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    Chemical sensor, biomolecule detection device, and biomolecule detection method
    52.
    发明专利
    Chemical sensor, biomolecule detection device, and biomolecule detection method 审中-公开
    化学传感器，生物分子检测装置和生物分子检测方法

    公开(公告)号：JP2013092393A

    公开(公告)日：2013-05-16

    申请号：JP2011233003

    申请日：2011-10-24

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： OZAWA KEN ,  MATSUZAWA NOBUYUKI ,  MAEDA KENSAKU ,  MORIYA YUSUKE

    IPC: G01N33/53 ,  C12M1/34 ,  C12Q1/68 ,  G01N21/64 ,  G01N33/543

    CPC classification number: G01N33/52 ,  C12Q1/6825 ,  G01N21/6428 ,  G01N21/6454 ,  G01N33/54373 ,  G01N2021/6439 ,  G01N2458/00 ,  C12Q2563/107

    Abstract: PROBLEM TO BE SOLVED: To provide a chemical sensor, a biomolecule detection device, and a biomolecule detection method that enable biomolecules to be detected with high precision.SOLUTION: A chemical sensor of the present invention comprises a substrate, an optical layer, and an intermediate layer. The substrate has a plurality of photodiodes formed thereon and arranged in a flat shape. The optical layer is laminated on the substrate, and waveguides for guiding incident light to each of the photodiodes are formed in the optical layer. The intermediate layer is laminated on the optical layer, and a probe retaining region capable of retaining a probe material is formed for each waveguide in the intermediate layer.

    Abstract translation: 要解决的问题：提供能够以高精度检测生物分子的化学传感器，生物分子检测装置和生物分子检测方法。 解决方案：本发明的化学传感器包括基板，光学层和中间层。 基板具有形成在其上的多个光电二极管并且被布置成平坦的形状。 光学层层叠在基板上，并且在光学层中形成用于引导入射到每个光电二极管的波导的波导。 中间层被层叠在光学层上，并且在中间层中为每个波导形成能够保持探针材料的探针保持区域。 版权所有（C）2013，JPO＆INPIT

    Antireflection coating and exposure method
    54.
    发明专利
    Antireflection coating and exposure method 有权
    抗反射涂层和曝光方法

    公开(公告)号：JP2007103899A

    公开(公告)日：2007-04-19

    申请号：JP2006092240

    申请日：2006-02-15

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MATSUZAWA NOBUYUKI ,  WATANABE YOKO ,  BOONTARIKA THUNNAKART ,  OZAWA KEN

    IPC: H01L21/027

    CPC classification number: H01L21/0276 ,  G03F7/091 ,  G03F7/2041 ,  Y10S438/952

    Abstract: PROBLEM TO BE SOLVED: To provide an antireflection coating using an immersion lithography technology, capable of sufficiently reducing reflectivity at the interface between a resist layer and a silicon semiconductor substrate even if exposure light diagonally enters one layer. SOLUTION: A 2-layer structure antireflection coating is formed between a resist layer and a silicon oxide film formed on the surface of a silicon semiconductor substrate, and is used for exposing the resist layer by an exposure system whose numerical aperture is 0.93-1.2, with a wavelength of 190-195 nm. N 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy an equation ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1, when a specified set is selected as sets of value [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], with a complex index of the refraction N 1 , N 2 of an upper layer and a lower layer, constituting the antireflection coating, as N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i and film thickness of the upper layer and lower layer as d 1 , d 2 . COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供使用浸没式光刻技术的抗反射涂层，即使曝光光线对角地进入一层，也能够充分降低抗蚀剂层和硅半导体基板之间的界面处的反射率。 解决方案：在抗蚀剂层和形成在硅半导体衬底的表面上的氧化硅膜之间形成2层结构抗反射涂层，并且用于通过数值孔径为0.93的曝光系统曝光抗蚀剂层 -1.2，波长为190-195nm。 n 1 ，k 1 ，d 1 ，n 2 ，k 2 d 2 满足公式ä（n 1 -n 10 ）/（n 1m 10 ）} 2 + A（K 1 -k 10 ）/（K 1M - ķ 10 ）} 2 + A（D 1 -d 10 ）/（D 1M < / SB> -d 10 ）} 2 + A（N 2 -n 20 ）/（N < SB>2米 -n 20 ）} 2 + A（K 2 -k 20 ） /（K 2米 -k 20 ）} 2 + A（D 2 -d 20 < / SB>）/（d 2m -d 20 ≤1，当指定的集合被选择为值[n 10 ， 10 ，d 10 ， 20 ， 具有构成防反射涂层的上层和下层的折射率N 1 ，N 2 的复合指数的 20 作为N 1 = n 1 i，N 2 = n 2 1 ，d 2 。 版权所有（C）2007，JPO＆INPIT

