公开(公告)号：EP0961525A4

公开(公告)日：2003-01-22

申请号：EP98938971

申请日：1998-08-25

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: G09F9/30 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/04 ,  H05B33/12 ,  H05B33/22 ,  H05B33/26 ,  G02F1/136 ,  H01L27/00 ,  H01L51/20

CPC classification number: H05B33/26 ,  H01L27/1255 ,  H01L27/3246 ,  H01L51/5253 ,  H01L51/5284 ,  H05B33/04 ,  H05B33/12 ,  H05B33/22

Abstract: An active matrix display (1) wherein each pixel (7) has a thin-film light-emitting element (40) provided with a pixel electrode (41), an organic semiconductor film (43) formed on the pixel electrode (41) and an opposing electrode (op) formed on the organic semiconductor film (43). A protective film (60) is formed on the opposing electrode (op) to cover nearly the whole surface of the substrate. The protective film (60) prevents the entrance of moisture or oxygen, thus preventing the thin-film light-emitting element (40) from being deteriorated.

Abstract translation: 在根据本发明的有源矩阵显示装置1中，每个像素7设置有像素电极41，沉积在像素电极41的上层侧的有机半导体膜43和设置在像素电极41的上层侧的薄膜发光元件40 在有机半导体膜43的上层侧形成有对置电极op。在对置电极op的上层上形成覆盖基板整个表面的保护膜60。 保护膜60防止湿气或氧气进入以抑制薄膜发光元件40的劣化

公开(公告)号：EP0989778A4

公开(公告)日：2004-07-28

申请号：EP99909206

申请日：1999-03-17

Applicant: SEIKO EPSON CORP

Inventor： SEKI SYUNICHI ,  KIGUCHI HIROSHI ,  YUDASAKA ICHIO ,  MIYAJIMA HIROO

IPC: G02B5/20 ,  G09F9/00 ,  G09F9/30 ,  G09F9/33 ,  H01L27/32 ,  H01L33/26 ,  H01L33/42 ,  H01L33/48 ,  H01L51/00 ,  H01L51/40 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22 ,  H05B1/00 ,  H01L27/00

CPC classification number: H05B33/22 ,  G02B5/201 ,  H01L27/322 ,  H01L27/3246 ,  H01L51/0005 ,  H01L51/0014 ,  H01L51/5284 ,  H01L2251/558 ,  H05B33/10 ,  Y10T428/24802

Abstract: A display, such as an EL device having little variation in film thickness between pixels, and a color filter are disclosed. Arranged on a substrate are pixels formed by an ink-jet method in regions to be coated and partitioned by banks so formed as to satisfy the formulae a⊃d/4, d/2∫b∫5d, c⊃t0, c⊃(1/2)x(d/b) where a is the width of the banks, c is the height of the banks, b is the width of the regions to be coated, d is the diameter of droplets of a liquid material for forming a thin film, and t0 is the thickness of the thin film. A method of modifying the surface is a method comprising forming banks of an organic martial on an inorganic bank forming surface, and performing a plasma processing under an excessive fluorine condition, or a method comprising performing oxygen gas plasma processing of a substrate having banks formed of an organic material, and then performing fluorine-based gas plasma processing.

Abstract translation: 一种平板显示装置的制造方法，其特征在于，在具有无机材料部分的堤岸形成面上选择性地形成至少含有有机材料的堤岸，以及由堤岸封闭的用于显示的液体薄膜材料的填充区域 以形成薄膜层，由此该方法还包括：对堤和堤形成表面执行氧气等离子体处理的第一步骤; 在第一处理之后执行氟基气体等离子体处理的第二步骤; 以及薄膜形成步骤，用液体薄膜材料填充由堤边包围的区域以形成薄膜层。

公开(公告)号：EP0855614A4

公开(公告)日：2001-12-19

申请号：EP97922043

申请日：1997-05-14

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO ,  SHIMODA TATSUYA ,  KANBE SADAO ,  MIYAZAWA WAKAO

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/205 ,  H01L21/225 ,  H01L21/288 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  G02F1/136 ,  B05C5/00 ,  C01G19/00 ,  G02F1/1343 ,  H01L21/00 ,  H01L21/312

CPC classification number: G02F1/136227 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/66765 ,  Y10T428/1064 ,  Y10T428/31663

Abstract: Liquid is applied and subjected to a heat treatment to form one thin film among an insulating thin film, a silicon thin film and a conductive thin film constituting a TFT. A substrate is spin-coated with the liquid which contains a thin film component and is supplied from the coating liquid storing part (105) of a spin-coater (102). The substrate to which the coating liquid is applied is subjected to a heat treatment by a heat treatment unit (103) to form a coating film on the substrate. If, further, the coating film is subjected to laser annealing, etc., one of the film qualities, crystallinity, denseness and adhesion is improved. If the coating liquid or resist is applied by an ink-jet method, the utilization efficiency of coating liquid can be improved and, further, a patterned coating film can be formed. A thin film device which is low in cost and has a high throughput can be obtained. By manufacturing TFTs with a manufacturing apparatus having the high utilization efficiency of the coating liquid, the initial investment and the cost of a liquid crystal display are significantly reduced.

