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    51.
    发明专利
    未知

    公开(公告)号：DE69210651D1

    公开(公告)日：1996-06-20

    申请号：DE69210651

    申请日：1992-02-25

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： POLETTO VANNI ,  MORELLI MARCO ,  MURARI BRUNO

    IPC: G05F1/56 ,  G05F1/569 ,  G05F1/59 ,  H02J9/06 ,  G05F1/595

    Abstract: A voltage regulator (30) comprising a first power switch (16) connected between the input terminal (11) and output terminal (13); a storage condenser (21) connected to the input terminal via a one-way switch (18); a second power switch (19) connected between the condenser and the input terminal; and a regulating element (17) connected to the output terminal and driving the power switches (16, 19) in such a manner as to maintain the output voltage (Vo) constant. For better distributing electric and thermal stress and improving the reliability and working life of the regulator by reducing the interference caused by switching of the two power switches, a drive device (31) is provided between the regulating element (17) and the switches (16, 19), for detecting the input voltage (VA) and the voltage of the condenser (VA'), and keeping both switches on as long as the input voltage is above two given thresholds (VTH1, VTH2), turning off the second switch (19) when the input voltage is higher than the condenser voltage (VA > VA') and below the first threshold (VA

    52.
    发明专利
    未知

    公开(公告)号：DE68914948T2

    公开(公告)日：1995-03-02

    申请号：DE68914948

    申请日：1989-11-14

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： BRAMBILLA MASSIMILIANO ,  MORELLI MARCO ,  MAGGIONI GIAMPIETRO ,  MENEGOLI PAOLO

    IPC: H01L27/04 ,  G05F3/30 ,  H01L21/822

    Abstract: This voltage reference circuit has high thermal stability and minimal bulk and comprises a transistor (Q2) defining a base-emitter junction having a voltage drop (VBE) which varies in a non-linear manner as a function of temperature and resistors (R2a-R2c) connected in series to the junction, the junction and the resistors being interposed between a ground line and the output terminal. A compensation transistor (QR) generates a compensation current which varies as a function of temperature so as to produce a voltage drop with a behavior substantially opposite to the previous voltage drop upon reaching the switching on temperature of the transistor.

    54.
    发明专利
    未知

    公开(公告)号：IT1230289B

    公开(公告)日：1991-10-18

    申请号：IT2088589

    申请日：1989-06-15

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MORELLI MARCO ,  MARCHIO' FABIO ,  CAVALLI BRUNO

    IPC: H01L27/04 ,  G05F1/10 ,  H01L21/822 ,  H01L27/06 ,  H02H3/20 ,  H02H9/04 ,  H02H

    Abstract: The device for protection comprises a zener diode voltage limiter (1) having a breakdown voltage pre-set at a value (say, 30 volts) lower than the maximum value sustainable by the protected circuit (30) in the closed condition and a quenching circuit (20) having a pre-set lag controlled by each overvoltage impulse and suitable for disactivating said voltage limiter (1) and to control the opening of said protected circuit (30) with a time lag pre-set with respect to the start of each overvoltage impulse. In succession to said voltage limiter (1) there is introduced in addition a zener diode (10) with a higher breakdown voltage, say, equal to 110 volts, which allows the limitation to such a value of any overvoltages having a very low energy content superimposed over overvoltages having limited amplitude and long duration.

    55.
    发明专利
    未知

    公开(公告)号：DE3861520D1

    公开(公告)日：1991-02-21

    申请号：DE3861520

    申请日：1988-02-23

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MURARI BRUNO ,  MORELLI MARCO

    IPC: G05F1/56 ,  G05F1/571

    Abstract: A voltage stabilizer with a minimal voltage drop designed to withstand high voltage transients comprises a "series" type voltage regulator circuit with a power transistor of n-p-n type (T'1). The collector terminal of this transistor (T'1) is connected to earth via a capacitor (C') and to the cathode of a diode (D') whose anode forms an input terminal (IN') of the stabilizer. The base terminal of the power transistor (T'1) is connected to the collector terminals of first and second transistors (T'2, T'3) of p-n-p type which have their emitter terminals connected to the cathode and the anode, respectively, of the diode (D') and their base terminals connected to circuit biasing means (D'2, D'3, G'2, G'3), Feedback control of output voltage is provided by a differential amplifier (A') and a potential divider (R'1, R'2).

    57.
    发明专利
    未知

    公开(公告)号：IT8821791D0

    公开(公告)日：1988-08-31

    申请号：IT2179188

    申请日：1988-08-31

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MENEGOLI PAOLO ,  MORELLI MARCO ,  TRICOLI FRANCESCO

    IPC: H03K3/286 ,  H03K3/289 ,  H03K23/00 ,  H01L

    Abstract: The cell comprises: a power supply (A1, D4, R9); a control transistor pair (Q2, Q3) and a storage transistor pair (Q4, Q5), each having a collector, an emitter and a base electrode, all of the collector electrodes being coupled to said current source, the emitter electrodes of the storage transistors being grounded and the emitter electrodes of the control transistors being coupled to the base electrodes of the storage transistors, the control transistor collector and base electrodes being cross- coupled and the storage transistor collector and base electrodes also being cross-coupled; respective resistors (R5, R6) coupling each the emitter electrode of a driving transistor with the collector electrode of a storage transistor; two diodes (D1, D2) back to back series coupled between the driving transistor collector electrodes; a control transistor (Q1) having a grounded emitter electrode, a collector electrode coupled to the common coupling point of the two diodes, and a base electrode operating as an input pin of the frequency divider cell.

    58.
    发明专利
    未知

    公开(公告)号：IT8883649D0

    公开(公告)日：1988-07-20

    申请号：IT8364988

    申请日：1988-07-20

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MARCHIO' FABIO ,  MORELLI MARCO ,  TRICOLI FRANCESCO

    IPC: H01L27/06 ,  H01L21/8222 ,  H02P8/12 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/64 ,  H02P

    Abstract: A circuit for recirculating the discharge current of an inductive load (L) driven from the high side of the supply at two different recirculation voltages which may be selected for implementing a slow or a fast recirculation of the current advantageously employs a single power element represented by an NPN transistor (Tr) functionally connected in parallel to the load. During a driving phase of the load a slow recirculation of the discharge current is implemented by delivering to the base of the recirculation NPN transistor a current (I) sufficient to keep it saturated. Upon switching off the load, when a fast recirculation of the discharge current through the recirculation NPN transistor (Tr) is desired, delivery of the saturating current to the base of the recirculation transistor is interrupted and the transistor remains conducting having a diode (D1) and a zener diode (Dz1) in opposition thereto connected in series between ground and the base of the recirculation NPN transistor (Tr) for permitting the recirculation at a voltage substantially equal to the sum of the voltage drop through the first diode (D1), the zener voltage and the base-emitter voltage of the recirculation NPN transistor (Tr).

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