    RESIST MATERIAL AND EXPOSURE METHOD
    56.
    发明专利
    RESIST MATERIAL AND EXPOSURE METHOD 审中-公开

    公开(公告)号：JP2003186194A

    公开(公告)日：2003-07-03

    申请号：JP2001388417

    申请日：2001-12-20

    Applicant: SONY CORP

    Inventor： MATSUZAWA NOBUYUKI

    IPC: G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To enable an ultra-microfabrication exceeding the conventional techniques and using a resist material having low absorption in the wavelength region of extreme-ultraviolet radiation (EUV) while ensuring etching resistance by using a specified polymeric material. SOLUTION: In an exposure method in which a resist layer is selectively exposed with X-rays and patterned in a prescribed shape, the resist layer comprises a polymeric material having an oxygen atom content (by number) ratio nO of COPYRIGHT: (C)2003,JPO

    SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURE FOR SEMICONDUCTOR DEVICE
    57.
    发明专利
    SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURE FOR SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JP2000294523A

    公开(公告)日：2000-10-20

    申请号：JP9497399

    申请日：1999-04-01

    Applicant: SONY CORP

    Inventor： MAMINE TAKAYOSHI ,  MATSUZAWA NOBUYUKI ,  KISHII NORIYUKI

    IPC: H01L21/302 ,  G03F7/20 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To sufficiently form precise patterns by an ablation by a method wherein lights irradiated on a wafer surface collide with electrons in electron beams and photons of lights of a longer wavelength, and electronic energy is caused by inverse Compton scattering lights given to the above photons. SOLUTION: In semiconductor manufacturing apparatus, a material of an exposure part is removed by utilizing a gassing reaction (ablation) of a material by optical irradiation to form patterns on a processing face. Here, as a light source, electron beams collide with laser beams, and shortwave long lights generated due to inverse Compton scattering effects are used. From the light sources of the shortwave long lights, lights are incident on reflecting means composed of at least a pair of concave mirrors, and electron beams 4 are incident on, preferably, laser beams 3 which are focused and reciprocally reflected by the reflecting means. The electron beams 4 are incident thereon, whereby lights 3 collide with the electron beams 4 at high density in a scattering region 5, thereby obtaining scattering lights 6 (for example, X rays).

    Magnetic disk device
    58.
    发明专利
    Magnetic disk device 审中-公开
    磁盘设备

    公开(公告)号：JP2000076643A

    公开(公告)日：2000-03-14

    申请号：JP24641198

    申请日：1998-08-31

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： IWAMOTO HIROSHI ,  KISHII NORIYUKI ,  KAMEI TAKAHIRO ,  MATSUZAWA NOBUYUKI ,  KURIHARA KENICHI ,  KOBAYASHI TAKESHI

    IPC: C10M105/70 ,  C10N40/18 ,  G11B5/60 ,  G11B5/72 ,  G11B5/725

    Abstract: PROBLEM TO BE SOLVED: To provide a magnetic disk device capable of surely suppressing the occurrence of a seizing material.
    SOLUTION: In this magnetic disk device of a low floating amount making a magnetic hard disk medium a recording medium, a magnetic hard disk 5 holding a seizing inhibitor incorporating a compound having a pyridine skeleton and having two seats or more of coordination seats on its surface is used. The compound having the pyridine skeleton and two seats or more of the coordination seats is excellent in complex forming ability with a metallic atom, and a metal oxide generated on the head surface becomes a complex salt and is easily left from the head surface to hardly remain on the head surface.
    COPYRIGHT: (C)2000,JPO

