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公开(公告)号：KR101068490B1
公开(公告)日：2011-09-28
申请号：KR1020100075959
申请日：2010-08-06
Applicant: 한국기계연구원
Abstract: 본 발명은 물리 기상 증착을 이용하여 기판(wafer)위에 n형 반도체 패턴과 p형 반도체 패턴을 형성하여 박막형 열전 에너지변환 모듈을 제조하는 공정에 관한 것이다.
보다 구체적으로는 열전 박막소재로 이용되는 금속화합물을 co-evaporating이나 co-sputtering 공정을 이용하여 증착함으로써 정확한 조성비를 갖는 n형 반도체 패턴과 p형 반도체 패턴으로 형성하여 열전성능이 높은 박막형 열전 에너지변환 모듈을 제조하는 공정에 관한 것이다.Abstract translation: 本发明涉及用于制造薄膜热电能量转换模块，以形成通过使用物理气相沉积一个n型半导体图案和衬底（晶片）上的p型半导体图案的工艺。
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公开(公告)号：KR101033031B1
公开(公告)日：2011-05-09
申请号：KR1020100095322
申请日：2010-09-30
Applicant: 한국기계연구원
Abstract: PURPOSE: A deformation rate measuring device is provided to measure deformation rate at high speed by using contactless measuring method. CONSTITUTION: A deformation rate measuring device comprises a light source(20), a concave mirror, and an optical sensor(21). The light source is located one side of the a fine test piece(11) with keeping a fixed distance from a diffraction grid(12). The light source emits laser beam toward the diffraction grid. The concave mirror is located between the minute test piece and light source or located on the opposite side of the light source based on the minute test piece. The optical sensor receives the laser beam, successively reflected by the diffraction grid and concave mirror, and detects the location of the laser beam A controller(30) is connected to the light source and optical sensor and computes the deformation rate of the minute test piece.
Abstract translation: 目的：提供一种变形率测量装置，通过非接触式测量方法测量高速变形率。 构成：变形率测量装置包括光源（20），凹面镜和光学传感器（21）。 光源位于精细测试片（11）的一侧，与衍射光栅（12）保持一定距离。 光源向衍射光栅发射激光束。 凹面镜位于微小测试片和光源之间，或者位于光源的相对侧，基于微小的测试片。 光学传感器接收由衍射栅格和凹面反射镜连续反射的激光束，并且检测激光束A的位置。控制器（30）连接到光源和光学传感器，并计算微小测试片的变形率 。
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公开(公告)号：KR1020110043424A
公开(公告)日：2011-04-27
申请号：KR1020100075961
申请日：2010-08-06
Applicant: 한국기계연구원
Abstract: PURPOSE: A method for manufacturing a thin film thermoelectric energy conversion module is provided to correct a height error and an arrangement error of an n type semiconductor pattern and a p type semiconductor pattern by using a solder ball when a substrate is bonded. CONSTITUTION: An insulation layer(110) and an electrode layer(120) are formed on a substrate(100). A first photoresist is formed on the electrode layer. The first photoresist is patterned. A part of the insulation layer is exposed by using the patterned first photoresist. A lift-off resistor and a second photoresist are successively formed on the exposed insulation layer. The upper side of the electrode layer is partially exposed by etching the lift-off photoresistor. A first semiconductor pattern(160a) is formed on the exposed electrode layer. A first pattern is formed by removing a second photoresist pattern and the lift-off resistor. A second pattern with a second semiconductor pattern is formed. The second semiconductor pattern is opposite to the first semiconductor pattern. A solder ball is bonded between the upper side of the first pattern and the electrode layer of the substrate with the second pattern.
Abstract translation: 目的：提供一种制造薄膜热电能转换模块的方法，用于当基片接合时通过使用焊球来校正n型半导体图案和p型半导体图案的高度误差和布置误差。 构成：在基板（100）上形成绝缘层（110）和电极层（120）。 在电极层上形成第一光致抗蚀剂。 第一光致抗蚀剂被图案化。 通过使用图案化的第一光致抗蚀剂来暴露绝缘层的一部分。 在暴露的绝缘层上依次形成剥离电阻和第二光致抗蚀剂。 通过蚀刻剥离光敏电阻来部分地暴露电极层的上侧。 在暴露的电极层上形成第一半导体图案（160a）。 通过去除第二光致抗蚀剂图案和剥离电阻器形成第一图案。 形成具有第二半导体图案的第二图案。 第二半导体图案与第一半导体图案相对。 焊料球以第二图案结合在第一图案的上侧和基板的电极层之间。
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公开(公告)号：KR1020110043423A
公开(公告)日：2011-04-27
申请号：KR1020100075960
申请日：2010-08-06
Applicant: 한국기계연구원
Abstract: PURPOSE: A method for manufacturing a thin film thermoelectric energy conversion module is provided to improve productivity by decreasing a deposition process of a plurality of insulation layers and a photoresist. CONSTITUTION: A first semiconductor pattern(160a) is formed on an exposed electrode layer. A nickel layer(170) is formed on a first semiconductor pattern through a deposition process. A tin layer that is a bonding layer is formed on the nickel layer. A first pattern is formed by removing a second photoresist pattern and a lift off resistor and forming the bonding layer on the first semiconductor pattern. A second pattern includes a second semiconductor pattern(160b) opposite to the first semiconductor pattern. The bonding layer of the second pattern is connected to the upper side of the electrode layer of the first pattern.
