公开(公告)号：EP3454127A1

公开(公告)日：2019-03-13

申请号：EP17190433.7

申请日：2017-09-11

Applicant: ASML Netherlands B.V.

Inventor： DE WINTER, Laurentius Cornelius ,  STOLK, Roland Pieter ,  STAALS, Frank

IPC: G03F7/20 ,  G03F1/24 ,  G21K1/06

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more printed structures using a reflective patterning device onto a substrate. The reflective patterning device comprises first reticle structures and second reticle structures. A first angular reflectivity curve of the one or more first reticle structures is different from a second angular reflectivity curve of the one or more second reticle structures. The one or more printed structures comprise first printed structures corresponding to the first reticle structures and second printed structures corresponding to the second reticle structures. A focus dependent parameter related to a focus- dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based on the focus dependent parameter is derived therefrom.

公开(公告)号：EP3422102A1

公开(公告)日：2019-01-02

申请号：EP17177774.1

申请日：2017-06-26

Applicant: ASML Netherlands B.V.

Inventor： STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  YUDHISTIRA, Yasri ,  LUIJTEN, Carlo, Cornelis, Maria ,  VERSTRAETEN, Bert ,  GEMMINK, Jan-Willem

IPC: G03F7/20

Abstract: Focus metrology patterns and methods are disclosed which do not rely on subresolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424). A minimum dimension (wl) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.

公开(公告)号：EP3364247A1

公开(公告)日：2018-08-22

申请号：EP17156769.6

申请日：2017-02-17

Applicant: ASML Netherlands B.V.

Inventor： SCHMITT-WEAVER, Emil Peter ,  BHATTACHARYYA, Kaustuve ,  TEL, Wim, Tjibbo ,  STAALS, Frank ,  LEVASIER, Leon Martin

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/93

CPC classification number: G03F7/705 ,  G01N21/93 ,  G03F7/70616 ,  G03F7/7065 ,  G03F7/707 ,  G03F7/70783 ,  G03F9/7026 ,  G03F9/7034 ,  G03F9/7092

Abstract: Disclosed is a method for monitoring a lithographic process, and associated lithographic apparatus. The method comprises obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.