    Abstract translation: 要解决的问题：提供一种能够可靠地抑制卡住材料的发生的磁盘装置。 解决方案：在该磁盘装置中，使磁性硬盘介质成为记录介质的低浮动磁盘装置;磁性硬盘5，其保持结合了具有吡啶骨架的化合物并具有两个或多个配位座位的化合物的表面 用来。 具有吡啶骨架的化合物和两个或更多个配位座的化合物与金属原子的络合物形成能力优异，头表面上产生的金属氧化物变成复盐，容易从头表面留下，难以保留 在头部表面。

    Magnetic recording reproducing device
    59.
    发明专利
    Magnetic recording reproducing device 审中-公开
    磁记录重现装置

    公开(公告)号：JP2000076640A

    公开(公告)日：2000-03-14

    申请号：JP24641498

    申请日：1998-08-31

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： KAMEI TAKAHIRO ,  KISHII NORIYUKI ,  KOBAYASHI TAKESHI ,  KURIHARA KENICHI ,  MATSUZAWA NOBUYUKI ,  IWAMOTO HIROSHI ,  MORITA HIROSHI

    IPC: C07D213/60 ,  G11B5/41 ,  G11B5/708 ,  G11B5/72

    Abstract: PROBLEM TO BE SOLVED: To provide a magnetic recording and reproducing device which surely suppresses the occurrence of seizing material without causing any deterioration of characteristics due to wear.
    SOLUTION: In this fixed head type magnetic recording and reproducing device equipped with a magnetoresistance effect reproducing head or an induction thin film magnetic head, a magnetic recording medium or a cleaning tape holding a seizing inhibitor is travelled. The seizing inhibitor contains a compound having a pyridine skeleton and two or more coordination positions. The compound having the pyridine skeleton and two or more coordination positions has excellent complex-forming ability with metal atoms so that metal oxides produced on the surface of the head 2 are changed into complex salts, which easily drop off from the surface of the head 2 and do not remain on the head surface.
    COPYRIGHT: (C)2000,JPO

    Abstract translation: 要解决的问题：提供一种磁性记录和再现装置，其可靠地抑制卡住材料的发生，而不会由于磨损而导致特性的劣化。 解决方案：在具有磁阻效应再现头或感应薄膜磁头的固定磁头型磁记录和再现装置中，移动了磁记录介质或保持着色抑制剂的清洁带。 卡滞抑制剂含有具有吡啶骨架和两个或更多个配位位置的化合物。 具有吡啶骨架和两个或更多个配位位置的化合物与金属原子具有优异的络合物形成能力，使得在头部2的表面上产生的金属氧化物变为复合盐，其容易从头部2的表面脱落 并且不要留在头部表面上。

    ORGANIC MATERIAL FOR SEMICONDUCTOR INTERLAYER INSULATION FILM
    60.
    发明专利
    ORGANIC MATERIAL FOR SEMICONDUCTOR INTERLAYER INSULATION FILM 失效

    公开(公告)号：JP2000031137A

    公开(公告)日：2000-01-28

    申请号：JP20152598

    申请日：1998-07-16

    Applicant: SONY CORP

    Inventor： MATSUZAWA NOBUYUKI

    IPC: C09D5/00 ,  C09D7/12 ,  H01L21/312

    Abstract: PROBLEM TO BE SOLVED: To produce an organic material for semiconductor interlayer insulation film, and a semiconductor interlayer insulation film, in which dielectric constant is lowered to a desired level by employing an organic material foamed by adding a foaming agent for forming the semiconductor interlayer insulation film. SOLUTION: The organic material for forming a semiconductor interlayer insulation film is produced by adding a foaming agent and forming the organic material. The foaming agent is an azobis compound represented by a formula (X)3CN=NC(Y)3. In the formula, X and Y represents, independently, any one kind selected from a group of hydrogen atom, alkyl group, alkenyl group, cyano group phenyl group, amino group, nitro group, sulfuryl group, halogen and derivatives thereof. Three X and Y groups are not required to be same group. Two or three X and Y groups may be bonded at the ends into cyclic or polycyclic structure. According to the structure, dielectric constant of organic material film can be lowered furthermore.

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