公开(公告)号：US20190212657A1

公开(公告)日：2019-07-11

申请号：US16351771

申请日：2019-03-13

Applicant: ASML Netherlands B.V.

Inventor： Sudhir SRIVASTAVA ,  Sander Bas Roobol ,  Simon Gijsbert Josephus Mathijssen ,  Nan Lin ,  Sjoerd Nicolaas Lambertus Donders ,  Krijn Frederik Bustraan ,  Petrus Wilhelmus Smorenburg ,  Gerrit Jacobus Hendrik Brussaard

IPC: G03F7/20 ,  G01N21/956 ,  G03F1/84

CPC classification number: G03F7/7085 ,  G01N21/8806 ,  G01N21/956 ,  G02F2001/354 ,  G03F1/84 ,  G03F7/70616 ,  G03F7/7065 ,  G03F7/70883 ,  H01S3/00 ,  H01S3/0092 ,  H05G2/008

Abstract: Disclosed is a high harmonic generation (HHG) radiation source which may be used to generate measurement radiation for an inspection apparatus. In such a radiation source, a pump radiation source is operable to emit pump radiation at a high harmonic generation gas medium thereby exciting the high harmonic generation gas medium within a pump radiation interaction region so as to generate the high harmonic radiation and an ionization radiation source is operable to emit ionization radiation at the high harmonic generation gas medium to ionize a gas at an ionization region between the pump radiation interaction region and an optical output of the illumination source.

公开(公告)号：US10330606B2

公开(公告)日：2019-06-25

申请号：US15683216

申请日：2017-08-22

Applicant: ASML Netherlands B.V.

Inventor： Peter Danny Van Voorst ,  Nan Lin ,  Sander Bas Roobol ,  Simon Gijsbert Josephus Mathijssen ,  Sietse Thijmen Van Der Post

IPC: G01N21/88 ,  G03F7/20 ,  G01N21/95 ,  H05G2/00 ,  G01N21/956

Abstract: Disclosed is an inspection apparatus and associated method for measuring a target structure on a substrate. The inspection apparatus comprises an illumination source for generating measurement radiation; an optical arrangement for focusing the measurement radiation onto said target structure; and a compensatory optical device. The compensatory optical device may comprise an SLM operable to spatially modulate the wavefront of the measurement radiation so as to compensate for a non-uniform manufacturing defect in said optical arrangement. In alternative embodiments, the compensatory optical device may be located in the beam of measurement radiation, or in the beam of pump radiation used to generate high harmonic radiation in a HHG source. Where located in in the beam of pump radiation, the compensatory optical device may be used to correct pointing errors, or impart a desired profile or varying illumination pattern in a beam of the measurement radiation.

公开(公告)号：US20190004437A1

公开(公告)日：2019-01-03

申请号：US16010320

申请日：2018-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Arie Jeffrey Den Boef ,  Mohammadreza Hajiahmadi ,  Farzad Farhadzadeh

IPC: G03F7/20 ,  G01B11/27

CPC classification number: G03F7/70625 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70058 ,  G03F7/70633

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.

公开(公告)号：US10067068B2

公开(公告)日：2018-09-04

申请号：US15388463

申请日：2016-12-22

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Simon Gijsbert Josephus Mathijssen ,  Nan Lin ,  Sander Bas Roobol

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/88

Abstract: A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). The lithographic apparatus has an inspection apparatus with an illumination system that utilizes illuminating radiation with a wavelength of 2-40 nm. The illumination system includes an optical element that splits the illuminating radiation into a first and a second illuminating radiation and induces a time delay to the first or the second illuminating radiation. A detector detects the radiation that has been scattered by a target structure. The inspection apparatus has a processing unit operable to control a time delay between the first scattered radiation and the second scattered radiation so as to optimize a property of the combined first and second scattered radiation.

公开(公告)号：US20180239263A1

公开(公告)日：2018-08-23

申请号：US15961377

申请日：2018-04-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Stefan Hunsche ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

公开(公告)号：US09958791B2

公开(公告)日：2018-05-01

申请号：US15032507

申请日：2014-10-13

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Stefan Hunsche ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

CPC classification number: G03F7/70683 ,  G03F7/213 ,  G03F7/22 ,  G03F7/70466 ,  G03F7/70616 ,  G03F7/70633

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

公开(公告)号：US09778025B2

公开(公告)日：2017-10-03

申请号：US14421434

申请日：2013-07-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Erik Willem Bogaart ,  Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef

IPC: G01B11/00 ,  G03B27/32 ,  G03B27/54 ,  G03B27/74 ,  G01B11/14 ,  G03F7/20 ,  G03F9/00 ,  G01B9/02 ,  G01B11/27

CPC classification number: G01B11/14 ,  G01B9/02 ,  G01B11/27 ,  G03F7/70058 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7069 ,  G03F9/7088

Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of an alignment target comprising a periodic structure. An illumination optical system for focusing radiation into a spot on said structure. An asymmetry detection optical system receives a share of positive and negative orders of radiation diffracted by the periodic structure, and forms first and second images of said spot on first and second detectors respectively, wherein said negative order radiation is used to form the first image and said positive order radiation is used to form the second image. A processor for processing together signals from said first and second detectors representing intensities of said positive and negative orders to produce a measurement of asymmetry in the periodic structure. The asymmetry measurement can be used to improve accuracy of the position read by the alignment sensor.

公开(公告)号：US11360399B2

公开(公告)日：2022-06-14

申请号：US17277353

申请日：2019-08-27

Applicant: ASML Netherlands B.V.

Inventor： Sebastianus Adrianus Goorden ,  Simon Reinald Huisman ,  Simon Gijsbert Josephus Mathijssen ,  Henricus Petrus Maria Pellemans

IPC: G03F7/20

Abstract: Disclosed is a metrology device (1600) configured to produce measurement illumination comprising a plurality of illumination beams, each of said illumination beams being spatially incoherent or pseudo-spatially incoherent and comprising multiple pupil points in an illumination pupil of the metrology device. Each pupil point in each one of said plurality of illumination beams has a corresponding pupil point in at least one of the other illumination beams of said plurality of illumination beams thereby defining multiple sets of corresponding pupil points, and the pupil points of each set of corresponding pupil points are spatially coherent with respect to each other.

公开(公告)号：US11300883B2

公开(公告)日：2022-04-12

申请号：US16135197

申请日：2018-09-19

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan Jak ,  Simon Gijsbert Josephus Mathijssen ,  Kaustuve Bhattacharyya ,  Won-Jae Jang ,  Jinmoo Byun

IPC: G03F7/20

Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.

公开(公告)号：US11022900B2

公开(公告)日：2021-06-01

申请号：US16931002

申请日：2020-07-16

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Stefan Hunsche ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.