公开(公告)号：EP1085560A4

公开(公告)日：2005-07-27

申请号：EP00912946

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： SHIMODA TATSUYA ,  MIYASHITA SATORU ,  SEKI SHUNICHI ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  TAKEUCHI YASUMASA ,  MATSUKI YASUO

IPC: C30B7/00 ,  H01L21/208 ,  C01B33/02

CPC classification number: H01L21/0242 ,  C30B7/00 ,  C30B7/005 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02628 ,  H01L21/02675

Abstract: A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as in CVD methods.

Abstract translation: 将含有不含碳的环状硅烷化合物和/或通过硼或磷改性的硅烷化合物的溶液施加到基板上，形成硅前体膜，然后通过加热将膜转变成半导体硅， /或轻度处理。 因此，与CVD方法中的真空处理不同，可以以低成本容易地制造具有作为电子材料的令人满意的特性的硅膜。

公开(公告)号：EP0989534A4

公开(公告)日：2003-07-16

申请号：EP99905257

申请日：1999-02-19

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: H01L27/32 ,  H05B33/12 ,  G09F9/00 ,  G09F9/33 ,  H01L27/00 ,  H05B33/22 ,  H05B33/26

CPC classification number: H01L27/3246 ,  H05B33/12

Abstract: An active matrix light emitting device (1) has an insulating film (80) for step cut of which the upper part overhangs as an eaves part (81) is formed between a pixel electrode (41) and a light emitting element (43) in a boundary region (71) between pixels. Therefore, even if the light emitting element (43) is astride pixels (7), a step cut (43c) is formed at the eaves part (81), and the pixels are isolated from each other. Thus, crosstalk between pixels is prevented and the display quality is improved.

公开(公告)号：EP0940796A4

公开(公告)日：2002-08-21

申请号：EP98937856

申请日：1998-08-18

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: H05B33/22 ,  G09F9/30 ,  G09F9/33 ,  H01L27/32 ,  H01L51/00 ,  H01L51/40 ,  H01L51/50 ,  H05B33/26 ,  H01L27/00 ,  H01L33/00

CPC classification number: H01L27/3246 ,  G09G3/3225 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0842 ,  G09G2320/0223 ,  H01L27/3276 ,  H01L51/0005 ,  H01L51/5284

Abstract: An active matrix display (1) in which a thick insulating film is formed surrounding an organic semiconductor film to suppress a parasitic capacitance and prevent the occurrence of breakage in the opposing electrodes formed on the upper layer of the insulating film, and which is provided with bank layers (bank) made of resist films and formed along a data line (sig) and a scanning line (gate), and an electrode (op) opposed to a thin-film light-emitting element (40) and laminated on the upper layer of a bank layer (bank), thereby to suppress the capacitance parasitic on the data line (sig). An interrupted portion (off) is formed in a bank layer (bank), and is a flat portion without having a large step caused by the bank layer (bank) and, hence, the opposing electrode (op) is not broken in this portion. When an organic semiconductor film (43) is to be formed by the ink-jet method, the liquid material jetted from the ink-jet head is blocked by the bank layer (bank).

Abstract translation: 一种有源矩阵型显示器（1），其中在有机半导体膜周围形成厚绝缘膜以抑制寄生电容并防止形成在绝缘膜的上层上的相对电极发生破损，并且该有源矩阵显示器设置有 沿着数据线（sig）和扫描线（栅极）形成的由抗蚀剂膜构成的堤层（堤岸），以及与薄膜发光元件（40）相对并叠层在上层 （bank）层，从而抑制数据线（sig）上寄生的电容。 在堤层（堤岸）中形成中断部分（断开），并且是由堤岸层（堤岸）引起的没有大台阶的平坦部分，并且因此在该部分中对电极（op）不破裂 。 当通过喷墨方法形成有机半导体膜（43）时，从喷墨头喷射的液体材料被堤层（堤岸）堵塞。

公开(公告)号：EP1087428A4

公开(公告)日：2005-07-27

申请号：EP00912945

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： SEKI SHUNICHI ,  SHIMODA TATSUYA ,  MIYASHITA SATORU ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  MATSUKI YASUO ,  TAKEUCHI YASUMASA

