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公开(公告)号：KR1020100044954A
公开(公告)日：2010-05-03
申请号：KR1020080103956
申请日：2008-10-23
Applicant: 한국과학기술원
IPC: H04L12/28
CPC classification number: H04L45/26 , H04L43/0852 , H04L43/10
Abstract: PURPOSE: An internet transfer route and a transmission delay time estimation system for estimating a transmission route and transmission delay time between two points on the internet are provided to minimize process delays by using a query without conducting an internet survey. CONSTITUTION: An indexing construction unit(110) changes an IP(Internet Protocol) address into an AS(Autonomous System) number. An index construction unit indexes a path piece to be used as the AS number. IP addresses form the actual measurement result. A mapping unit(120) maps the IP addresses of two points to the AS number. A path estimating unit(130) estimates the AS path between two AS numbers. A path re-combining unit recombines a plurality of recombining routes and a transmission delay time.
Abstract translation: 目的：提供互联网传输路由和用于估计互联网上两点之间的传输路由和传输延迟时间的传输延迟时间估计系统，以通过在不进行互联网调查的情况下使用查询来最小化进程延迟。 构成：索引构造单元（110）将IP（因特网协议）地址更改为AS（自治系统）号码。 索引构造单元索引要用作AS号的路径块。 IP地址形成实际测量结果。 映射单元（120）将两个点的IP地址映射到AS号。 路径估计单元（130）估计两个AS号之间的AS路径。 路径重新组合单元重新组合多个重组路由和传输延迟时间。
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公开(公告)号：KR100423849B1
公开(公告)日：2004-03-22
申请号：KR1020010055835
申请日：2001-09-11
Applicant: 한국과학기술원
IPC: H01J1/30
Abstract: A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect is exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected. By using the protective layer, the processes subsequent to the photoelectric face plate deposition process can be freely performed in the atmosphere, to thereby simplify the whole process. As a result, a production cost is lowered, and manufacturing of a device or apparatus using a large-are photocathode is facilitated.
Abstract translation: 本发明提供一种具有光电面板保护层的光电面板结构，以防止由于氧气对于大多数现有光电面板材料的高反应而导致光电效应急剧劣化， 提供光电效应暴露在大气中。 例如，使用类金刚石碳薄层作为光电阴极保护层，从而通过将光电面板与大气隔离而执行光电面板的保护功能，并且使得从光电面板产生的电子能够到达 通过隧穿效应穿过薄薄地沉积的类钻碳薄层，从而不影响光电阴极的性能。 通过使用保护层，光电面板沉积过程之后的过程可以在大气中自由进行，从而简化了整个过程。 结果，生产成本降低，并且使用大型光电阴极的装置或设备的制造变得容易。
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公开(公告)号：KR1020030022975A
公开(公告)日：2003-03-19
申请号：KR1020010055835
申请日：2001-09-11
Applicant: 한국과학기술원
IPC: H01J1/30
Abstract: PURPOSE: A photocathode with an extremely thin protective film is provided to simplify processes, reduce costs and allow for ease of manufacture of device using a photocathode with a large area, by permitting processes to be freely performed in the atmosphere after the evaporation of photoelectric surface. CONSTITUTION: A photocathode comprises a transparent substrate(21); a photoelectric surface(24) evaporated on the transparent substrate, and which converts the light incident through the transparent substrate into electrons and emits electrons; a first photoelectric surface protective film(25) for covering the photoelectric surface and protecting the photoelectric surface from atmosphere; a transparent conductive plate(22) interposed between the transparent substrate and the photoelectric surface; and a second photoelectric substrate(23) interposed between the transparent conductive plate and the photoelectric surface. The electrons emitted from the photoelectric surface pass through the first photoelectric surface protective film by tunneling effects.
Abstract translation: 目的：提供一种具有极薄保护膜的光电阴极，通过允许在光电表面蒸发后在大气中自由进行工艺，简化工艺，降低成本，并容易制造使用大面积光电阴极的器件 。 构成：光电阴极包括透明基板（21）; 在透明基板上蒸发的光电面（24），将通过透明基板入射的光转换为电子并发射电子; 用于覆盖光电表面并保护光电表面免受大气影响的第一光电表面保护膜（25） 介于透明基板和光电表面之间的透明导电板（22）; 以及插入在透明导电板和光电表面之间的第二光电基板（23）。 从光电表面发射的电子通过隧道效应穿过第一光电表面保护膜。
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Patent Agency Ranking
公开(公告)号：KR1020020027070A
公开(公告)日：2002-04-13
申请号：KR1020000058404
申请日：2000-10-05
Applicant: 한국과학기술원
IPC: H01L31/0445 , H01L31/0224 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: PURPOSE: A method for fabricating a fine crystalline silicon thin film is provided to crystallize the silicon thin film when the silicon thin film starts to grow, by forming a seed layer without an additional crystallization process like a repeated process or annealing process. CONSTITUTION: The seed layer(3) composed of metal or metal oxide is formed on a substrate(1) before the fine crystalline silicon thin film(4) is deposited, so that the fine crystalline silicon thin film is crystallized as soon as the fine crystalline silicon thin film is deposited. A transparent conductive layer(2) or amorphous silicon layer(5) is formed on the substrate before the seed layer is formed.
