Abstract:
PROBLEM TO BE SOLVED: To provide an integrated semiconductor laser device capable of sufficiently approximating the luminescence point of a GaN system semiconductor laser to the luminescence point of an AlGaInP system semiconductor laser for DVD. SOLUTION: The integrated semiconductor laser device is provided with a semiconductor laser LD1 having a semiconductor layer on a first conductive substrate 11 and provided with the light emitting wavelength of λ 1 ; a semiconductor laser LD2 having a semiconductor layer on a second conductive substrate 13 and provided with the light emitting wavelength of λ 2 ; and a semiconductor laser LD3 having a semiconductor layer on a third conductive substrate 13, provided with a semiconductor laser LD3, and provided with the light emitting wavelength of λ 3 (λ 1 2 3 ). In such an integration type semiconductor laser device, the first conductive substrate 11 side of the semiconductor laser LD1 is bonded onto a supporting substrate 10, while the semiconductor layer side of the semiconductor laser LD2 and the semiconductor layer side of the semiconductor laser LD3 are bonded onto the semiconductor layer of the semiconductor laser LD1. An interval between the luminescence point P 1 of the semiconductor laser LD1 and the luminescence point P 2 of the semiconductor laser LD2 is specified so as to be less than 10μm. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor laser element having a structure in which a parasitic capacity can be reduced. SOLUTION: The semiconductor laser element 10 has at least a lower clad layer 16, an active layer 20, and an upper clad layer 24. The upper clad layer 24 has the double-layer structure of a lower layer 24A and an upper layer 24B having a ridge structure. An electrode 30 is formed on the upper layer 24B of the upper clad layer, and an insulating film 40 (41 and 42) is formed on both side faces of the upper layer 24B of the upper clad layer and the top face of the lower layer 24A of the upper clad layer extended from each of these side faces. A pad electrode 32, brought into contact with the electrode 30 and extended on the insulating film 40, is formed, and the insulating film 40 is composed of a multilayer structure film containing a silicon film 42. The overall thickness T TOTAL of the insulating film 40 ranges from 1.2×10 -7 m to 2.0×10 -6 m, and the width W PAD of the pad electrode 32 ranges from 1.0×10 -5 m to 1.4×10 -4 m. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a GaAs independence substrate that has a diameter of 45 mm or more, is free from warpage, and is excellent in flatness and smoothness. SOLUTION: In stock removal polishing, a GaN substrate 2 is polished under no load by lifting an upper turntable 3 so that the warpage of the GaN substrate 2 is R≥50 m. In precision polishing, the GaN substrate is chemically polished by using potassium peroxodisulfate, potassium hydroxide, and ultraviolet rays. In combination with mechanical polishing using loose abrasives, chemical mechanical polishing (CMP) of the GaN substrate can be performed. Thus, the top and bottom surfaces have roughnesses of 0.1 nm≤RMS≤0.5 nm and 0.1 nm≤RMS≤2 nm respectively. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element in which the contact resistance between the electrode and the semiconductor layer is small and, in addition, the adhesion between the electrode and layer is good even when the laser element is driven by feeding a large current, and which has an extremely excellent adhesion and mechanical strength at the interface between an insulating film and the electrode and such laser element characteristics that light confinement is stable in the electrode in the striped direction of a ridge, and to provide a method of manufacturing the laser element. SOLUTION: In this nitride semiconductor laser element, a ridge structure is formed in a laminated nitride semiconductor. This laser element is provided with an insulating film 113 formed in a state where the film 113 is extended from the side face of a ridge onto the flat surface of a continuously formed semiconductor layer and a p-side electrode 120 covering the top surface of the ridge and insulating film 113. The electrode 120 has a metal layer composed of the element of the platinum group in its area which is in contact with the insulating film 113 and a single crystal of the element of the platinum group in its interface which is in contact with the insulating film 113. