Information processing apparatus and method therefor, recording medium and program
    51.
    发明专利
    Information processing apparatus and method therefor, recording medium and program 审中-公开
    信息处理设备及其方法,记录介质和程序

    公开(公告)号:JP2006041885A

    公开(公告)日:2006-02-09

    申请号:JP2004218530

    申请日:2004-07-27

    Abstract: PROBLEM TO BE SOLVED: To enable persons at remote places to synchronously view the same contents. SOLUTION: When a user A performs an operation of the start of content reproduction at a time t1, for example, a reproduction start schedule time t2 is decided in consideration of a line delay at the time of transmitting operation information, and operation information indicating that the operation of reproduction start is performed and indicating a reproduction start time t2 and a reproduction position of the content at the time t2 is generated and transmitted to a user X side. Then, on the user A side, the content reproduction starts at the time t2. Also, on the user X side, when the reproduction start schedule time t2 indicated by the received operation information comes, the content reproduction starts at the content reproduction position indicated by the received operation information. Accordingly, after the time t2, it turns out to a state that the content is synchronously reproduced. This apparatus is applicable to a communication apparatus between remote places, for example. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:使远程人员能够同步查看相同的内容。 解决方案:当用户A在时间t1执行内容再现开始的操作时,例如,考虑到发送操作信息时的行延迟来决定再现开始调度时间t2,并且操作 指示执行再现开始的操作的指示并且指示再现开始时间t2,并且生成时间t2的内容的再现位置并将其发送到用户X侧。 然后,在用户A侧,在时间t2开始内容再现。 此外,在用户X侧,当由接收到的操作信息指示的再现开始调度时间t2到来时,在由接收的操作信息指示的内容再现位置开始内容再现。 因此,在时间t2之后,结果是内容被同步再现的状态。 该装置例如适用于偏远地点之间的通信装置。 版权所有(C)2006,JPO&NCIPI

    STEREOSCOPIC ENDOSCOPE
    53.
    发明专利

    公开(公告)号:JP2000131622A

    公开(公告)日:2000-05-12

    申请号:JP30582998

    申请日:1998-10-27

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a stereoscopic endoscope easily small-sized and low in cost by alternately supplying power to a pair of light sources for lighting capable of separately lighting an object to be imaged by a video-camera from oblique both sides. SOLUTION: Power is alternately supplied to a pair of the light sources LG1 and LG2 by a power circuit PS, switches SW1 and SW2 and a control circuit CTL. Then it is repeated that the object OB is sometimes lighted from the oblique right side facing the object OB by the light source for lighting LG1 and on another occasion, the object OB is lighted from the oblique left side facing the object OB by the light source LG1 for lighting. An imaging signal from the camera CM is supplied to a signal processor SP through a cable LC to be signal-processed to obtain a color picture signal and the color picture signal is supplied to a monitor image receptor MR to picture the stereoscopic image of the object OB. Thus the endoscope uses only one camera to be easily small-sized.

    IMAGE DISPLAY DEVICE
    54.
    发明专利

    公开(公告)号:JP2000101943A

    公开(公告)日:2000-04-07

    申请号:JP27312598

    申请日:1998-09-28

    Applicant: SONY CORP

    Inventor: KAMATA MIKIO

    Abstract: PROBLEM TO BE SOLVED: To provide an image display device which can suppress adverse effects due to the images displayed on a screen to every operator. SOLUTION: This display device includes an extraction means 10, which extracts the effect factors contained in the inputted image information I an given to having organisms, a setting means 20 which sets an acceptable levels with respect to those extracted effect factors, a level conversion means 30 which converts the levels of affecting factors contained in the information I according to the acceptable levels set by the means 20 and a display means 40, which displays the information I after the levels of affecting factors are converted by the means 30.

