公开(公告)号：JP2005327826A

公开(公告)日：2005-11-24

申请号：JP2004142996

申请日：2004-05-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASANO TAKEHARU ,  AGAWA KEIGO ,  IKEDA MASAO

IPC: H01S5/40

Abstract: PROBLEM TO BE SOLVED: To provide an integrated semiconductor laser device capable of sufficiently approximating the luminescence point of a GaN system semiconductor laser to the luminescence point of an AlGaInP system semiconductor laser for DVD. SOLUTION: The integrated semiconductor laser device is provided with a semiconductor laser LD1 having a semiconductor layer on a first conductive substrate 11 and provided with the light emitting wavelength of λ 1 ; a semiconductor laser LD2 having a semiconductor layer on a second conductive substrate 13 and provided with the light emitting wavelength of λ 2 ; and a semiconductor laser LD3 having a semiconductor layer on a third conductive substrate 13, provided with a semiconductor laser LD3, and provided with the light emitting wavelength of λ 3 (λ 1 2 3 ). In such an integration type semiconductor laser device, the first conductive substrate 11 side of the semiconductor laser LD1 is bonded onto a supporting substrate 10, while the semiconductor layer side of the semiconductor laser LD2 and the semiconductor layer side of the semiconductor laser LD3 are bonded onto the semiconductor layer of the semiconductor laser LD1. An interval between the luminescence point P 1 of the semiconductor laser LD1 and the luminescence point P 2 of the semiconductor laser LD2 is specified so as to be less than 10μm. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够将GaN系半导体激光器的发光点充分接近于用于DVD的AlGaInP系统半导体激光器的发光点的集成半导体激光器件。 解决方案：集成半导体激光器件在第一导电衬底11上设置半导体激光器LD1，半导体激光器LD1具有半导体层，并具有λ 1的发光波长。 半导体激光器LD2，其在第二导电基板13上具有半导体层，并具有发光波长λ 2 ; 以及具有半导体层的半导体激光器LD3，具有设置有半导体激光器LD3的第三导电基板13，并具有λ 3 （λ 1 <λ 2 <λ 3 ）。 在这种集成型半导体激光器件中，将半导体激光器LD1的第一导电基板11侧接合到支撑基板10上，半导体激光器LD2的半导体层侧和半导体激光器LD3的半导体层侧接合 到半导体激光器LD1的半导体层上。 半导体激光器LD1的发光点P 1 与半导体激光器LD2的发光点P 2 之间的间隔被规定为小于10μm。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005116659A

公开(公告)日：2005-04-28

申请号：JP2003346625

申请日：2003-10-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： FUJIMOTO TSUTOMU ,  IKEDA MASAO ,  TAKEYA MOTONOBU ,  AGAWA KEIGO

IPC: H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser element having a structure in which a parasitic capacity can be reduced. SOLUTION: The semiconductor laser element 10 has at least a lower clad layer 16, an active layer 20, and an upper clad layer 24. The upper clad layer 24 has the double-layer structure of a lower layer 24A and an upper layer 24B having a ridge structure. An electrode 30 is formed on the upper layer 24B of the upper clad layer, and an insulating film 40 (41 and 42) is formed on both side faces of the upper layer 24B of the upper clad layer and the top face of the lower layer 24A of the upper clad layer extended from each of these side faces. A pad electrode 32, brought into contact with the electrode 30 and extended on the insulating film 40, is formed, and the insulating film 40 is composed of a multilayer structure film containing a silicon film 42. The overall thickness T TOTAL of the insulating film 40 ranges from 1.2×10 -7 m to 2.0×10 -6 m, and the width W PAD of the pad electrode 32 ranges from 1.0×10 -5 m to 1.4×10 -4 m. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有可以减小寄生电容的结构的半导体激光元件。 解决方案：半导体激光元件10至少具有下包层16，有源层20和上覆层24.上覆层24具有下层24A和上层24A的双层结构。 层24B具有脊结构。 在上包层的上层24B上形成电极30，在上包层的上层24B和下层的顶面的两侧面上形成绝缘膜40（41和42） 24E从上侧覆盖层延伸出来。 形成与电极30接触并在绝缘膜40上延伸的焊盘电极32，并且绝缘膜40由含有硅膜42的多层结构膜构成。总厚度T SB TOTAL < 绝缘膜40的尺寸范围为1.2×10 -7 m至2.0×10 -6 ，宽度W PAD 焊盘电极32的范围为1.0×10 -5 m至1.4×10 SP-4。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004356609A