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To manufacture a nitride semiconductor element in which contact resistance with a semiconductor layer is low, and which is superior in a life characteristic without deterioration at the time of driving, in a manufacturing method of the nitride semiconductor element by performing etching of a self-alignment system. SOLUTION: The manufacturing method of the nitride semiconductor element includes an etching process for laminating a metal layer having a first layer 205a and a second layer 205b which is brought into contact with the first layer and is formed of a platinum group element on a surface of the semiconductor layer, and removing a part of a semiconductor layer exposed from the metal layer. The first layer 205a is composed of a material that can be alloyed. The method has an alloying process for alloying the first layer 205a after the metal layer is laminated and a reaction product removing process for removing reaction products 212 formed at end faces of the first layer 205a by the alloying process and/or the etching process. COPYRIGHT: (C)2004,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a light emitting device, and an optical device employing it, in which fabrication can be facilitated and the exit position of light can be controlled accurately. SOLUTION: A first light emitting element 90 and a second light emitting element 30 are formed on one side of an insulating supporting basic body 17. The first light emitting element 90 has an active layer 23 on the supporting basic body 17 side of a first sapphire substrate 91. The second light emitting element 30 is provided with laser oscillating parts 40 and 50 on the supporting basic body 11 side of a second GaAs substrate 31. Since the first substrate 91 is composed of a material transparent in the visible region, emission regions of the first light emitting element 90 and the second light emitting element 30 can be controlled accurately. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that can be reduced in operating voltage while the thickness of a p-side clad layer is maintained at a value required for obtaining satisfactory optical characteristics. SOLUTION: This semiconductor light emitting element, for example, a semiconductor laser uses a III-V nitride-based compound semiconductor having a structure in which an active layer 7 is held between n- and p-side clad layers. In this element, the p-side clad layer is constituted of, for example, an undoped or n-type first layer 9 and a p-type second layer 12 doped with a p-type impurity in this order from the active layer 7 side. The thickness of the first layer 9 is adjusted to ≥50 nm. Into the p-type second layer 12, a p-type third layer 11 having a larger band gap than the layer 12 has is inserted as an electron blocking layer. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser element where the light output of each beam is uniform and alignment is easy. SOLUTION: The multibeam semiconductor laser element 40 is a GaN-based multibeam semiconductor laser element having four laser stripes 42A to D for emitting laser beams with the same wavelength. Each laser stripe has a p-side common electrode 48 on a mesa 46 formed on a sapphire substrate 44, and has each of active regions 50A to D. Two n-side electrodes 52A and B are provided in a contact layer 54 by the mesa as a common counter electrode opposite to the p-side electrode 48. Distance A between the laser stripes 42A and 42D should be 100 μm or less. Distance B 1 between the laser stripe 42A and the laser side end section of the n-side electrode 52B should be 150 μm or less, and distance B 2 between the laser stripe 42D and the laser side end section of the n-side electrode 52B should be 150 μm or less. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser device, which can be produced easily, is provided with a configuration for easy diversification and further can be applied to a GaN semiconductor laser device. SOLUTION: A multibeam semiconductor laser device 10 is composed of semiconductor laser elements 12A and 12B and a submount 14 for mounting the semiconductor laser elements. Each of semiconductor laser elements is provided with a laser stripe 18 on a mesa 16 and has a p-side electrode 20, on a ridge stripe and an n-side electrode 22 on a contact layer by the side of the mesa. A submount is provided with a first junction electrode 24 to be bonded with the p-side electrode 20, while being mutually electrically insulated and a second junction electrode 26 to be bonded with the n-side electrode 22 on a jointing surface 14a with the semiconductor laser elements. The first junction electrode 24 and the second junction electrode 26 are formed from an Al wiring layer and a solder layer. The multi-beam semiconductor laser element provided with a plurality of laser stripes can be formed by bonding the p-side electrode and the first junction electrode, bonding the n-side electrode and the second junction electrode and mounting the semiconductor laser elements on the submount by a junction-down system. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor element with a III-V family nitride semiconductor layer of superb crystallizability while preventing warp of a substrate. SOLUTION: A III-V family nitride semiconductor layer 20 as thick as 8 μm or less is provided on a substrate 11 made of sapphire, thus reducing the warp of the substrate 11 due to the difference in the thermal coefficient of expansion and the lattice constant between the substrate 11 and the III-V family nitride semiconductor layer 20. An n-side contact layer 23 composing the III-V family nitride semiconductor layer 20 partially has a lateral growth region that is grown in a lateral direction from a crystal 22A of a seed crystal layer 22. The lateral growth region has low dislocation density and hence crystallizability at a part corresponding to the lateral growth region of each layer being formed on the n-side contact layer 23 is high.