Abstract translation: 目的：提供一种制造薄膜热电能转换模块的方法，通过减少多个绝缘层和光致抗蚀剂的沉积工艺来提高生产率。 构成：在暴露的电极层上形成第一半导体图案（160a）。 通过沉积工艺在第一半导体图案上形成镍层（170）。 在镍层上形成作为结合层的锡层。 通过去除第二光致抗蚀剂图案和剥离电阻并在第一半导体图案上形成接合层来形成第一图案。 第二图案包括与第一半导体图案相对的第二半导体图案（160b）。 第二图案的接合层连接到第一图案的电极层的上侧。
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公开(公告)号：KR1020110043422A
公开(公告)日：2011-04-27
申请号：KR1020100075959
申请日：2010-08-06
Applicant: 한국기계연구원
Abstract: PURPOSE: A method for manufacturing a thin film thermoelectric energy conversion module is provided to prevent the deterioration of thermoelectric performance by depositing metal compound. CONSTITUTION: A first semiconductor pattern(160a) is formed on an exposed electrode layer. A nickel layer(170) is formed on the first semiconductor pattern through a deposition process. A tin layer(180) is formed on the nickel layer through the deposition process. A first pattern is formed by removing a second photo resist pattern and a lift off resistor. A second pattern with the second semiconductor pattern is formed. The first semiconductor pattern is opposite to the second semiconductor pattern. A thermoelectric energy conversion module is formed by bonding the tin layer on the upper side of the electrode layer of the first pattern.
Abstract translation: 目的：提供一种制造薄膜热电能转换模块的方法，以通过沉积金属化合物来防止热电性能的劣化。 构成：在暴露的电极层上形成第一半导体图案（160a）。 通过沉积工艺在第一半导体图案上形成镍层（170）。 通过沉积工艺在镍层上形成锡层（180）。 通过去除第二光致抗蚀剂图案和剥离电阻器形成第一图案。 形成具有第二半导体图案的第二图案。 第一半导体图案与第二半导体图案相反。 通过将第一图案的电极层的上侧上的锡层接合而形成热电能转换模块。
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Patent Agency Ranking
公开(公告)号：KR100998087B1
公开(公告)日：2010-12-03
申请号：KR1020100030075
申请日：2010-04-01
Applicant: 한국기계연구원
IPC: H05K13/04 , H01L21/677 , B65G49/07 , C08L83/04
CPC classification number: H05K13/046 , B25B11/002 , C08L83/04 , H01L21/6831
Abstract: PURPOSE: An active removable chuck is provided to control the attachment and detachment of a structure by actively controlling adhesive power. CONSTITUTION: A chuck(70) comprises a body(71), a magnetic material(73), and a soft polymer(75). The body is formed with an electromagnet. The edge of the magnetic material is fixed to one side of the body. If the body is connected to a power, the center of the magnet material is contacted with the body, and if not, the center of the magnet material is separated from the body. The soft Polymer is attached to one side of the magnetic material and includes one of poly dimethyl siloxane, silicon rubber, and butyl rubber.