公开(公告)日：2004-12-16

申请号：JP2003281647

申请日：2003-07-29

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： NAKAYAMA MASAHIRO ,  MATSUMOTO NAOKI ,  TAMAMURA KOJI ,  IKEDA MASAO

IPC: B24B37/00 ,  C30B29/38 ,  H01L21/20 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

Abstract: PROBLEM TO BE SOLVED: To provide a GaAs independence substrate that has a diameter of 45 mm or more, is free from warpage, and is excellent in flatness and smoothness. SOLUTION: In stock removal polishing, a GaN substrate 2 is polished under no load by lifting an upper turntable 3 so that the warpage of the GaN substrate 2 is R≥50 m. In precision polishing, the GaN substrate is chemically polished by using potassium peroxodisulfate, potassium hydroxide, and ultraviolet rays. In combination with mechanical polishing using loose abrasives, chemical mechanical polishing (CMP) of the GaN substrate can be performed. Thus, the top and bottom surfaces have roughnesses of 0.1 nm≤RMS≤0.5 nm and 0.1 nm≤RMS≤2 nm respectively. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004281431A

公开(公告)日：2004-10-07

申请号：JP2003066593

申请日：2003-03-12

Applicant: Nichia Chem Ind Ltd ,  Sony Corp ,  ソニー株式会社 ,  日亜化学工業株式会社

Inventor： SUGIMOTO YASUNOBU ,  YONEDA AKINORI ,  TAKEYA MOTONOBU ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element in which the contact resistance between the electrode and the semiconductor layer is small and, in addition, the adhesion between the electrode and layer is good even when the laser element is driven by feeding a large current, and which has an extremely excellent adhesion and mechanical strength at the interface between an insulating film and the electrode and such laser element characteristics that light confinement is stable in the electrode in the striped direction of a ridge, and to provide a method of manufacturing the laser element.
SOLUTION: In this nitride semiconductor laser element, a ridge structure is formed in a laminated nitride semiconductor. This laser element is provided with an insulating film 113 formed in a state where the film 113 is extended from the side face of a ridge onto the flat surface of a continuously formed semiconductor layer and a p-side electrode 120 covering the top surface of the ridge and insulating film 113. The electrode 120 has a metal layer composed of the element of the platinum group in its area which is in contact with the insulating film 113 and a single crystal of the element of the platinum group in its interface which is in contact with the insulating film 113.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004253545A

公开(公告)日：2004-09-09

申请号：JP2003041277

申请日：2003-02-19

Applicant: Nichia Chem Ind Ltd ,  Sony Corp ,  ソニー株式会社 ,  日亜化学工業株式会社

Inventor： SUGIMOTO YASUNOBU ,  YONEDA AKINORI ,  UCHIDA SHIRO ,  IKEDA MASAO ,  TAKEYA MOTONOBU

IPC: C23F4/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To manufacture a nitride semiconductor element in which contact resistance with a semiconductor layer is low, and which is superior in a life characteristic without deterioration at the time of driving, in a manufacturing method of the nitride semiconductor element by performing etching of a self-alignment system.
SOLUTION: The manufacturing method of the nitride semiconductor element includes an etching process for laminating a metal layer having a first layer 205a and a second layer 205b which is brought into contact with the first layer and is formed of a platinum group element on a surface of the semiconductor layer, and removing a part of a semiconductor layer exposed from the metal layer. The first layer 205a is composed of a material that can be alloyed. The method has an alloying process for alloying the first layer 205a after the metal layer is laminated and a reaction product removing process for removing reaction products 212 formed at end faces of the first layer 205a by the alloying process and/or the etching process.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003298193A

