公开(公告)号：KR1020030022975A

公开(公告)日：2003-03-19

申请号：KR1020010055835

申请日：2001-09-11

Applicant: 한국과학기술원

Inventor： 임굉수 ,  전덕영 ,  이창현 ,  김상수

IPC: H01J1/30

CPC classification number: H01J1/34 ,  H01J40/06

Abstract: PURPOSE: A photocathode with an extremely thin protective film is provided to simplify processes, reduce costs and allow for ease of manufacture of device using a photocathode with a large area, by permitting processes to be freely performed in the atmosphere after the evaporation of photoelectric surface. CONSTITUTION: A photocathode comprises a transparent substrate(21); a photoelectric surface(24) evaporated on the transparent substrate, and which converts the light incident through the transparent substrate into electrons and emits electrons; a first photoelectric surface protective film(25) for covering the photoelectric surface and protecting the photoelectric surface from atmosphere; a transparent conductive plate(22) interposed between the transparent substrate and the photoelectric surface; and a second photoelectric substrate(23) interposed between the transparent conductive plate and the photoelectric surface. The electrons emitted from the photoelectric surface pass through the first photoelectric surface protective film by tunneling effects.

Abstract translation: 目的：提供一种具有极薄保护膜的光电阴极，通过允许在光电表面蒸发后在大气中自由进行工艺，简化工艺，降低成本，并容易制造使用大面积光电阴极的器件 。 构成：光电阴极包括透明基板（21）; 在透明基板上蒸发的光电面（24），将通过透明基板入射的光转换为电子并发射电子; 用于覆盖光电表面并保护光电表面免受大气影响的第一光电表面保护膜（25） 介于透明基板和光电表面之间的透明导电板（22）; 以及插入在透明导电板和光电表面之间的第二光电基板（23）。 从光电表面发射的电子通过隧道效应穿过第一光电表面保护膜。

公开(公告)号：KR1020020027070A

公开(公告)日：2002-04-13

申请号：KR1020000058404

申请日：2000-10-05

Applicant: 한국과학기술원

Inventor： 임굉수 ,  이창현

IPC: H01L31/0445 ,  H01L31/0224 ,  H01L31/18

CPC classification number: Y02E10/50 ,  Y02P70/521

Abstract: PURPOSE: A method for fabricating a fine crystalline silicon thin film is provided to crystallize the silicon thin film when the silicon thin film starts to grow, by forming a seed layer without an additional crystallization process like a repeated process or annealing process. CONSTITUTION: The seed layer(3) composed of metal or metal oxide is formed on a substrate(1) before the fine crystalline silicon thin film(4) is deposited, so that the fine crystalline silicon thin film is crystallized as soon as the fine crystalline silicon thin film is deposited. A transparent conductive layer(2) or amorphous silicon layer(5) is formed on the substrate before the seed layer is formed.

Abstract translation: 目的：提供一种制造精细晶体硅薄膜的方法，当硅薄膜开始生长时，通过形成种子层，而不需要像重复的工艺或退火工艺那样的附加的结晶工艺，就可以使硅薄膜结晶。 构成：在沉积微晶硅薄膜（4）之前，在基板（1）上形成由金属或金属氧化物构成的种子层（3），使得微细晶体硅薄膜一旦结晶 沉积晶体硅薄膜。 在种子层形成之前，在基板上形成透明导电层（2）或非晶硅层（5）。