    WILL COMMUNICATION METHOD/SYSTEM
    55.
    发明专利

    公开(公告)号:JPH1185758A

    公开(公告)日:1999-03-30

    申请号:JP24310397

    申请日:1997-09-08

    Applicant: SONY CORP

    Inventor: KAMATA MIKIO

    Abstract: PROBLEM TO BE SOLVED: To improve universality at the time of communicating will by eliminating a fault at the time of constructing a will communication system by means of a computer, to make information expression correspond to parallel information, to reduce redundancy, to eliminate the omission of the description of information and to effectively use logic operation ability. SOLUTION: On a transmission side, a will communication content shown by language peculiar to the transmission side is inputted to a language input device 22. Inputted language is converted into code information shown as sentence structure common to multiple languages by an automatic translator 24. At the time of constituting sentence structure, plural code information corresponding to the will communication contents are associated and the sentence structure is analyzed so as to convert it into a form where redundancy and logic contradiction are removed. On a reception side, the will communication content from the transmission side, which is transmitted as code information from the information medium 2 is converted into language peculiar to the reception side by an automatic translator 25 converting sentence structure into language peculiar to the reception side.

    HIGH ELECTRON MOBILITY FIELD-EFFECT TRANSISTOR

    公开(公告)号:JPH04342142A

    公开(公告)日:1992-11-27

    申请号:JP14072291

    申请日:1991-05-17

    Applicant: SONY CORP

    Abstract: PURPOSE:To restrain a leak current caused by contact, etc., between a gate wiring layer (gate metal) and a channel layer. CONSTITUTION:A GaInAs layer 3 as a channel layer and an AlInAs layer 4 as an electron supply layer are laminated in an island-like region. A gate wiring layer 7 formed in a gate formation surface 9 is extended to a high position to have a projection part 8 from an end part 6 of the island-like region. Therefore, a void part 10 is formed between the end part 6 and the gate wiring layer 7. A leak current is thereby reduced.

    METHOD OF GROWING COMPOUND SEMICONDUCTOR

    公开(公告)号:JPH04302139A

    公开(公告)日:1992-10-26

    申请号:JP6673791

    申请日:1991-03-29

    Applicant: SONY CORP

    Abstract: PURPOSE:To enable the carrier concentration to be precisely of the title compound semiconductor. of the title compound semiconductor. CONSTITUTION:After finishing the vapor growing step of an undoped compound semiconductor layer 1, an impurity doped layer 2 doped with the impurity at the level wherein the surface density of a carrier is almost saturated is formed on the layer 1 and then the whole body is heat-treated to form a compound semiconductor layer 4.

    FIELD EFFECT TRANSISTOR OF HIGH ELECTRON MOBILITY

    公开(公告)号:JPH04298051A

    公开(公告)日:1992-10-21

    申请号:JP6346491

    申请日:1991-03-27

    Applicant: SONY CORP

    Abstract: PURPOSE:To reduce gate leakage current in this device which isolates circuit elements by a mesa type construction. CONSTITUTION:A substrate 1 is overlaid with a layer 11 having a band gap larger than that of at last a channel layer under the coat zone with the extension of a gate electrode 7 on the side face (6a) of an insular operating region 6 consisting of a lamination of a channel forming layer 3 and a carrier (electron) supply layer 5 of larger band gap.

    VAPOR GROWTH METHOD FOR GROUP III-V COMPOUND SEMICONDUCTOR

    公开(公告)号:JPH03244119A

    公开(公告)日:1991-10-30

    申请号:JP4206390

    申请日:1990-02-22

    Applicant: SONY CORP

    Abstract: PURPOSE:To uniformize characteristics with uniform film thickness of a group III-V compound by enlarging the flow ratio of a group III material carrier gas and by displacing a position of mixture of III and V group material carrier gases from the substrate end to the upstream side of gas flow. CONSTITUTION:A group III material carrier gas is introduced from the first supply port 1, and a group V material carrier gas from the second supply port 2. In this case their introduction into the same reaction furnace 10 equalizes pressures on the Bernoulli theorem so that the group V material carrier gas is led into the supply port 1 on the side of group III material carrier gas in the vicinity of outlet of the supply port 2. It follows that a position of mixture of a group III material carrier gas and a group V material carrier gas is displaced from a vapor growth substrate 3 to the side of supply port 1: this provides an effect equal to that of displacement of the vapor growth substrate 3 from region A to B side. This process enables preparation of uniform film thickness of a group III-V compound to uniformize characteristics, thereby realizing a semiconductor device to a purposed design.

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