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    SYSTEMES, PROCEDES ET DISPOSITIFS POUR COLLIMATEUR
    51.
    发明专利
    SYSTEMES, PROCEDES ET DISPOSITIFS POUR COLLIMATEUR 未知

    公开(公告)号：FR2885728A1

    公开(公告)日：2006-11-17

    申请号：FR0604124

    申请日：2006-05-10

    Applicant: GEN ELECTRIC

    Inventor： ALBAGLI DOUGLAS ,  XUE PING

    IPC: G21K1/04 ,  A61B6/06

    Abstract: Il est proposé des systèmes, des procédés et des dispositifs par lesquels un collimateur (102) possède une ou plusieurs caractéristiques physiques variables (104) qui ont pour effet de faire varier l'absorption d'énergie électromagnétique (106) depuis une faible ampleur d'absorption sur un bord antérieur (212) jusqu'à la même ampleur d'absorption que le reste du collimateur. Dans certaines formes de réalisation, le collimateur a un tranchant conique (212). La variabilité de l'absorption de l'énergie électromagnétique en différents points le long du collimateur réduit les brusques transitions de projection de l'énergie électromagnétique sur un détecteur d'énergie électromagnétique, en réduisant de ce fait les artefacts constituant des erreurs sur une image générée par le détecteur.

    52.
    发明专利
    未知

    公开(公告)号：FR2860921A1

    公开(公告)日：2005-04-15

    申请号：FR0410697

    申请日：2004-10-11

    Applicant: GEN ELECTRIC

    Inventor： LEE JI UNG ,  ALBAGLI DOUGLAS ,  POSSIN GEORGE EDWARD ,  HENNESSY WILLIAM ANDREW ,  WEI CHING YEU

    IPC: G01T1/20 ,  G02F1/136 ,  H01L21/02 ,  H01L27/14 ,  H01L27/146 ,  H01L31/09

    Abstract: Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

    54.
    发明专利
    未知

    公开(公告)号：DE69632020T2

    公开(公告)日：2004-11-18

    申请号：DE69632020

    申请日：1996-12-17

    Applicant: GEN ELECTRIC

    Inventor： WEI CHING-YEU ,  LIU JIANQIANG ,  SALISBURY ROGER STEPHEN ,  KWASNICK ROBERT FORREST ,  POSSIN GEORGE EDWARD ,  ALBAGLI DOUGLAS

    IPC: H01L21/66 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L27/146 ,  G02F1/13 ,  H01L21/48 ,  G02F1/136

    Abstract: A method of repairing an open circuit defect in a damaged address line in a thin film electronic imager device includes the steps of forming a repair area (160) on the device so as to expose the open-circuit defect in the damaged address line and then depositing a conductive material (170) to form a second conductive component and to coincidentally form a repair shunt (180) in the repair area so as to electrically bridge the defect. The step of forming the repair area includes the steps of ablating dielectric material disposed over the first conductive component (140) in the repair area, and etching the repair area so as to remove dielectric material (156) disposed over the defect in the address line in the repair area such that the surface of the address line conductive material is exposed but is not contaminated by the removal of the overlying dielectric material. A layer of photoresist is deposited over the imager device prior to forming the repair area, such that the photoresist layer is patterned during the ablating step and serves as a mask during the etch step.

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