Abstract:
A device 20 includes a substrate 22 coupled with a substrate 24 such that a volume 32 is formed between the substrates 22, 24. Contact posts 48, 50 on the substrate 22 and a cantilever beam structure 36 on the substrate 24 are located within the volume 32. The cantilever beam structure has a conductive trace 38 that is selectively contactable with the contact posts 48, 50 to yield a microelectromechanical (MEMS) switch within the volume 32. Fabrication methodology for making the contact posts 48, 50 entails forming post protrusions 68, 70 on the substrate 22 and shaping post protrusions 68, 70 so that they acquire a rounded shape. Input and output signal lines 42, 44 are constructed such that respective portions of input and output signal lines 42, 44 overly corresponding post protrusions 68, 70 and take on the shape of post protrusions 68, 70.
Abstract:
A device 20 includes substrates 22 and 24 coupled to form a volume 32 between the substrates. A surface 28 of the substrate 22 faces a surface 30 of the substrate 24. A metal-insulator-metal capacitor 34 is formed on one of the surfaces 28 and 30. A conductive element 58 spans between a top electrode 56 of the capacitor 34 and the other surface 28 and 30. Vias 64 and 66 extend through the substrate 22 and are electrically interconnected with the conductive element 58 and a bottom electrode 52 of the capacitor 34. Another device 72 includes an underpass transmission line 92 formed on a surface 80 of a substrate 74 within a volume 84 formed between the substrate 74 and another substrate 76. The line 92 underlies an integrated device 96 formed on a surface 78 of the substrate 74.
Abstract:
A power amplifier (PA) line-up (210) and a method (500) for more efficiently utilizing battery power are disclosed. PA line-up (210) includes a driver (220), a matching circuit (214), and a PA (230) coupled to a matching circuit (216), wherein matching circuit (216) is configured to be coupled to a filter (260). PA line-up (210) includes a transmission line (260) coupled to matching circuit (216) and a switch (262) configured to selectively couple driver (220) to either matching circuit (214) or matching circuit (216) such that signal (205) is capable of by-passing PA (230) when signal (205) does not need to be amplified by PA (230). Furthermore, PA line-up (210) may include a second transmission line (250) so that signal (205) is capable of by-passing a driver (220) and a PA (230) when signal (205) does not need to be amplified by driver (220) and PA (230).
Abstract:
A hybrid antenna switching system in a communications device generally includes an antenna, a first switching device, and a second switching device. The first switching device is configured to selectively couple the antenna to a first set of communication paths within the communications device, wherein the first set of communication paths includes at least one transmit path associated with a first type of wireless communication standard (e.g., a global system for communication (GSM) standard). The second switching device is configured to selectively couple the antenna to a second set of communication paths within the communications device, wherein the second set of communication paths includes at least one reception path associated with the first type of wireless communication standard. The second switching device is a micro-electromechanic system (MEMS) switch integrated with the first switching device on, for example, a common printed circuit board (PCB) or multi-chip module (MCM) substrate.
Abstract:
An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.
Abstract:
A radio frequency (“RF”) circuit configured in accordance with an embodiment of the invention is fabricated on a substrate using integrated passive device (“IPD”) process technology. The RF circuit includes at least one RF signal line section and an integrated RF coupler located proximate to the RF signal line section. The integrated RF coupler, its output and grounding contact pads, and its matching network are fabricated on the same substrate using the same IPD process technology. The integrated RF coupler provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit.
Abstract:
A micro-electro mechanical system (NEMS) device, such as a MEMS switch (100), includes a package seal (104) bonded to a substrate (102), wherein an electrode 106 (e.g., an actuation electrode associated with a switch) is provided on an inner surface (103) of the package seal (104). The MEMS switch (100) might include, for example, a central switch structure implementing a double-pole, single-throw switch using a push-pull arrangement of internal activation electrodes (106, 108). The central switch structure might include a cantilevered moveable actuation electrode (122) or an electrode supported in two or more peripheral regions.
Abstract:
A micro-electro mechanical system (MEMS) variable capacitor (varactor) generally includes a substrate (102), a first capacitive plate (112) formed on the substrate, a flexible structure (150) coupled to the substrate, a second capacitive plate (116) and a first electrode (122) formed on the flexible structure; a package seal (104) coupled to the substrate and having a second electrode (106) formed thereon, wherein the distance between the first capacitive plate and the second capacitive plate (and hence, the capacitance of the structure) is responsive to a bias voltage applied to the electrodes.
Abstract:
Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.
Abstract:
An integrated inertial sensor and pressure sensor may include a first substrate including a first surface and a second surface; at least one or more conductive layers, formed on the first surface of the first substrate; a movable sensitive element, formed by using a first region of the first substrate; a second substrate and a third substrate, the second substrate being coupled to a surface of the conductive layer, the third substrate being coupled to the second surface of the first substrate in which the movable sensitive element of the inertial sensor is formed, and the third substrate and the second substrate are respectively arranged on opposite sides of the movable sensitive element; and a sensitive film of the pressure sensor, including at least a second region of the first substrate, or including at least one of the conductive layers on the second region of the first substrate.