IPC: C23C18/06 ,  C23C18/08 ,  C23C18/12 ,  H01L21/208 ,  H01L21/336 ,  H01L31/18 ,  H01L51/00 ,  H01L51/40 ,  C01B33/02

CPC classification number: C23C18/06 ,  C08G77/60 ,  C09D183/16 ,  C23C18/08 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02636 ,  H01L29/6675 ,  H01L51/0005 ,  Y02P20/582

Abstract: A method for forming a silicon film which comprises discharging an ink composition (11) selectively onto a predetermined region of a substrate using an ink jet head (12) to form a pattern of a silicon precursor, and then subjecting the pattern to a treatment by heat and/or light to convert the silicon precursor to an amorphous silicon film or a poly-crystal silicon film. The method can be used for providing a silicon film pattern on a large area portion of a substrate with saving energy with a low cost.

Abstract translation: 含有硅前体的油墨组合物11被选择性地放电到预定区域上的衬底从喷墨头12，以形成硅前体的图案，并且经受一个热和/或光处理以将硅前体转化成在 非晶硅膜-15或多晶硅膜16的有机硅膜图案以低成本且低能量由此获得在大面积上。

公开(公告)号：EP0940797A4

公开(公告)日：2002-08-21

申请号：EP98938919

申请日：1998-08-20

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: H01L27/00 ,  H01L27/32 ,  H01L51/00 ,  H01L51/40 ,  G09F9/30 ,  H01L33/00 ,  H05B33/22

CPC classification number: H01L27/3246 ,  H01L27/3211 ,  H01L27/3276 ,  H01L51/0005 ,  H01L51/5203 ,  H01L51/5284

Abstract: An active matrix display in which a thick insulating film is preferably formed to surround an organic semiconductor film of a thin-film light-emitting element without damaging the thin-film light-emitting element, and which is provided with thick bank layers (bank) formed along the data line (sig) and the scanning line (gate) to suppress the capacitance parasitic on the data line (sig) and surround a region where the organic semiconductor film (43) of the thin-film light-emitting element (40) is formed by the ink-jet method. Here, the bank layer (bank) is constituted of a lower insulating film (61) formed of a thick inorganic material and an upper insulating film (62) formed of an organic material and laminated with a narrow width on the lower insulating film (61), so as to avoid the contact between the organic semiconductor film (41) and the upper insulating film (62).

公开(公告)号：EP0993235A4

公开(公告)日：2000-05-24

申请号：EP99907949

申请日：1999-03-16

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO

IPC: G09F9/30 ,  C30B29/64 ,  G02B5/20 ,  G02B5/22 ,  G02F1/1335 ,  H01L27/32 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/10 ,  H05B33/22

CPC classification number: H01L27/3246 ,  G02B5/201 ,  G02B5/223 ,  H01L27/3283 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/56 ,  Y10T428/24157 ,  Y10T428/24355 ,  Y10T428/249994

Abstract: A method for forming a thin film comprises repeating the step of forming an affinity bank layer (111-11n) of a material (inorganic material such as SiO2) exhibiting an affinity with a thin film material liquid (130) and the step of forming a nonaffinity bank layer (121-12n) of a material (organic material such as resist) exhibiting a nonaffinity with the thin film material liquid (130) so as to form a bank (110) of alternate affinity bank layers and nonaffinity bank layers, filling the space between the banks with the thin film material liquid (130) by an ink-jet method, and performing heat treatment so as to form thin film layers (131-13n) in order. By performing the steps, the cost necessary for affinity control is reduced, and a multilayer thin film with a uniform thickness is formed.

公开(公告)号：EP1085578A4

公开(公告)日：2005-07-27

申请号：EP00912944

申请日：2000-03-29

Applicant: SEIKO EPSON CORP

Inventor： YUDASAKA ICHIO ,  SHIMODA TATSUYA ,  SEKI SHUNICHI

IPC: G02F1/1368 ,  H01L21/208 ,  H01L21/288 ,  H01L21/316 ,  H01L21/336 ,  H01L29/12 ,  C01G9/00 ,  C01G45/00 ,  C01G51/00

CPC classification number: H01L29/66765 ,  G02F1/1368 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/288 ,  H01L21/316 ,  H01L27/1292 ,  H01L29/66757

Abstract: All or part of thin film, such as silicon film, insulating film and a conducting film, which composes a thin-film transistor are formed using liquid materials. Coating of liquid material on a substrate is heat-treated to form desired thin film. This method allows use of low-cost equipment, thus reducing the manufacturing costs of thin-film transistors.