Abstract:
The present invention provides a manufacturing method of nitrogen-doped graphene comprising: a step of mixing hexamethylenetetramine to a graphene oxide dispersed liquid; and a step of performing a hydrothermal reaction on graphene oxide mixed with an amine derivative to produce the nitrogen-doped graphene. The graphene oxide is reduced by the hydrothermal reaction and nitrogen is doped by the hexamethylenetetramine at the same time.
Abstract:
The present invention relates to a semiconductor photocatalyst coated uniformly with a graphitic carbon film on the surface thereof and a fabricating method thereof. The present invention forms a graphitic carbon film having a thickness of 1 nm or less uniformly on the surface of a semiconductor by performing hydrothermal synthesis and pyrolysis on glucose, so as to keep the original structure and crystallinity of the semiconductor photocatalyst which is a support for the carbon film. The carbon film-semiconductor composite photocatalyst fabricated according to the present invention inhibits electron-hole recombination effectively because photoelectrons generated from the semiconductor photocatalyst are transmitted well to protons in an external system; and has high activity as a photocatalyst for generating hydrogen by electrolyzing water.
Abstract:
PURPOSE: TiO2-xNx nanotube in which a nitrogen atom is selectively doped and a method of manufacturing the same are provided to improve conductivity by controlling an electronic structure and reducing a band gap and to obtain more improved electrochemical properties by expanding a light absorbing area to visible light area from ultraviolet ray. CONSTITUTION: A method for manufacturing TiO2-xNx nanotube comprises the following steps: dopping nitrogen on the TiO2 nanotube through plasma; performing plasma treatment at 50~400°C and 400~800W of plasma power; and dopping nitrogen plasma on the TiO2 nanotube to improve optical and electrochemical properties. The nitrogen substitutes oxygen of TiO2 structure. The nitrogen is included in the inner side of a TiO2 lattice.