公开(公告)号：WO2011012412A1

公开(公告)日：2011-02-03

申请号：PCT/EP2010/059698

申请日：2010-07-07

Applicant: ASML NETHERLANDS B.V. ,  WANG, Jiun-Cheng ,  VAN HAREN, Richard ,  VAN DER SCHAAR, Maurits ,  LEE, Hyun-Woo ,  REINER, Jungblut

Inventor： WANG, Jiun-Cheng ,  VAN HAREN, Richard ,  VAN DER SCHAAR, Maurits ,  LEE, Hyun-Woo ,  REINER, Jungblut

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: An mark used in the determination of overlay error comprises sub-features (46), the sub-features having a smallest pitch approximately equal to the smallest pitch of the product features. The sensitivity to distortions and aberrations is therefore the same as that for the product features. However, when the mark is developed the sub-features merge and only the outline of the larger feature is developed.

Abstract translation: 用于确定覆盖误差的标记包括子特征（46），子特征具有近似等于产品特征的最小间距的最小间距。 因此，畸变和像差的敏感度与产品特征的敏感性相同。 然而，当标记被开发时，子特征合并，并且仅开发较大特征的轮廓。

公开(公告)号：WO2010130516A1

公开(公告)日：2010-11-18

申请号：PCT/EP2010/054820

申请日：2010-04-13

Applicant: ASML NETHERLANDS B.V. ,  COENE, Willem ,  VAN DER MAST, Karel ,  VAN DER SCHAAR, Maurits

Inventor： COENE, Willem ,  VAN DER MAST, Karel ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A method of determining an overlay error in which asymmetry of a first order of a diffraction pattern is modeled as being a weighted sum of harmonics. Both the first order harmonic and higher order harmonics are non-negligible and weights for both are calculated. The weights are calculated using three or more of sets of superimposed patterns using a least mean square method.

Abstract translation: 一种确定重叠误差的方法，其中衍射图案的一阶的不对称性被建模为加权和谐和。 一阶谐波和高次谐波都不可忽略，两者的权重都被计算出来。 使用最小均方法，使用三个或更多个叠加图案来计算权重。

公开(公告)号：WO2010034427A2

公开(公告)日：2010-04-01

申请号：PCT/EP2009/006715

申请日：2009-09-17

Applicant: ASML NETHERLANDS B.V. ,  MOS, Everhardus, Cornelis ,  VAN DER SCHAAR, Maurits ,  MIDDLEBROOKS, Scott, Anderson

Inventor： MOS, Everhardus, Cornelis ,  VAN DER SCHAAR, Maurits ,  MIDDLEBROOKS, Scott, Anderson

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70525

Abstract: A lithographic system includes a lithographic apparatus and a scatterometer. In an embodiment, the lithographic apparatus includes an illumination optical system arranged to illuminate a pattern and a projection optical system arranged to project an image of the pattern on to a substrate. In an embodiment, the scatterometer includes a measurement system arranged to direct a beam of radiation onto a target pattern on said substrate and to obtain an image of a pupil plane representative of radiation scattered from the target pattern. A computational arrangement represents the pupil plane by moment functions calculated from a pair of orthogonal basis function and correlates the moment function to lithographic feature parameters to build a lithographic system identification. A control arrangement uses the system identification to control subsequent lithographic processes performed by the lithographic apparatus.

Abstract translation: 光刻系统包括光刻设备和散射仪。 在一个实施例中，光刻设备包括布置成照亮图案的照明光学系统和布置成将图案的图像投影到基板上的投影光学系统。 在一个实施例中，散射仪包括测量系统，其布置成将辐射束引导到所述基板上的目标图案上，并且获得代表从目标图案散射的辐射的光瞳平面的图像。 计算装置表示由一对正交基函数计算的瞳孔平面，并将力矩函数与光刻特征参数相关联以构建光刻系统识别。 控制装置使用系统识别来控制由光刻设备执行的后续光刻处理。

公开(公告)号：WO2010009930A1

公开(公告)日：2010-01-28

申请号：PCT/EP2009/056431

申请日：2009-05-27

Applicant: ASML Netherlands B.V. ,  VAN DER SCHAAR, Maurits ,  VAN DE KERKHOF, Marcus ,  MUSA, Sami

Inventor： VAN DER SCHAAR, Maurits ,  VAN DE KERKHOF, Marcus ,  MUSA, Sami

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70566 ,  G03F7/70633 ,  G03F9/7065 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Measurement targets for use on substrates, and overlay targets are presented. The targets include an array of first regions alternating with second regions, wherein the first regions include structures oriented in a first direction and the second regions include structures oriented in a direction different from the first direction. The effective refractive index of the two sets of regions are thereby different when experienced by a polarized beam, which will act as a TM-polarized beam when reflected from the first set of regions, but as a TE-polarized beam when reflected from the second set of regions.