公开(公告)日：2003-10-17

申请号：JP2003127745

申请日：2003-05-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： IKEDA MASAO

IPC: H01S5/40 ,  H01S5/022 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting device, and an optical device employing it, in which fabrication can be facilitated and the exit position of light can be controlled accurately.
SOLUTION: A first light emitting element 90 and a second light emitting element 30 are formed on one side of an insulating supporting basic body 17. The first light emitting element 90 has an active layer 23 on the supporting basic body 17 side of a first sapphire substrate 91. The second light emitting element 30 is provided with laser oscillating parts 40 and 50 on the supporting basic body 11 side of a second GaAs substrate 31. Since the first substrate 91 is composed of a material transparent in the visible region, emission regions of the first light emitting element 90 and the second light emitting element 30 can be controlled accurately.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种发光器件及其使用的光学器件，其中可以方便地制造并且可以精确地控制光的出射位置。 解决方案：第一发光元件90和第二发光元件30形成在绝缘支撑基体17的一侧上。第一发光元件90在支撑基体17侧具有活性层23 第一蓝宝石基板91.第二发光元件30在第二GaAs基板31的支撑基体11侧上设置有激光振荡部40,50。由于第一基板91由可见光区域透明的材料构成 可以精确地控制第一发光元件90和第二发光元件30的发射区域。 版权所有（C）2004，JPO

公开(公告)号：JP2003289176A

公开(公告)日：2003-10-10

申请号：JP2002261410

申请日：2002-09-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAKEYA MOTONOBU ,  ASANO TAKEHARU ,  IKEDA MASAO

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01L33/007 ,  H01L33/02 ,  H01L33/04 ,  H01S5/0213 ,  H01S5/2004 ,  H01S5/3216 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that can be reduced in operating voltage while the thickness of a p-side clad layer is maintained at a value required for obtaining satisfactory optical characteristics. SOLUTION: This semiconductor light emitting element, for example, a semiconductor laser uses a III-V nitride-based compound semiconductor having a structure in which an active layer 7 is held between n- and p-side clad layers. In this element, the p-side clad layer is constituted of, for example, an undoped or n-type first layer 9 and a p-type second layer 12 doped with a p-type impurity in this order from the active layer 7 side. The thickness of the first layer 9 is adjusted to ≥50 nm. Into the p-type second layer 12, a p-type third layer 11 having a larger band gap than the layer 12 has is inserted as an electron blocking layer. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供可以降低工作电压的半导体发光元件，同时p侧覆层的厚度保持在获得令人满意的光学特性所需的值。 解决方案：该半导体发光元件例如半导体激光器使用具有活性层7保持在n侧和p侧覆盖层之间的结构的III-V族氮化物系化合物半导体。 在该元件中，p侧包层由有源层7侧依次构成例如未掺杂或n型第一层9和掺杂有p型杂质的p型第二层12 。 将第一层9的厚度调节至≥50nm。 插入到p型第二层12中，具有比层12具有更大带隙的p型第三层11作为电子阻挡层被插入。 版权所有（C）2004，JPO

公开(公告)号：JP2003069152A

公开(公告)日：2003-03-07

申请号：JP2002168293

申请日：2002-06-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOJO TAKESHI ,  HINO TOMOKIMI ,  ANZAI SHINICHI ,  GOTO OSAMU ,  YABUKI YOSHIBUMI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

CPC classification number: H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

