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公开(公告)号：US20180145223A1
公开(公告)日：2018-05-24
申请号：US15862368
申请日：2018-01-04
Applicant: EPISTAR CORPORATION
Inventor： Hong-Che CHEN , Chien-Fu SHEN , Chao-Hsing CHEN , Yu-Chen YANG , Jia-Kuen WANG , Chih-Nan LIN
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
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公开(公告)号：US20180033824A1
公开(公告)日：2018-02-01
申请号：US15727276
申请日：2017-10-06
Applicant: EPISTAR CORPORATION
Inventor： Li-Ping JOU , Yu-Chen YANG , Jui-Hung YEH
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.
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公开(公告)号：US20140084327A1
公开(公告)日：2014-03-27
申请号：US14019303
申请日：2013-09-05
Applicant: EPISTAR CORPORATION
Inventor： Yu-Chen YANG , Chih-Nan LIN , Jung-Tsung WU , Chien-Fu SHEN
IPC: H01L33/62
CPC classification number: H01L33/62 , H01L33/20 , H01L33/22 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device comprises: a substrate having a first side and a second side opposite to the first side; a light-emitting stack disposed on the first side and emitting a light having a main wavelength of λ nm; wherein the substrate comprises a first surface on the first side, the first surface comprising a first pattern arranged with a first period, the first pattern comprising a second pattern arranged with a second period; and the first period is greater than 6λ, and the second period is smaller than λ nm.
Abstract translation: 发光装置包括：具有第一侧和与第一侧相对的第二侧的基板; 布置在所述第一侧并发射主波长为λnm的光的发光层; 其中所述基板包括在所述第一侧上的第一表面，所述第一表面包括布置有第一周期的第一图案，所述第一图案包括以第二周期布置的第二图案; 第一周期大于6λ，第二周期小于λnm。
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公开(公告)号：US20180108807A1
公开(公告)日：2018-04-19
申请号：US15846773
申请日：2017-12-19
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Yu-Chen YANG , Li-Ping JOU , Hui-Chun YEH , Yi-Wen KU
CPC classification number: H01L33/38 , H01L33/0012 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
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公开(公告)号：US20170117321A1
公开(公告)日：2017-04-27
申请号：US15401850
申请日：2017-01-09
Applicant: EPISTAR CORPORATION
Inventor： Li-Ping JOU , Yu-Chen YANG , Jui-Hung YEH
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.
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Patent Agency Ranking
公开(公告)号：US20160197237A1
公开(公告)日：2016-07-07
申请号：US15067517
申请日：2016-03-11
Applicant: EPISTAR CORPORATION
Inventor： Hong-Che CHEN , Chien-Fu SHEN , Chao-Hsing CHEN , Yu-Chen YANG , Jia-Kuen WANG , Chih-Nan LIN
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
Abstract translation: 发光装置包括包括多个凹部和台面的发光半导体堆叠，所述多个凹部中的每一个包括底表面，并且所述台面包括上表面; 形成在台面的上表面上的第一电极; 分别形成在所述多个凹部的底面上的多个第二电极; 形成在所述发光半导体堆叠上并与所述第一电极接触的第一电极焊盘; 形成在所述发光半导体堆叠上并与所述多个第二电极接触的第二电极焊盘; 第一绝缘层，包括多个通道以暴露所述多个第二电极; 以及形成在所述第一绝缘层上的多个空间的第二绝缘层，其中所述多个空间被所述第一电极焊盘覆盖。
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公开(公告)号：US20150236208A1
公开(公告)日：2015-08-20
申请号：US14705453
申请日：2015-05-06
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Yu-Chen YANG , Li-Ping JOU , Hui-Chun YEH , Yi-Wen KU
CPC classification number: H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruding structures.
Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 多个突出结构; 半导体层中的多个倾斜沟槽序列并分别容纳多个突起结构; 所述第二半导体层上的电介质层和所述多个倾斜沟槽的内侧壁，其中所述电介质层包括垂直于所述半导体层序列的厚度方向的表面; 沿着所述多个倾斜沟槽的内侧壁形成并延伸到所述电介质层的表面的金属层，其中所述金属层通过所述电介质层与所述第二半导体层绝缘; 以及形成在所述多个突出结构上的第一电极。
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公开(公告)号：US20190237624A1
公开(公告)日：2019-08-01
申请号：US16382873
申请日：2019-04-12
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Yu-Chen YANG , Li-Ping JOU , Hui-Chun YEH , Yi-Wen KU
CPC classification number: H01L33/38 , H01L33/0012 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
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公开(公告)号：US20170207368A1
公开(公告)日：2017-07-20
申请号：US15474476
申请日：2017-03-30
Applicant: EPISTAR CORPORATION
Inventor： Hong-Che CHEN , Chien-Fu SHEN , Chao-Hsing CHEN , Yu-Chen YANG , Jia-Kuen WANG , Chih-Nan LIN
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
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公开(公告)号：US20170012167A1
公开(公告)日：2017-01-12
申请号：US15273439
申请日：2016-09-22
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Yu-Chen YANG , Li-Ping JOU , Hui-Chun YEH , Yi-Wen KU
CPC classification number: H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 形成在半导体层序列中的多个斜面沟槽; 分别形成在所述多个倾斜沟槽中的多个突出结构; 形成在所述第二半导体层上的电介质层和所述多个斜面沟槽的内侧壁; 插入在所述半导体层序列和所述电介质层之间的反射层; 以及沿着所述多个倾斜沟槽的内侧壁形成的金属层，其中所述电介质层，所述反射层和所述金属层重叠，所述多个突出结构和所述反射层不重叠。
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