Abstract translation: 目的：提供主动的可拆卸卡盘，通过主动控制粘合力来控制结构的附着和拆卸。 构成：卡盘（70）包括主体（71），磁性材料（73）和软质聚合物（75）。 主体由电磁铁形成。 磁性材料的边缘固定在身体的一侧。 如果主体与电源连接，则磁体材料的中心与主体接触，如果不是，则磁体材料的中心与主体分离。 软质聚合物附着在磁性材料的一侧，包括聚二甲基硅氧烷，硅橡胶和丁基橡胶之一。
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公开(公告)号：KR102230701B1
公开(公告)日：2021-03-22
申请号：KR1020190069765
申请日：2019-06-13
Applicant: 한국기계연구원 , 재단법인 파동에너지 극한제어 연구단
IPC: B41F16/00
Abstract: 본발명의일실시예는일정한변형구간에서동일한응력을가질수 있는제로탄성계수구간을가지는메타구조체및 제로탄성계수구간을가지는메타구조체설계방법을제공한다. 여기서, 제로탄성계수구간을가지는메타구조체는제1유닛그리고제2유닛을포함한다. 제1유닛은좌굴(Buckling) 가능한구조로형성되고, 응력변형률관계에서음의탄성계수를가지는구간을포함한다. 제2유닛은제1유닛에이웃하게배치되고, 응력변형률관계에서양의탄성계수를가지는구간을포함한다. 제1유닛의음의탄성계수와제2유닛의양의탄성계수의합성에의해, 미리설정된타깃변형구간에서제로탄성계수를가진다.
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公开(公告)号：KR102219128B1
公开(公告)日：2021-02-24
申请号：KR1020190109387
申请日：2019-09-04
Applicant: 한국기계연구원
Abstract: 본발명의일실시예는소자의피킹(Picking) 공정및 플레이싱(Placing) 공정에모두사용될수 있는전사필름, 전사필름을이용한전사방법및 이를이용하여제조되는전자제품을제공한다. 여기서, 전사필름은베이스부, 점착부그리고제1돌기부를포함한다. 점착부는베이스부의일면에구비되고, 제1돌기부는베이스부의일면에돌출형성되어점착부의내측에수용되며, 베이스부의표면에평행한제1방향으로갈수록두께가증가하는제1경사면을가지고비대칭형으로형성된다. 제1돌기부중 상대적으로두께가두꺼운일부가포함되는제1영역과, 제1돌기부중 상대적으로두께가얇은다른일부가포함되고제1영역보다점착력이약한제2영역으로구획되며, 피킹(Picking) 공정시에는제1영역이먼저들어올려지면서소자가피킹되고, 플레이싱(Placing) 공정시에는제2영역이먼저들어올려지면서소자가플레이싱된다.
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公开(公告)号：KR1020180087896A
公开(公告)日：2018-08-03
申请号：KR1020170011817
申请日：2017-01-25
Applicant: 한국기계연구원 , 재단법인 파동에너지 극한제어 연구단
Abstract: 본발명은기판에존재하는불량소자만선택적으로교체할수 있는불량소자의리페어방법및 이를위한리페어장치에관한것으로서, 본발명에따른불량소자의리페어방법은가압단계와, 불량소자제거단계와, 대체소자접합단계를포함하고, 본발명에따른불량소자의리페어장치는제1점착필름과, 가압부와, 제2점착필름을포함한다. 본발명에따른불량소자의리페어방법및 이를위한리페어장치는불량소자를제1점착필름에점착시켜떼어내고, 제2점착필름에부착된대체소자를불량소자가제거된제거위치에부착하여접합시키는것을특징으로한다.
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公开(公告)号：KR1020180040770A
公开(公告)日：2018-04-23
申请号：KR1020160132250
申请日：2016-10-12
Applicant: 한국기계연구원 , 재단법인 파동에너지 극한제어 연구단
CPC classification number: B32B9/00 , B32B9/04 , B32B15/06 , B32B15/082 , B32B25/08 , B32B27/08 , H01L21/48 , B32B9/005 , B32B9/043 , B32B9/045 , H01L21/4857 , H01L2224/95115
Abstract: 본발명은반도체, 디스플레이, 태양전지, 센서등에장착되는소자를소스기판에서타켓기판으로전사하기위한다층형캐리어필름및 이를이용한소자전사방법과이 방법을이용하여전자제품을제조하는전자제품제조방법에관한것으로서, 본발명에따른다층형캐리어필름은베이스필름과, 변형층과, 경질층을포함하고, 이를이용한소자전사방법은피킹단계와, 경화단계와, 플레이싱단계를포함한다. 본발명에따른다층형캐리어필름및 이를이용한소자전사방법은소스기판에있는소자를다층형캐리어필름에 1차적으로점착시키고, 다층형캐리어필름에구성된변형층의경도변화를통해다층형캐리어필름과소자사이의점착력을조절하여다층형캐리어필름에점착된소자를타켓기판에 2차적으로점착시키는것을특징으로한다. 또한, 본발명의다층형캐리어필름을이용한소자전사방법을이용하여전자제품을제조하는전자제품제조방법은다층형캐리어필름을이용한소자전사방법을이용하여다수의소자를평판상에전사하여전자제품을제조하는것을특징으로한다.
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