Abstract translation: 介绍了用于基板和重叠目标的测量目标。 目标包括与第二区域交替的第一区域的阵列，其中第一区域包括沿第一方向定向的结构，并且第二区域包括沿与第一方向不同的方向定向的结构。 当经过偏振光束时，两组区域的有效折射率因此不同，偏振光束当从第一组区域反射时作为TM偏振光束，但是当从第二组反射时作为TE偏振光束 一套地区。

公开(公告)号：EP3451061A1

公开(公告)日：2019-03-06

申请号：EP17189187.2

申请日：2017-09-04

Applicant: ASML Netherlands B.V.

Inventor： BARBU, Ioana Sorina ,  BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  DA COSTA ASSAFRAO, Alberto

IPC: G03F7/20 ,  G01N21/95

Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images (802) representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison (810) of the images the inspection apparatus infers the presence of process-induced stack variations between said different locations. In one application, the inspection apparatus separately measures overlay performance (0V) of the manufacturing process based on dark-field images (840), combined with previously determined calibration information (842a, 842b). The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.

公开(公告)号：EP3444676A1

公开(公告)日：2019-02-20

申请号：EP17186295.6

申请日：2017-08-15

Applicant: ASML Netherlands B.V.

Inventor： FARHADZADEH, Farzad ,  HAJIAHMADI, Mohammadreza ,  VAN DER SCHAAR, Maurits ,  BOZKURT, Murat

IPC: G03F7/20

Abstract: Disclosed is a method and associated apparatus of determining a performance parameter (e.g., overlay) of a target on a substrate, and an associated metrology apparatus. The method comprises estimating a set of narrowband measurement values from a set of wideband measurement values relating to the target and determining the performance parameter from said set of narrowband measurement values. The wideband measurement values relate to measurements of the target performed using wideband measurement radiation and may correspond to different central wavelengths. The narrowband measurement values may comprise an estimate of the measurement values which would be obtained from measurement of the target using narrowband measurement radiation having a bandwidth narrower than said wideband measurement radiation.

公开(公告)号：EP3611567A2

公开(公告)日：2020-02-19

申请号：EP19194215.0

申请日：2019-08-29

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： MEHTA, Nikhil ,  COTTAAR, Jeroen ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus Gerardus Martinus Maria ,  CRAMER, Hugo, Augustinus Joseph ,  ZWIER, Olger, Victor

IPC: G03F7/00

Abstract: Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The target patterning elements and product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that said at least one target has at least one boundary which is neither parallel nor perpendicular with respect to said product structures on said substrate.

公开(公告)号：EP3401733A1

公开(公告)日：2018-11-14

申请号：EP17169918.4

申请日：2017-05-08

Applicant: ASML Netherlands B.V.

Inventor： BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  JAK, Martin, Jacobus Johan ,  HAJIAHMADI, Mohammadreza

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70616

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As') are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

公开(公告)号：EP3394677A1

公开(公告)日：2018-10-31

申请号：EP16806123.2

申请日：2016-12-06

Applicant: ASML Netherlands B.V.

Inventor： HINNEN, Paul Christiaan ,  MATHIJSSEN, Simon Gijsbert Josephus ,  GOOSEN, Maikel Robert ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie Jeffrey

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/702 ,  G03F7/70641 ,  G03F7/70683 ,  G03F7/7085

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

公开(公告)号：EP3994526A1

公开(公告)日：2022-05-11

申请号：EP20731031.9

申请日：2020-06-04

Applicant: ASML Netherlands B.V.

Inventor： PISARENCO, Maxim ,  VAN DER SCHAAR, Maurits ,  ZHANG, Huaichen ,  VAN LARE, Marie-Claire

IPC: G03F7/20