with oxygen concentration to be limited in usage as the oxygen sensor. CONSTITUTION: The oxygen sensor is characterized in that oxide composition represented by a general formula of Sr1-yLayTiO3 is an oxygen sensor which output voltage characteristics according to printed time is changed in stepwise, wherein y is 0.01 to 0.1. The oxygen sensor can have a simple structure without a reference electrode, thereby easily controlling the output voltage in accordance with the voltage and load resistance added to the sensor.
Abstract translation: 目的：提供厚膜型半导体氧传感器，以通过将La 2 O 3添加到根据氧浓度改变导电率的纯SrTiO 3来控制电特性来控制电特性，作为氧传感器的使用被限制。 构成：氧传感器的特征在于，由通式Sr1-yLayTiO3表示的氧化物组成是按照印刷时间输出电压特性的氧传感器，其中y为0.01〜0.1。 氧传感器可以具有没有参考电极的简单结构，从而根据添加到传感器的电压和负载电阻容易地控制输出电压。
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公开(公告)号：KR100241811B1
公开(公告)日：2000-03-02
申请号：KR1019970030876
申请日：1997-07-03
Applicant: 한국과학기술원
IPC: C04B35/497
Abstract: 본 발명은 마이크로파 유전체 자기조성물 및 그 제조방법에 관한 것으로, 종래의 자기조성물은 유전율이 100미만이고 공진주파수(f)와 품질계수(Q)의 곱이 4000 이하이며 공진주파수의 온도의존계수가 ±3mmp/℃ 이상의 값을 가지며, 첨가물을 산화물 형태로 첨가하기 때문에, 미량 첨가시 정확한 공정제어에 많은 문제점이 있었다.
이에 본 발명은 마이크로파 유전체 자기조성물은 (Pb
1 -
x Ca
x )(Zr
1 -
y Sn
y )O
3 를 주성분으로 하며, 이때 상기의 x,y는 몰(mol)비로서 0.15＜x＜0.40, 0.15＜y＜0.50가 되도록 하며 원소는 물에 잘 용해하는 질산망간(Mn(NO)
3 )
2 ·4H
2 O) 형태로 첨가하며 상기의 산화납(PbO), 산화칼슘(CaO), 산화지르코늄(ZrO
2 ), 산화주석(SnO
2 )으로 구성된 주조성물의 무게를 100으로 하여 수화물 질산망간(Mn(NO
3 )
2 ·4H
2 O)을 산화물의 무게비로 환산해서 산화망간(MnO)을 3중량% 미만으로 첨가하여 혼합한 후, 1000℃ 내지 1200℃에서 하소 하고, 다시 분쇄하여 성형한 다음 1200℃ 내지 1550℃의 온도의 산소분위기에서 소성하여 제조됨을 특징으로 하고 있다.-
公开(公告)号：KR1020000009709A
公开(公告)日：2000-02-15
申请号：KR1019980030308
申请日：1998-07-28
Applicant: 한국과학기술원
IPC: H02K47/00
Abstract: PURPOSE: A method for switching mechanical energy into electric energy in a moving transporter and apparatus thereof is provided to use an electric device as an auxiliary power by switching mechanical rotation power into electric energy by mounting a generator to an axis. CONSTITUTION: A method for switching mechanical energy into electric energy in a moving transporter by switching mechanical rotation power into electric energy by mounting a generator to an axis, thereby using an electric device as an auxiliary power, wherein an apparatus thereof includes; a generator (2) having an electromagnet and coil; a charger (3) for charging the electric energy switched by the generator (2); a sensor (5) for sensing rotation speed of a moving transporter (1); and AND gate (4) for transmitting the electric energy only to a capacitor (6) if a signal over a predetermined speed is received by the sensor (6).
Abstract translation: 目的：提供一种将机械能转换为电能的方法，其装置包括：通过将发电机安装在轴上，将机械旋转功率切换为电能，作为辅助动力。 构成：一种通过将发电机安装到轴上从而将机械旋转功率切换为电能来将机械能转换为电能的方法，从而使用电气装置作为辅助动力，其中装置包括： 具有电磁体和线圈的发电机（2）; 用于对由发电机（2）切换的电能进行充电的充电器（3）; 传感器（5），用于感测移动运送器（1）的转速; 以及如果传感器（6）接收到超过预定速度的信号，则用于将电能仅发送到电容器（6）的“与”门（4）。
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公开(公告)号：KR1020000009128A
公开(公告)日：2000-02-15
申请号：KR1019980029326
申请日：1998-07-21
Applicant: 한국과학기술원
IPC: H01L21/31
Abstract: PURPOSE: The method is to improve applicability of PZT thin film by adding Sb to conventional PZT thin film for non-volatile storage device and using Pt as upper and lower electrodes, and to accomplish heat treatment to the PZT thin film. CONSTITUTION: The method is to add Sb and make heat treatment to ferroelectric thin film(PZT; Pb(Zr,Ti)O3) for non-volatile storage device. Specifically, Pb, Zr, Ti use three inch metal target and 5 mm metal pellet and use Pt as upper and lower electrodes to add Sb. After deposition is made by direct current reactive sputtering process during 100 minutes at 550°C and heat treatment is made. According to the location of Sb piece lying on Zr target, the adding amount of Sb is changed. Through an experiment of changing additive amount, optimum Sb amount is 0.7 atomic percent. 180 nm PZT thin film having an additive as Sb represents grain size larger than the PZT thin film without any additives and shows increase of remnant polarization and coercive electric field and improvement in fatigue characteristics.
Abstract translation: 目的：该方法是通过将Sb添加到传统PZT薄膜用于非挥发性储存装置并使用Pt作为上下电极，提高PZT薄膜的适用性，并对PZT薄膜进行热处理。 构成：该方法是添加Sb并对铁电薄膜（PZT; Pb（Zr，Ti）O3）进行非易失性存储装置的热处理。 具体来说，Pb，Zr，Ti使用三英寸金属靶和5mm金属片，使用Pt作为上下电极添加Sb。 在550℃下在100分钟内通过直流反应溅射法沉积，进行热处理。 根据位于Zr靶上的Sb片的位置，Sb的添加量发生变化。 通过改变添加量的实验，最佳Sb量为0.7原子％。 具有Sb的添加剂的180nm PZT薄膜表示不含任何添加剂的PZT薄膜的晶粒尺寸，残留极化和矫顽电场增加，疲劳特性提高。
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