Abstract: PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser element where the light output of each beam is uniform and alignment is easy.
SOLUTION: The multibeam semiconductor laser element 40 is a GaN-based multibeam semiconductor laser element having four laser stripes 42A to D for emitting laser beams with the same wavelength. Each laser stripe has a p-side common electrode 48 on a mesa 46 formed on a sapphire substrate 44, and has each of active regions 50A to D. Two n-side electrodes 52A and B are provided in a contact layer 54 by the mesa as a common counter electrode opposite to the p-side electrode 48. Distance A between the laser stripes 42A and 42D should be 100 μm or less. Distance B
1 between the laser stripe 42A and the laser side end section of the n-side electrode 52B should be 150 μm or less, and distance B
2 between the laser stripe 42D and the laser side end section of the n-side electrode 52B should be 150 μm or less.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种多光束半导体激光元件，其中每个光束的光输出均匀并且对准容易。 解决方案：多光束半导体激光元件40是具有四个用于发射具有相同波长的激光束的激光条42A至D的GaN基多光束半导体激光元件。 每个激光条纹在形成在蓝宝石衬底44上的台面46上具有p侧公共电极48，并且具有有源区域50A至D.两个n侧电极52A和B通过台面设置在接触层54中 作为与p侧电极48相对的通用对置电极。激光条42A，42D之间的距离A应为100μm以下。 激光条42A和n侧电极52B的激光侧端部之间的距离B1应为150μm以下，并且激光条42D与n侧电极52B的激光侧端部之间的距离B2应为 150μm以下。

公开(公告)号：JP2002374029A

公开(公告)日：2002-12-26

申请号：JP2001182304

申请日：2001-06-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YABUKI YOSHIBUMI ,  HINO TOMOKIMI ,  GOTO OSAMU ,  ANZAI SHINICHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/022 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

Abstract: PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser device, which can be produced easily, is provided with a configuration for easy diversification and further can be applied to a GaN semiconductor laser device.
SOLUTION: A multibeam semiconductor laser device 10 is composed of semiconductor laser elements 12A and 12B and a submount 14 for mounting the semiconductor laser elements. Each of semiconductor laser elements is provided with a laser stripe 18 on a mesa 16 and has a p-side electrode 20, on a ridge stripe and an n-side electrode 22 on a contact layer by the side of the mesa. A submount is provided with a first junction electrode 24 to be bonded with the p-side electrode 20, while being mutually electrically insulated and a second junction electrode 26 to be bonded with the n-side electrode 22 on a jointing surface 14a with the semiconductor laser elements. The first junction electrode 24 and the second junction electrode 26 are formed from an Al wiring layer and a solder layer. The multi-beam semiconductor laser element provided with a plurality of laser stripes can be formed by bonding the p-side electrode and the first junction electrode, bonding the n-side electrode and the second junction electrode and mounting the semiconductor laser elements on the submount by a junction-down system.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了提供容易制造的多光束半导体激光装置，具有易于多样化的结构，并且还可以应用于GaN半导体激光装置。 解决方案：多光束半导体激光装置10由半导体激光元件12A和12B以及用于安装半导体激光元件的基座14组成。 每个半导体激光元件在台面16上设置有激光条18，并且在脊条上具有p侧电极20，并且在台面侧的接触层上具有n侧电极22。 副基座设置有与p侧电极20接合的第一接合电极24，同时电绝缘，并且在与半导体的接合表面14a上与n侧电极22接合的第二接合电极26 激光元件。 第一接合电极24和第二接合电极26由Al布线层和焊料层形成。 设置有多个激光条纹的多光束半导体激光元件可以通过将p侧电极和第一接合电极接合而形成，将n侧电极和第二接合电极接合并将半导体激光元件安装在副安装座 通过结合系统。

公开(公告)号：JP2001196699A

公开(公告)日：2001-07-19

申请号：JP2000010057

申请日：2000-01-13

Applicant: SONY CORP

Inventor： TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  ASANO TAKEHARU ,  IKEDA MASAAKI ,  HINO TOMOKIMI ,  SHIBUYA KATSUYOSHI

IPC: H01L21/20 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element with a III-V family nitride semiconductor layer of superb crystallizability while preventing warp of a substrate. SOLUTION: A III-V family nitride semiconductor layer 20 as thick as 8 μm or less is provided on a substrate 11 made of sapphire, thus reducing the warp of the substrate 11 due to the difference in the thermal coefficient of expansion and the lattice constant between the substrate 11 and the III-V family nitride semiconductor layer 20. An n-side contact layer 23 composing the III-V family nitride semiconductor layer 20 partially has a lateral growth region that is grown in a lateral direction from a crystal 22A of a seed crystal layer 22. The lateral growth region has low dislocation density and hence crystallizability at a part corresponding to the lateral growth region of each layer being formed on the n-side contact layer 23 is high.