公开(公告)号：US20150357524A1

公开(公告)日：2015-12-10

申请号：US14827872

申请日：2015-08-17

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/46 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part.

Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 第一电极，其包括接触区域和与第一半导体层电连接的延伸部分，其中延伸部连接到接触区域; 在所述第二半导体层上的第二电极; 以及形成在所述发光半导体堆叠上并分别电连接到所述第一电极和所述第二电极的第一导电部分和第二导电部分，其中所述延伸部形成在所述第二导电部件的投影区域之外， 第一导电部分，并且接触区域被第一导电部件覆盖。

公开(公告)号：US20150255676A1

公开(公告)日：2015-09-10

申请号：US14718242

申请日：2015-05-21

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

IPC: H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a plurality of extensions formed on the first semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein one of the plurality of extensions is formed beyond a projected area of the second conductive part and not covered by the first conductive part.

Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 形成在所述第一半导体层上的多个延伸部; 以及第一导电部分和第二导电部分，其形成在所述发光半导体堆叠上并且分别电连接到所述第一半导体层和所述第二半导体层，其中所述多个延伸部中的一个形成在所述第二导电 部分未被第一导电部件覆盖。

公开(公告)号：US20140084327A1

公开(公告)日：2014-03-27

申请号：US14019303

申请日：2013-09-05

Applicant: EPISTAR CORPORATION

Inventor： Yu-Chen YANG ,  Chih-Nan LIN ,  Jung-Tsung WU ,  Chien-Fu SHEN

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/22 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device comprises: a substrate having a first side and a second side opposite to the first side; a light-emitting stack disposed on the first side and emitting a light having a main wavelength of λ nm; wherein the substrate comprises a first surface on the first side, the first surface comprising a first pattern arranged with a first period, the first pattern comprising a second pattern arranged with a second period; and the first period is greater than 6λ, and the second period is smaller than λ nm.

Abstract translation: 发光装置包括：具有第一侧和与第一侧相对的第二侧的基板; 布置在所述第一侧并发射主波长为λnm的光的发光层; 其中所述基板包括在所述第一侧上的第一表面，所述第一表面包括布置有第一周期的第一图案，所述第一图案包括以第二周期布置的第二图案; 第一周期大于6λ，第二周期小于λnm。