질소-도핑 그래핀 및 그 제조방법
    52.
    发明公开
    질소-도핑 그래핀 및 그 제조방법 有权
    用其制造的石墨和制造方法

    公开(公告)号:KR1020140054784A

    公开(公告)日:2014-05-09

    申请号:KR1020120120704

    申请日:2012-10-29

    Inventor: 김종득 이정우

    Abstract: The present invention provides a manufacturing method of nitrogen-doped graphene comprising: a step of mixing hexamethylenetetramine to a graphene oxide dispersed liquid; and a step of performing a hydrothermal reaction on graphene oxide mixed with an amine derivative to produce the nitrogen-doped graphene. The graphene oxide is reduced by the hydrothermal reaction and nitrogen is doped by the hexamethylenetetramine at the same time.

    Abstract translation: 本发明提供一种氮掺杂石墨烯的制造方法,包括:将六亚甲基四胺与氧化石墨烯分散液混合的工序; 以及在与胺衍生物混合的石墨烯氧化物上进行水热反应以产生掺氮石墨烯的步骤。 通过水热反应还原氧化石墨烯,同时由六亚甲基四胺掺杂氮。

    흑연 구조의 탄소막을 코팅한 반도체 광촉매 및 제조방법
    53.
    发明公开
    흑연 구조의 탄소막을 코팅한 반도체 광촉매 및 제조방법 有权
    碳酸钙包覆半导体光催化剂和制备

    公开(公告)号:KR1020140012299A

    公开(公告)日:2014-02-03

    申请号:KR1020120078747

    申请日:2012-07-19

    Abstract: The present invention relates to a semiconductor photocatalyst coated uniformly with a graphitic carbon film on the surface thereof and a fabricating method thereof. The present invention forms a graphitic carbon film having a thickness of 1 nm or less uniformly on the surface of a semiconductor by performing hydrothermal synthesis and pyrolysis on glucose, so as to keep the original structure and crystallinity of the semiconductor photocatalyst which is a support for the carbon film. The carbon film-semiconductor composite photocatalyst fabricated according to the present invention inhibits electron-hole recombination effectively because photoelectrons generated from the semiconductor photocatalyst are transmitted well to protons in an external system; and has high activity as a photocatalyst for generating hydrogen by electrolyzing water.

    Abstract translation: 本发明涉及在其表面上均匀地涂覆有石墨碳膜的半导体光催化剂及其制造方法。 本发明通过对葡萄糖进行水热合成和热解而在半导体的表面上均匀地形成厚度为1nm以下的石墨碳膜,以保持作为载体的半导体光催化剂的原始结构和结晶度 碳膜。 根据本发明制造的碳膜 - 半导体复合光催化剂有效地抑制电子 - 空穴复合,因为由半导体光催化剂产生的光电子能良好地传递到外部系统中的质子; 作为用于通过电解水生成氢的光催化剂具有高活性。

    질소 원자가 선택적으로 도핑된 TiO2-xNx 나노튜브 및 그의 제조방법
    54.
    发明公开
    질소 원자가 선택적으로 도핑된 TiO2-xNx 나노튜브 및 그의 제조방법 有权
    TIO2-XNX纳米粒子通过选择性脱氮原子状态及其制备方法

    公开(公告)号:KR1020100022726A

    公开(公告)日:2010-03-03

    申请号:KR1020080081384

    申请日:2008-08-20

    Abstract: PURPOSE: TiO2-xNx nanotube in which a nitrogen atom is selectively doped and a method of manufacturing the same are provided to improve conductivity by controlling an electronic structure and reducing a band gap and to obtain more improved electrochemical properties by expanding a light absorbing area to visible light area from ultraviolet ray. CONSTITUTION: A method for manufacturing TiO2-xNx nanotube comprises the following steps: dopping nitrogen on the TiO2 nanotube through plasma; performing plasma treatment at 50~400°C and 400~800W of plasma power; and dopping nitrogen plasma on the TiO2 nanotube to improve optical and electrochemical properties. The nitrogen substitutes oxygen of TiO2 structure. The nitrogen is included in the inner side of a TiO2 lattice.

    Abstract translation: 目的:提供氮原子被选择性掺杂的TiO 2-x N x纳米管及其制造方法,以通过控制电子结构和减小带隙来提高导电性,并且通过将光吸收面积扩大至 紫外线可见光区域。 构成:制备TiO2-xNx纳米管的方法包括以下步骤:通过等离子体掺杂TiO2纳米管上的氮; 在50〜400°C和400〜800W等离子体功率下进行等离子体处理; 并在TiO2纳米管上掺杂氮等离子体以改善光学和电化学性质。 氮替代TiO2结构的氧。 氮包围在TiO2晶格的内侧。

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