Abstract translation: 目的：提供一种制造精细晶体硅薄膜的方法，当硅薄膜开始生长时，通过形成种子层，而不需要像重复的工艺或退火工艺那样的附加的结晶工艺，就可以使硅薄膜结晶。 构成：在沉积微晶硅薄膜（4）之前，在基板（1）上形成由金属或金属氧化物构成的种子层（3），使得微细晶体硅薄膜一旦结晶 沉积晶体硅薄膜。 在种子层形成之前，在基板上形成透明导电层（2）或非晶硅层（5）。
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公开(公告)号：KR100971224B1
公开(公告)日：2010-07-21
申请号：KR1020080103956
申请日：2008-10-23
Applicant: 한국과학기술원
IPC: H04L12/28
CPC classification number: H04L45/26 , H04L43/0852 , H04L43/10
Abstract: 본 발명은 인터넷 전송 경로 및 전송 지연시간 추정 시스템 및 그 방법에 관한 것으로서, 인터넷 상의 임의의 두 지점에 대한 경로와 전송 시간 추정을 위해 질의된 두 지점에 대해 AS 경로를 추정하고, 이 경로에 필요한 경로 조각을 검색하여 검색된 경로 조각을 재조합함으로써, 질의된 두 지점에 대한 추정값을 제공함에 목적이 있다.
이러한 목적을 달성하기 위한 본 발명은, 인터넷 상의 모든 목적지점에 대한 전송 지연 시간을 실측한 결과의 저장소로서, 필요한 실측 결과를 AS 번호로 검색하기 위해 실측 결과를 이루는 IP 주소들을 AS 번호로 변환하고, 각 경로 조각을 AS 번호로 인덱싱하여 저장하고 있는 인덱싱 구축수단; 사용자에 의해 질의된 두 점의 IP 주소를 AS 번호로 매핑하는 매핑수단; 상기 매핑수단을 통해 매핑한 두 AS 번호 사이의 AS 경로를 추정하는 AS 경로 추정수단; 및 추정된 AS 경로를 이루는 각 경로 조각을 검색하여 서로 연결하고 AS 경로에 해당하는 IP 경로를 재조합함으로써, 복수개의 재조합 경로와 그에 따른 전송 지연 시간을 도출하는 경로 재조합수단; 을 포함한다.
경로 조각, 전송 지연 시간, 전송 경로-
公开(公告)号：KR100387982B1
公开(公告)日：2003-06-18
申请号：KR1020000058404
申请日：2000-10-05
Applicant: 한국과학기술원
IPC: H01L31/0445 , H01L31/0224 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: PURPOSE: A method for fabricating a fine crystalline silicon thin film is provided to crystallize the silicon thin film when the silicon thin film starts to grow, by forming a seed layer without an additional crystallization process like a repeated process or annealing process. CONSTITUTION: The seed layer(3) composed of metal or metal oxide is formed on a substrate(1) before the fine crystalline silicon thin film(4) is deposited, so that the fine crystalline silicon thin film is crystallized as soon as the fine crystalline silicon thin film is deposited. A transparent conductive layer(2) or amorphous silicon layer(5) is formed on the substrate before the seed layer is formed.
Abstract translation: 目的：提供一种制造微晶硅薄膜的方法，通过形成晶种层而无需像重复工艺或退火工艺那样的附加结晶工艺，在硅薄膜开始生长时结晶硅薄膜。 组成：在淀积微晶硅薄膜（4）之前，在衬底（1）上形成由金属或金属氧化物构成的籽晶层（3），使微晶硅薄膜一旦结晶 沉积结晶硅薄膜。 在籽晶层形成之前，在衬底上形成透明导电层（2）或非晶硅层（5）。
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公开(公告)号：KR1020210039038A
公开(公告)日：2021-04-09
申请号：KR1020190121332
申请日：2019-10-01
Applicant: 한국과학기술원
IPC: H01L21/02 , H01L21/768 , H01L21/324 , H01L51/56
Abstract: 본발명은기상증착공정을이용한갭필링방법및 그장치에관한것으로, 개시제를사용하는화학기상증착(initiated Chemical Vapor Deposition; iCVD) 공정을이용하여패턴상에고분자(polymer)를증착하여갭필링(gap filling)을통해상기패턴을평탄화하는단계를포함한다.
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