公开(公告)号：WO2017144270A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/052680

申请日：2017-02-08

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  HASTINGS, Simon, Philip, Spencer ,  DA COSTA ASSAFRAO, Alberto ,  MACHT, Lukasz, Jerzy

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70616

Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1-, p1, p1+; λ1-, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.

Abstract translation: 检验装置（140）测量由衬底上的光刻工艺形成的目标结构（T）的不对称性或其他性质。 对于给定的一组照明条件，所述测量的准确度受整个衬底和/或衬底之间的工艺变化的强烈影响。 该设备被布置为在所述照射条件（p1-，p1，p1 +;λ1-，λ1，λ1+）的两个或更多个变体下收集由多个结构散射的辐射。 处理系统（PU）被布置为使用针对所述结构中的不同结构在所述变体的不同选择或组合下收集的辐射来导出对所述性质的测量。 变体例如可以是波长，或角度分布，或者照明条件的任何特性。 参考在不同变体中观察到的信号质量（302，Q，A）进行变体的选择和/或组合。

公开(公告)号：WO2019228738A1

公开(公告)日：2019-12-05

申请号：PCT/EP2019/061165

申请日：2019-05-01

Applicant: ASML NETHERLANDS B.V.

Inventor： DA COSTA ASSAFRAO, Alberto ,  HAJIAHMADI, Mohammadreza

IPC: G03F7/20

Abstract: Disclosed is a method of, and associated metrology apparatus for, determining a characteristic of a target on a substrate. The method comprises obtaining a plurality of intensity asymmetry measurements, each intensity asymmetry measurement relating to a target formed on the substrate and determining a sensitivity coefficient corresponding to each target, from the plurality of intensity asymmetry measurements. Using these sensitivity coefficients a representative sensitivity coefficient is determined for said plurality of targets or a subset greater than one thereof. The characteristic of the target can then be determined using the representative sensitivity coefficient. (Fig. 8)

公开(公告)号：WO2018141503A1

公开(公告)日：2018-08-09

申请号：PCT/EP2018/050344

申请日：2018-01-08

Applicant: ASML NETHERLANDS B.V.

Inventor： URBANCZYK, Adam, Jan ,  VAN DER LAAN, Hans ,  DA COSTA ASSAFRAO, Alberto ,  TSENG, Chien-Hung ,  CHEN, Jay, Jianhui

IPC: G03F7/20 ,  G01N21/47 ,  H01L21/66 ,  G01N21/956

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing (1020) measured target response spectral sequence data (1010) relating to the measurement response of actual targets (1000) to equivalent reference target response sequence data (1030) relating to a measurement response of the targets as designed; and performing (1040) a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining (1050) stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.

公开(公告)号：WO2019081200A1

公开(公告)日：2019-05-02

申请号：PCT/EP2018/077479

申请日：2018-10-09

Applicant: ASML NETHERLANDS B.V.

Inventor： JAVAHERI, Narjes ,  HAJIAHMADI, Mohammadreza ,  BOZKURT, Murat ,  DA COSTA ASSAFRAO, Alberto ,  NOOT, Marc, Johannes ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  LIAN, Jin

IPC: G03F7/20 ,  G01N21/47 ,  H01L23/544

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

公开(公告)号：WO2019042783A1

公开(公告)日：2019-03-07

申请号：PCT/EP2018/072237

申请日：2018-08-16

Applicant: ASML NETHERLANDS B.V.

Inventor： BARBU, Ioana, Sorina ,  BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  DA COSTA ASSAFRAO, Alberto

IPC: G03F7/20

Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images (802) representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison (810) of the images the inspection apparatus infers the presence of process-induced stack variations between said different locations. In one application, the inspection apparatus separately measures overlay performance (OV) of the manufacturing process based on dark-field images (840), combined with previously determined calibration information (842a, 842b). The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.

公开(公告)号：EP3451061A1

公开(公告)日：2019-03-06

申请号：EP17189187.2

申请日：2017-09-04

Applicant: ASML Netherlands B.V.

Inventor： BARBU, Ioana Sorina ,  BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  DA COSTA ASSAFRAO, Alberto

IPC: G03F7/20 ,  G01N21/95

Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images (802) representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison (810) of the images the inspection apparatus infers the presence of process-induced stack variations between said different locations. In one application, the inspection apparatus separately measures overlay performance (0V) of the manufacturing process based on dark-field images (840), combined with previously determined calibration information (842a, 842b). The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.

公开(公告)号：EP3470923A1

公开(公告)日：2019-04-17

申请号：EP17195664.2

申请日：2017-10-10

Applicant: ASML Netherlands B.V.

Inventor： JAVAHERI, Narjes ,  HAJIAHMADI, Mohammadreza ,  BOZKURT, Murat ,  DA COSTA ASSAFRAO, Alberto

IPC: G03F7/20

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.